Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Positive-acting photosensitive composition and hardened material thereof

A photosensitive composition, positive-type technology, applied in the processing of photosensitive materials, silicon organic compounds, compounds of elements of Group 4/14 of the periodic table, etc., can solve the problem of easy peeling, too much, and narrow development latitude and other problems, to achieve the effect of excellent chemical resistance

Inactive Publication Date: 2013-10-30
ADEKA CORP
View PDF13 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although conventionally known photoresists using a silicone resin introduced with a phenolic hydroxyl group and a cyclic siloxane structure as a main ingredient are excellent in heat resistance and chemical resistance after a high-temperature heat history, the photoresist at the time of development is The reduction in film thickness (Japanese original: 型量り) is large, and it is difficult to form fine patterns. At the same time, since the development latitude (development time is the best time range) in the development process is narrow, even if the development time is too much One point, the developer will also penetrate into the gap between the pattern and the substrate and easily peel off, so the development time must be strictly controlled, and there are problems in the yield of the product

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Positive-acting photosensitive composition and hardened material thereof
  • Positive-acting photosensitive composition and hardened material thereof
  • Positive-acting photosensitive composition and hardened material thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0201] Hereinafter, examples are given to further illustrate the present invention, but the present invention is not limited by them.

[0202] In addition, the content of the silanol group was determined as follows: the sample was reacted with trimethylchlorosilane in a pyridine solution to change the silanol group to a trimethylsilyl ether group, and then tetramethylhydrogen Ammonium oxide ((CH 3 ) 4 NOH) The aqueous solution is treated to hydrolyze the C—O—Si bond, and the mass increase rate after the reaction is calculated backward to obtain the silanol group content.

manufacture example 1

[0203] Production Example 1: Intermediate a1

[0204] In a glass reaction vessel equipped with a thermometer and a stirring device, 300 g of toluene as a solvent, 240 g (1 mol) of 2,4,6,8-tetramethylcyclotetrasiloxane, and 64.1 g of tert-butyl acrylate ( 0.5 mol), 352 g (2 mol) of 4-tert-butoxystyrene, and 0.05 g of platinum-divinyl tetramethyl disiloxane complex (Karstedt catalyst) as a catalyst, while stirring at 60°C After reacting for 10 hours, the solvent was distilled off to obtain intermediate a1. Intermediate a1 is the compound (R 1 = Methyl, R 2 =R 3 = Ethylene, Pg=tert-butyl, m=0.5, n=2, p=1.5, m:n:p=1:4:3).

manufacture example 2

[0205] Production Example 2: Intermediate a2

[0206] In Production Example 1, 102 g (0.5 mol) of tert-butyl 4-vinylbenzoate was used instead of 64.1 g (0.5 mol) of tert-butyl acrylate. The same operation as in Production Example 1 was performed except that the intermediate 体a2. Intermediate a2 is the compound (R 1 = Methyl, R 2 =2-phenylethane-1,4'-diyl, R 3 = Ethylene, Pg=tert-butyl, m=0.5, n=2, p=1.5, m:n:p=1:4:3).

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

A positive-acting photosensitive composition containing: (A) a silanol-group-containing polysiloxane compound having a structure obtained by subjecting a compound represented by formula (1) and a compound represented by formula (2) to hydrolysis and a condensation reaction; (B) a compound having at least two epoxy-containing organic groups; (C) a diazonaphthoquinone; and (D) an organic solvent. R1 represents a C1-4 alkyl group or the like, R2 represents a C2-10 divalent hydrocarbon group, R3 represents a C2-10 divalent saturated aliphatic hydrocarbon group, and X represents a group (see description for details) represented by general formulas (3-5). Furthermore, m, n and p represent numbers in a manner such that the following are satisfied: m:n:p=1:2.1-12:1-6, and m+n+p=3-6. R4 represents a C1-4 alkyl group or the like, R5 represents a C1-4 alkyl group, and a represents 1-2.

Description

Technical field [0001] The present invention relates to a positive photosensitive composition using a polysiloxane compound, and further relates to a cured product using the positive photosensitive composition and the production of a permanent resist using the positive photosensitive composition method. Background technique [0002] With the development of the information society and the popularization of multimedia systems, the importance of liquid crystal display devices, organic EL (organic electroluminescence) display devices, etc. is increasing. In these display devices, an active matrix substrate having switching elements such as thin film transistors (TFT) for each pixel is used. Many scanning wirings and signal wirings crossing these scanning wirings with insulating films are formed on the active matrix substrate. The scanning wiring, signal wiring, insulating film, etc. of the active matrix substrate are formed by repeated patterning by photolithography on a conductive...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/023C07F7/18C07F7/21C08G77/16C08G77/38C08G77/50G03F7/075G03F7/40H01L21/027
CPCC08G77/045C08G77/80C08G77/38C09D183/04C08G77/12C07F7/21G03F7/0226G03F7/0233G03F7/0757G03F7/40
Inventor 竹之内宏美尾见仁一
Owner ADEKA CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com