Method for simulating three-dimensional light intensity distribution in thick resist ultraviolet (UV) shifting mask lithography

Abstract

The invention provides a method for simulating three-dimensional light intensity distribution in thick resist ultraviolet (UV) shifting mask lithography. The method comprises the following steps of pushing forward a three-dimensional light intensity calculation model suitable for a diazonaphthoquinone (DNQ) resist UV shifting mask lithography process by utilizing the paraxial approximation technology of incident UV to treat a Fresnel-Kirchhoff diffraction integral equation based on the optical scalar diffraction theory and shifting the upper and lower limits of the Fresnel integral horizontally; comprehensively considering the reflection and refraction effects on an air / DNQ resist interface and the reflection effect on an DNQ resist / substrate interface in the UV propagation process as well as the UV absorption factors of DNQ resist to highly accurately simulate three-dimensional light intensity distribution in the DNQ resist UV shifting mask lithography process; in the three-dimensional light intensity calculation model of UV in photoresist, embedding the position function of shifting of a mask plate with time into the light intensity distribution function to obtain light intensity distribution changing with time and exposure doses in different positions of photoresist in the whole exposure process. The problem that three-dimensional light intensity distribution in the DNQ resist UV shifting mask lithography process can not be simulated by the traditional light intensity distribution simulation methods based on the scalar diffraction theory is solved.

Description

technical field [0001] The invention provides a three-dimensional light intensity distribution simulation method for thick glue (DNQ glue) ultraviolet light moving mask photolithography technology, belonging to the field of computer simulation of micro-electromechanical system (MEMS) processing technology. Background technique [0002] During the exposure process of DNQ glue ultraviolet light moving mask lithography, the exposure of photoresist in different regions is controlled by moving the mask, so that the morphology of the sidewall of the photoresist after final development can be controlled more flexibly. Therefore, DNQ adhesive UV light moving mask lithography can more easily realize complex 3D structures that are difficult to achieve by traditional lithography, especially in MEMS processing and other aspects. [0003] During the DNQ gel moving mask lithography process, the time-varying light intensity distribution in the DNQ gel has a decisive impact on the final mor...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a three-dimensional light intensity distribution simulation method for thick glue (DNQ glue) ultraviolet light moving mask lithography process, to solve the three-dimensional light intensity distribution of DNQ glue ultraviolet light moving mask lithography process that cannot be simulated at present. The problem of strong distribution

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