An ultraviolet positive photoresist

A positive photoresist, ultraviolet technology, applied in optics, optomechanical equipment, instruments, etc., can solve the problem of not meeting the needs of production, and achieve the effect of good size reduction, high photosensitivity, and high resolution

Active Publication Date: 2018-12-21
XILONG SCI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] With the vigorous development of the electronic semiconductor industry, higher-density integrated circuits and larger-capacity memories have become a development trend, which requires photolithographic imaging technology to describe finer images. The existing UV positive photoresist There are still some deficiencies in exposure, resolution and size reducibility, which cannot meet the needs of production

Method used

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  • An ultraviolet positive photoresist
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  • An ultraviolet positive photoresist

Examples

Experimental program
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Effect test

Embodiment 1

[0022] Calculated by mass percentage, take 1.5% of diazonaphthoquinone sulfonate photosensitizer with special structure prepared by the above method, 4% of tert-butyl-phenolic resin, 10% of p-methyl-phenolic resin, benzophenone 0.5%, 0.2% carboxylated nitrile rubber, 0.5% hexamethyldisilazane, 0.5% BYK-300 leveling agent and the balance ethyl acetate were mixed evenly to obtain the UV positive photoresist G1 of the present invention.

Embodiment 2

[0024] Calculated by mass percentage, take 2% of diazonaphthoquinone sulfonate photosensitizer with special structure prepared by the above method, 8% of tert-butyl-phenolic resin, 15% of o-methyl-phenolic resin, 4-hydroxy di 0.3% of benzophenone, 0.3% of polyethersulfone, 0.6% of vinyltriethoxysilane, 0.8% of BYK-325 leveling agent and the balance of cyclohexanone are uniformly mixed to obtain the ultraviolet positive photoresist G2 of the present invention .

Embodiment 3

[0026] Calculated by mass percentage, take 3.5% of diazonaphthoquinone sulfonate photosensitizer with special structure prepared by the above method, 20% of m-methyl-phenolic resin, 20% of o-methyl-phenolic resin, benzoin dimethyl ether 0.35%, 0.5% of polyphenylene ether ketone, 0.8% of γ-aminopropyltriethoxysilane, 0.8% of BYK-330 leveling agent and the balance of dimethylacetamide are mixed evenly to obtain the ultraviolet positive light of the present invention Resist G3.

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PUM

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Abstract

The invention provides an ultraviolet positive photoresist suitable for exposure under a UV light source. The photoresist is composed of, by mass percent, 1 to 10% of diazonaphthoquinone sulfonate photosensitizer with special structure, 10 to 50% of linear phenolic resin, 0.2 to 1% of sensitizer, 0.1 to 1% of toughening agent, 0.4 to 1% of adhesion promoter, 0.2 to 1% of leveling agent and the balance of solvent; wherein the diazonaphthoquinone sulfonate photosensitizer with special structure is obtained by subjecting 1, 1- P-hydroxyphenyl-[1-Biphenyl group-4-Isopropyl group-(1-o-methyl-4-phenol)] propane and 2-Diazo-1-Naphthoquinone-5-sulfonyl chloride to substitution reaction or esterification reaction according to the ratio of 1: 2; The linear phenol-formaldehyde resin is a mixture oflinear phenol-formaldehyde resin 1 and linear phenol-formaldehyde resin 2, and the weight ratio of linear phenol-formaldehyde resin 1 and linear phenol-formaldehyde resin 2 is 2-8: 8-2. The ultraviolet positive photoresist of the present invention has higher resolution, photosensitivity and size reducibility than the conventional diazonaphthoquinone sulfonate Phenolic resin system photoresist.

Description

technical field [0001] The invention relates to a photoresist, in particular to a positive photoresist, more specifically to a UV positive photoresist suitable for exposure under a UV light source. Background technique [0002] Photoresist, also known as photoresist, is a light-sensitive mixed liquid composed of three main components: photosensitive resin, photosensitive agent and solvent; photoresist is photochemically sensitive, and it utilizes photochemical reactions to expose , development and other processes to transfer the required fine patterns from the template (mask) to the substrate to be processed, and then perform etching, diffusion, ion implantation and other processes. According to different imaging mechanisms, photoresist can be divided into negative photoresist and positive photoresist. Positive photoresist is irradiated with light of a certain wavelength, and the photoresist in the illuminated part undergoes decomposition reaction, and the solubility increas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/039
CPCG03F7/039
Inventor 宋振杨志锋黄顺礼陆煜东郑安丽许振良林柳武
Owner XILONG SCI CO LTD
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