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Process for preparing water base developing photosensitive polyimide material

A photosensitive polyimide and water-based technology, which is applied in the field of preparation of water-based developing photosensitive polyimide materials, can solve the problems of poor heat resistance, poor glue stability, poor degree of amination, etc., and achieves high sensitivity performance, good film formation and the effect of heat resistance

Inactive Publication Date: 2005-08-03
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In the document titled "Positive-type photosensitive polyimide precursor composition" (Masao Tomikawa et el. Patent No. US6524764B1), the author used dianhydride and diamine to directly polymerize polyamic acid, and then used chemical imidization method to partially imine This is not conducive to controlling the degree of imidization, and the stability of the glue is poor
[0007] In the Chinese patent CN1227637A entitled "Positive Photoresist Composition Containing 2,4-Dinitro-1-Naphthol", phenolic resin is used, which has poor heat resistance despite high sensitivity

Method used

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  • Process for preparing water base developing photosensitive polyimide material
  • Process for preparing water base developing photosensitive polyimide material
  • Process for preparing water base developing photosensitive polyimide material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Dissolve 6.44g of refined BTDA (0.020 mole) in 25ml of N-dimethylacetamide, add 1.28g of methanol (0.040 mole) under stirring, react at room temperature for 8 hours, and then add 4.76g of refined thionyl chloride (0.040 mole) , reacted at room temperature for another 5 hours, and added 5.21 HDMMDA (0.020 mol) at a low temperature of -10° C. to obtain a polyamic acid resin solution.

[0029] The above polyamic acid resin was immersed in ethanol, filtered, soaked twice with deionized water and absolute ethanol, and dried naturally. Then the dried resin was dissolved in a mixed solvent with a volume ratio of N-methylpyrrolidone / γ-butyrolactone of 2:1, and 1.5 g of NQD-I derivative was added to form a 20% polyamic acid resin solution.

[0030] The above polyamic acid resin solution was coated on a polished silicon wafer by spin coating, dried at 80°C for 20 minutes, then exposed to ultraviolet light at 365nm (i-line) to 436nm (g-line) for 4 minutes, and oxidized in 1% hydro...

Embodiment 2

[0032] Dissolve 5.88g of refined BPDA (0.02 mole) in 36ml of dimethylacetamide, add 1.84g of ethanol (0.04 mole) under stirring, react at room temperature for 10 hours, then add refined thionyl chloride 4.76g (0.040 mole), React at room temperature for another 6 hr, then add 2.44 g of HOTOL (0.01 mol) and 2.00 g of ODA (0.01 mol) at a low temperature of -15° C., and react for 5 hr to obtain a polyamic acid resin solution.

[0033] The above-mentioned polyamic acid resin was immersed in ethanol, filtered, soaked with deionized water and absolute ethanol for 3 times, and dried naturally. Then the dried resin is dissolved in a mixed solvent with a volume ratio of N-methylpyrrolidone / ethylene glycol monobutyl ether of 2:1, and 1.8 g of NQD-II derivatives are added to form a 20% polyamic acid resin solution

[0034] The above polyamic acid resin solution was coated on a polished silicon wafer by spin coating, dried at 80° C. for 20 minutes, and then exposed to ultraviolet light of ...

Embodiment 3

[0036]Dissolve refined 3.6g PMDA (0.020 mole) in 70ml N-methylpyrrolidone, add 2.40g propanol (0.040 mole) under stirring, react at room temperature for 8 hours, then add refined thionyl chloride 4.76g (0.040 mole) , react at room temperature for another 6 hr, then add 2.44 g of HOTOL (0.01 mol) and 2.00 g of ODA (0.01 mol) at a low temperature of -20° C., and react for 5 hr to obtain a polyamic acid resin solution.

[0037] The above-mentioned polyamic acid resin was immersed in ethanol, filtered, soaked with deionized water and absolute ethanol for 3 times, and dried naturally. Then the dried resin is dissolved in a mixed solvent with a volume ratio of N-methylpyrrolidone / ethylene glycol monobutyl ether of 2:1, and 1.4 g of NQD-III derivatives are added to form a 20% polyamic acid resin solution

[0038] The above polyamic acid resin solution was coated on a polished silicon wafer by spin coating, dried at 80° C. for 20 minutes, and then exposed to ultraviolet light of 365 n...

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Abstract

The present invention belongs to the preparation process of water base developing photosensitive polyimide material. Aromatic dialphanyl diacyl chloride, 3,5-diamino benzoic acid, 4, 4'-diamino-3, 3'-dihydroxy diphenyl methane and 4, 4'-diamino-3, 3'-dihydroxy diphenyl sulfone are polymerized to produce polyamate as one kind of imide prepolymer. The prepolymer has characteristic viscosity of 0.35-0.50, and when 2-diazo naphthoquinone derivative as photosensitizer is added, the prepolymer becomes excellent photosensitive material with high photosensitive performance, good filming performance and high heat resistance.

Description

technical field [0001] The invention belongs to a preparation method of a water-based developing photosensitive polyimide material. Background technique [0002] Polyimide has established its position in the electronic field by taking the opportunity of being a buffer coating (Buffer Coat) film material for LSI. In addition to the function of shielding d-rays, the buffer coating film also protects the LSI chip from heat and mechanical shock in the packaging process of resin potting and lead frame installation. After the LSI chip is made into a single piece, it is mounted on the lead frame with an adhesive, and it must withstand the conditions of 300 ° C and 30 MPa. The adhesive used here is mostly polyimide. The encapsulation resin is generally injection molded, and the processing conditions at this time are 180°C, 300MPa. This requires the buffer coating to be able to withstand such thermal and mechanical shocks, and so far there has been no report using resins other tha...

Claims

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Application Information

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IPC IPC(8): C08G73/10G03F7/004
Inventor 张春华杨正华王彤朱丹阳吴作林
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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