Lithography method

A lithography and patterning technology, applied in optics, optomechanical equipment, instruments, etc., can solve the problems of resist pattern collapse, reduction, and low production volume

Inactive Publication Date: 2010-03-24
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to many factors, it is difficult to maintain the desired critical dimension (CD)
For example, pattern collapse and critical dimension reduction may occur during photolithographic patterning because the resist layer material

Method used

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Embodiment Construction

[0016] The present invention discloses a dual patterning method, which uses water-soluble polymer materials or water-soluble crosslinkable materials to replace traditional alcohol-based materials to produce resist patterns with overall enhanced etching resistance, which can be used to form submicron Fine-grained graphics required for semiconductor devices. according to Figure 1-Figure 8 A photolithography patterning method is shown, illustrating an embodiment of the device 2 at each stage of the process.

[0017] figure 1 A semiconductor device 2 having a silicon substrate 10 is shown. The substrate 10 may also be made of other suitable semiconductor materials, such as Ge, SiGe, or GaAs. Furthermore, the substrate 10 may be composed of other suitable elemental semiconductors, such as diamond; or be composed of a suitable compound semiconductor, such as silicon carbide, indium arsenide, or indium phosphide; or be composed of a suitable alloy semiconductor, such as silicon carbid...

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Abstract

The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at leastone opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layersas a mask. The method creats a resist pattern with an overall enhanced etch resistance that can be used to create fine granularity features needed for sub-micron semiconductor devices. The use of these materials results in a patterned resist layer less prone to top loss, round corners, and resist pattern degradation.

Description

Technical field [0001] The present invention relates to a photolithography method of semiconductor technology, in particular to a photolithography method of double patterning. Background technique [0002] Semiconductor technology continues to develop to smaller pattern sizes, 65 nanometers, 45 nanometers or less. The patterned photoresist layer used to manufacture such a small pattern size usually has a high aspect ratio. Due to many factors, it is difficult to maintain the desired critical dimension (CD). For example, because the resist layer material is easily affected by the etching process, pattern collapse and critical dimension reduction may occur in the photolithography patterning process. When double patterning technology is used, new problems may arise, such as rounded corners, resist pattern collapse, etching resistance, poor shape, wrong exposure focus, high process cost, and low throughput. Summary of the invention [0003] In order to solve the above-mentioned pro...

Claims

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Application Information

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IPC IPC(8): G03F7/16H01L21/027H01L21/308
CPCH01L21/3086G03F7/405G03F7/0035H01L21/0273G03F7/16G03F7/168G03F7/2022
Inventor 叶孝蔚张庆裕陈建宏林致安
Owner TAIWAN SEMICON MFG CO LTD
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