Chemical amplified high-resolution silicon-containing I-ray ultraviolet photoresist and forming resin thereof

Abstract

The invention discloses a silicon-containing copolymer forming resin which is prepared by carrying out copolymerization reaction on a comonomer in a solvent in the presence of radical initiator, and is characterized in that the molecular weight of the forming resin is 4000-100000; the molecular weight distribution is 1.4-2.8; and the comonomer mainly comprises the following components by weight percent: 40-90% of substituted phenylethylene, 0.5-20% of silicon-containing acrylic ester coupling agent and 5-60% of acidsensitivity-containing basic group monomer. In the invention, the silicon-containing acrylic ester coupling agent which can be copolymerized with the forming resin is introduced in a forming resin formula by taking poly (p-hydroxystyrene) as a base to carry out copolymerization, so as to prepare into the new forming resin. Under the action of the silicon-containing acrylic ester coupling agent unit, the new forming resin increases the adhesive property between the photoresist and a silicon wafer, and simultaneously improves the anti-corrosion performance.

Description

technical field [0001] The invention relates to an ultraviolet photoresist, in particular to a silicon-containing copolymer film-forming resin and a chemically amplified positive photoresist prepared by using the film-forming resin for using I-line (365nm) ultraviolet light as an exposure light source. UV photoresist composition. Background technique [0002] Photoresist is a key functional material for photolithography process in large scale integrated circuit industry. Among them, the film-forming resin is an important part of the photoresist, and its chemical and physical properties directly affect the use effect of the photoresist in the large-scale integrated circuit industry. [0003] The traditional ultraviolet (UV) exposure light source is a high-pressure mercury lamp, and its light wavelength is between 600 and 300nm. Its main spectrum includes g-line (436nm), h-line (405nm) and I-line (365nm). In the photolithography process, the resolution is inversely proportio...

AI Technical Summary

Problems solved by technology

In order to improve the resolution of UV photoresist, people have made a lot of improvements to phenolic resin resin and photosensitizer, and its resolution can reach the range of 0.8-0.5 μm, but the existing technology can no longer break through the resolution of photoresist. Rate

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