Method for reducing photoresist figure linewidth roughness

A line width roughness, photoresist technology

Inactive Publication Date: 2015-02-11
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Although various methods have been studied in the prior art to reduce the line width roughness of the photoresist pattern, there is currently no effective way to reduce the low frequency line width roughness of the photoresist pattern

Method used

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  • Method for reducing photoresist figure linewidth roughness
  • Method for reducing photoresist figure linewidth roughness

Examples

Experimental program
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no. 1 example

[0037] The method for reducing the line width roughness of the photoresist pattern provided by the present invention includes: as figure 1 As shown, the substrate 10 with a photoresist pattern (not shown) on the surface is placed in a vacuum chamber (not shown); the photoresist pattern is ion-implanted with a ribbon ion beam 20 to reduce the photoresist pattern. Low-frequency linewidth roughness for glue patterns.

[0038] The so-called ribbon ion beam 20 refers to: the cross section of the ion beam 20 (the cross section perpendicular to the Z-axis direction) is rectangular, and the size of the ion beam 20 in the X-axis direction is much larger than the size in the Y-axis direction, Alternatively, the size of the ion beam 20 is much smaller in the direction of the X-axis than the Y-axis, wherein the Z-axis is perpendicular to the substrate 10, both the X-axis and the Y-axis are perpendicular to the Z-axis, and the X-axis is perpendicular to the Y-axis. In other words, the rib...

no. 2 example

[0057] The difference between the second embodiment and the first embodiment is that: in the first plasma processing step of the second embodiment, the first radio frequency power supply for forming the first plasma is turned on intermittently; While in the first plasma processing step of the first embodiment, the first radio frequency power source for forming the first plasma is continuously turned on.

[0058] Research has found that the second embodiment can bring the following further beneficial effects on the basis of the first embodiment: as mentioned above, when the substrate is exposed to the first plasma environment, the surface of the photoresist pattern will form A graphite-like layer, and when the thickness of the graphite-like layer is larger, the line width roughness of the photoresist pattern will be increased, when the first radio frequency power supply for forming the first plasma is turned on intermittently , the thickness of the graphitic layer can be reduce...

no. 3 example

[0064] The difference between the third embodiment and the first embodiment is that in the third embodiment, in addition to the first plasma treatment after the ion implantation, it also includes: exposing the substrate to 2 In the second plasma environment formed by the gas, the photoresist pattern is subjected to the second plasma treatment. In this embodiment, the first plasma treatment can be performed first, then the second plasma treatment, and then chemical vapor deposition, or the second plasma treatment can be performed first, then the first plasma treatment, and then chemical vapor deposition. vapor deposition.

[0065] Research has found that the third embodiment can bring the following further beneficial effects on the basis of the first embodiment: the C-O bond in the photoresist pattern is closely related to the high-frequency line width roughness of the photoresist pattern, when the light When there are fewer C-O bonds in the resist pattern, the high-frequency ...

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Abstract

A provided method for reducing photoresist figure linewidth roughness comprises putting a substrate with a photoresist figure on the surface in a vacuum chamber; and using a band-shaped ion beam to perform ion injection on the photoresist figure, so as to reduce the low-frequency linewidth roughness of the photoresist figure. After ion injection, the low-frequency linewidth roughness of the photoresist figure is substantially reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for reducing the line width roughness of photoresist patterns. Background technique [0002] Defects in the semiconductor manufacturing process are a major factor affecting the yield and performance of semiconductor devices. Especially for today's semiconductor manufacturing industry, when the device size is reduced to below 100nm, the requirements for the photolithography process are particularly stringent. For example, in the photolithography process, the Line Width Roughness (LWR for short) is an important indicator that is more concerned. The smaller the line width roughness of the photoresist pattern is, the more precisely the pattern can be transferred to the substrate, thus helping to improve the performance of the device. Therefore, it is of great significance to reduce the line width roughness of the photoresist pattern. [0003] Although various metho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/16H01L21/3105
Inventor 张海洋张城龙
Owner SEMICON MFG INT (SHANGHAI) CORP
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