Sulfonium sulfonate photoacid generator synthesized from abietic acid and synthesis method of sulfonium sulfonate photoacid generator

A technology of photoacid generator and synthesis method, which is applied in the field of photoresist, can solve the problems of exposure influence, poor transparency, etc., and achieve the effects of excellent etching resistance, uniform dissolution, and simple synthesis route
CN112645849AInactive Publication Date: 2021-04-13上海博栋化学科技有限公司

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
上海博栋化学科技有限公司
Publication Date
2021-04-13
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a sulfonium sulfonate photoacid generator synthesized from abietic acid, and relates to the field of photoacid generators. The sulfonium sulfonate photoacid generator has a structural formula shown in the specification, in the formula, R1 is an oxygen-containing linking group, and R2 is a fluoroalkyl group. The photoacid generator can reduce the diffusion of the photoacid generator, improve the edge roughness, reduce the line width roughness and improve the resolution; the photoacid generator is more transparent under 193 nm, and exposure under a 193 nm light source is facilitated; the etching resistance is excellent; the photoacid generator is balanced in hydrophilicity and lipophilicity, has proper adhesive force and excellent solubility, is more uniform in dissolution, and is simple in synthetic route.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the field of photoresists, in particular to a sulfonate sulfonium salt photoacid generator synthesized from abietic acid and a synthesis method thereof. Background technique

[0002] Photolithography technology refers to the process of transferring the pattern designed on the mask plate to the substrate by using the chemical sensitivity of photoresist under the action of visible light, ultraviolet light, electron beam, etc., through exposure, development, etching and other processes. Graphics microfabrication technology.

[0003] Photoresist, also known as photoresist, is the most critical functional chemical material involved in photolithography technology. The main components are resin, photoacid generator, and corresponding additives and solvents. This type of material has light (including Visible light, ultraviolet light, electron beam, etc.) are chemically sensitive, and their solubility in the developer solution changes ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More