Distributed Raman amplification-based Brillouin optical time domain analysis system

An optical time domain analysis and Raman amplification technology, applied in the field of optical fibers, can solve the problems affecting the measurement resolution and intensity drop of the back end of the optical fiber, and achieve the effect of ensuring temperature/strain resolution and improving distribution uniformity.

Inactive Publication Date: 2010-06-30
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

[0005] 1. Because the power of the Brillouin pump wave is only strong at the front end of the fiber, but at the back end of the fiber, due to the loss of the fiber and the consumption of the Brillouin probe light, the intensity drops sharply, which seriously affects the measurement resolution at the back end of the fiber;

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  • Distributed Raman amplification-based Brillouin optical time domain analysis system
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  • Distributed Raman amplification-based Brillouin optical time domain analysis system

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Embodiment Construction

[0029] The present invention will be further described below in conjunction with accompanying drawing:

[0030] Such as figure 1 Shown: the Brillouin optical time-domain analysis system of the present invention includes a laser 1, a first isolator 2, a coupler 3, a first polarization controller 4, a second polarization controller 16, a first electro-optic modulator 6, Second electro-optic modulator 17, polarization scrambler 8, first erbium-doped fiber amplifier 9, second erbium-doped fiber amplifier 18, optical circulator 12, detector 10, tunable filter 11, data acquisition and processing system 7, waveform Generator 5, microwave generator 13, Raman amplification system, wherein, the laser 1 is used to generate Brillouin pump waves and detection waves, characterized in that: the line width of the light source 1KHz, output polarization < 5%, there are two erbium-doped fiber amplifiers, the first erbium-doped fiber amplifier 9 is connected to the scrambler 8, used to amplify t...

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Abstract

The invention discloses a bidirectional distributed Raman amplification-based Brillouin optical time domain analysis system. The system comprises a laser 1, a coupler 3, a first electro-optical modulator 6, a second electro-optical modulator 17, a polarization scrambler 8, a first erbium-doped fiber amplifier 9, a second erbium-doped fiber amplifier 18, an optical circulator 12, a tunable filter 11, a detector 10, a data acquisition processing system 7 and a Raman amplification system. In the system, the bidirectional distributed Raman amplification technology is applied in the Brillouin optical time domain analysis system to improve the distribution evenness of Brillouin detection signal gain on a whole section of a sensing fiber, so that the temperature / strain resolution of the whole section of the sensing fiber can be ensured, and long distance distribution sensing in true sense can be realized.

Description

technical field [0001] The invention relates to the field of optical fiber technology, in particular to a method for improving the performance of a Brillouin optical time-domain analysis system by applying a distributed Raman amplification technology. Background technique [0002] Distributed fiber optic sensor is a new type of sensing technology that has been studied in recent years. Because it can sense the spatial distribution of strain and temperature on the transmission path and information that changes with time, distributed fiber optic sensors are used in multi-storey buildings, bridges, dams, aircraft, It has an important application prospect in the safety detection of major structures and equipment such as oil wells. [0003] Distributed sensing technology based on Brillouin scattering has higher measurement accuracy, measurement range and spatial resolution in temperature and strain measurement than other sensing technologies, so this technology has been widely con...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01D5/353G02F1/39
Inventor 饶云江贾新鸿
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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