Systems and methods for forming zirconium and/or hafnium-containing layers

Inactive Publication Date: 2005-07-28
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0009] This invention provides methods of vapor depositing a metal-containing layer on a substrate. These vapor deposition methods involve forming the layer by combining one or more zirconium and/or hafnium diorganoamide (e.g., dialkylamide) precursor compounds with one or more tetraorganooxysilane (e.g., tetraalkoxysilane) precursor compounds. Significantly, the methods of the present invention do not require the use of w

Problems solved by technology

The continuous shrinkage of microelectronic devices such as capacitors and gates over the years has led to a situation where the materials traditionally used in integrated circuit technology are approaching their performance limits.
However, when the SiO2 layer is thinned to 1 nm (i.e., a thickness of only 4 or 5 molecules), as is desired in the newest micro devices, the layer no longer effectively performs as an insulator due to the tunneling current ru

Method used

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  • Systems and methods for forming zirconium and/or hafnium-containing layers
  • Systems and methods for forming zirconium and/or hafnium-containing layers
  • Systems and methods for forming zirconium and/or hafnium-containing layers

Examples

Experimental program
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Effect test

example 1

Synthesis of Tetraisopropoxysilane, Si[OCH(CH3)2]4

[0067] A dry argon-purged flask equipped with stirrer and thermometer was charged with 100 mL of anhydrous isopropyl alcohol (having a water content of 230 ppm as determined by Karl Fischer Analysis). Then 25 mL of silicon tetrachloride (available from Sigma-Aldrich Co., Milwaukee, Wis.) was added slowly to the alcohol at ambient temperature over a 25 minute period by syringe. During the reaction the contents of the flask formed an emulsion and exothermed to 35° C.

[0068] After standing at ambient conditions for 24 hours, the contents of the flask had formed two layers. The lower layer along with some of the upper layer were transferred to a flask connected to a one-piece distillation apparatus. The isopropyl alcohol was removed from the reaction mixture by distilling at 78° C. and atmospheric pressure using an argon purge. During the distillation, by-product hydrogen chloride gas was vented from the system. Following alcohol and HC...

example 2

Atomic Layer Deposition of (Hf,Si)O2

[0069] Using an ALD process, precursor compounds hafnium dimethylamide, Hf(N(CH3)2])4 (Strem Chemicals, Newbury Port, Mass.), and tetraisopropoxysilane, Si[OCH(CH3)2]4, were alternately pulsed for 200 cycles into a deposition chamber containing a silicon substrate with a top layer composed of 1500 Angstroms of p-doped polysilicon. A 350 Å layer of (Hf,Si)O2 was deposited, containing 25 atom % Hf, 10 atom % Si and oxygen. X-ray diffraction analysis (XRD) showed the layer to be amorphous, as measured immediately after the ALD process was completed and also after a 750° C. / 1 minute anneal in oxygen.

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Abstract

A method of forming (and apparatus for forming) a zirconium and/or hafnium-containing layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more silicon precursor compounds of the formula Si(OR)4 with one or more zirconium and/or hafnium precursor compounds of the formula M(NR′R″)4, wherein R, R′, and R″ are each independently an organic group and M is zirconium or hafnium.

Description

FIELD OF THE INVENTION [0001] This invention relates to methods of forming a layer on a substrate using one or more silicon precursor compounds and one or more zirconium and / or hafnium precursor compounds during a vapor deposition process. The precursor compounds and methods are particularly suitable for the formation of a metal silicate dielectric layer, particularly a zirconium and / or hafnium silicate dielectric layer, onto a semiconductor substrate or substrate assembly. BACKGROUND OF THE INVENTION [0002] Capacitors are the basic energy storage devices in random access memory devices, such as dynamic random access memory (DRAM) devices and static random access memory (SRAM) devices. They consist of two conductors, such as parallel metal or polysilicon plates, which act as the electrodes (i.e., the storage node electrode and the cell plate capacitor electrode), insulated from each other by a dielectric material. [0003] The continuous shrinkage of microelectronic devices such as ca...

Claims

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Application Information

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IPC IPC(8): C23C16/42C23C16/40C23C16/44C23C16/455C23C16/56H01L21/314H01L21/316
CPCC23C16/401C23C16/45531C23C16/45553C23C16/56H01L21/02148H01L21/02159H01L21/31645H01L21/0228H01L21/02337H01L21/3142H01L21/31612H01L21/31641H01L21/02214H01L21/02164H01L21/02181H01L21/02189H01L21/02161H01L21/0217H01L21/02362
Inventor VAARTSTRA, BRIAN A.
Owner MICRON TECH INC
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