The invention relates to the technical field of
hybrid bonding, in particular to a
laser-assisted
hybrid bonding
interconnection method, which comprises the following steps of: S1,
processing the surface of a
wafer to enable the to-be-bonded surface of the
wafer to be flat; s2, cleaning a to-be-bonded surface of the
wafer, and removing organic pollutants and an
oxide layer; s3, aligning and fitting the surfaces to be bonded of the two wafers; s4, enabling the to-be-bonded surfaces to comprise
dielectric layers and
metal interconnection points, irradiating the
dielectric layers with
infrared laser, and carrying out the
interconnection of the
dielectric layers of the two to-be-bonded surfaces; and S5, the
metal interconnection points are heated by
blue laser, and the
metal interconnection points of the two surfaces to be bonded are interconnected. In the
hybrid bonding stage, the
infrared laser and the
blue laser are used for bonding the
dielectric layer and the metal interconnection point respectively, partitioned
irradiation and differentiated heating of the metal interconnection point and the
dielectric layer are achieved, the problems of interface warping, microcracks and other
thermal damage are effectively avoided, and the interconnection quality and the packaging reliability are improved.