A full-color Micro-LED display structure with light efficiency extraction and pixel-free interference and a manufacturing method thereof

Abstract

The invention relates to a light efficiency extraction and pixel-free full-color Micro-A LED display structure and a method for manufacture that same, includes an array of LED chips arranged on a substrate surface and arranged in an array, A microlens array arranged on the upper and lower surfaces of a transparent substrate and an inverted trapezoidal microstructure array corresponding to the microlens array, and an enclosure connecting the substrate and the transparent substrate. The inverted trapezoidal microstructure array sequentially forms an R unit for displaying red light, a G unit fordisplaying green light and a B unit for displaying blue light along the lateral direction of the LED chip. The invention utilizes a blue LED chip to excite a green quantum dot layer in a red / G unit inan R unit to be converted into red light / green light; At the same time, by using the distributed Bragg reflector in microstructure, The Micro-LED displays light efficiency, and the reflective layer and the microlens array in the microstructure can also be used to improve the light efficiency in the vertical direction and prevent the color interference of adjacent pixels, thereby realizing the light efficiency extraction and the full-color Micro- LED display.

Description

technical field [0001] The invention relates to the field of semiconductor display, in particular to a full-color Micro-LED display structure with light effect extraction and no pixel interference and a manufacturing method thereof. Background technique [0002] Micro-LED display is to miniaturize traditional LEDs to form micron-scale LED arrays to achieve ultra-high-density pixel resolution. Micro-LED displays have the characteristics of self-illumination. Compared with OLED and LCD displays, Micro-LED displays are easier to accurately adjust the color, have longer luminous life and higher brightness, and are more thin and light and power-saving. Due to its high density, small size and super multi-pixel characteristics, Micro-LED display will become the leader of the third-generation display technology featuring high fidelity, interactive and personalized display. [0003] At present, Micro-LED color display is generally epitaxially grown on a GaN substrate by metal organi...

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Problems solved by technology

Chinese patent CN106356386A fills the blue Micro-LED chip with red quantum dots and green quantum dots to achieve full-color display, but the colors between pixels are easy to disturb; in addition, the process of directly coating quantum dots on the surface of the chip is unstable, resulting in The performance of the device is poor, and the patterning of quantum dots is not suitable for control, resulting in high device manufacturing costs; a micron-scale LED display device that can realize light effect extraction and color conversion in the Chinese patent CN108257949A is to prepare inverted micron-scale blue LED chips. The trapezoidal liquid storage tank is filled with red and green quantum dots sequentially in the microstructure of the inverted trapezoidal liquid storage tank, and the R unit, G unit and B unit are sequentially formed along the lateral direction of the LED chip to realize Micro-LED full-color display. Structural arrays improve light extraction efficiency of devices

However, the microstructure of this method is directly prepared on the surface of the micron-scale LED chip, and the manufacturing process is complicated, which seriously affects the device performance and manufacturing cost; at the same time, the quantum dot light-emitting layer is easily exposed to the atmosphere. Under the action of water and oxygen in the air, the device The lifespan is severely reduced; in addition, the direction of the vertical light on the device surface cannot be controlled, and crosstalk occurs seriously

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