195results about How to "Avoid light loss" patented technology

There is provided an optical element for an illumination system for wavelengths of ≦193 nm. The illumination sytem includes a light source, a field plane, an exit pupil, and a plurality of facets. The plurality of facets receives light from the light source and guides the light to a plurality of discrete points in the field plane. The plurality of discrete points collectively illuminate a field in the field plane, and each of the plurality of facets illuminates a region of the exit pupil.

A recess portion is formed in a substrate to accommodate a light emitting element so as to be sealed with a sealant. A light guide layer formed of a thin transparent resin film is fixed onto the substrate via an adhesive layer to realize an illuminating device with a thin structure. The light emitted from the light emitting element is irradiated into the light guide layer via the sealant and the adhesive layer. The light fully reflecting on the boundary surfaces between the light guide layer and the adhesive layer, and between the light guide layer and the air layer passes inside the light guide layer. Then the light which has not fully reflected leaks outside from the surface of the transparent resin film which forms the light guide layer. This makes it possible to illuminate the surface of the illumination device 1A entirely with brightness.

The invention discloses a display panel and a display device. The display panel comprises an array layer, a luminescent device layer and a light-sensitive device, wherein the array layer is located atone side, away from a display face of the display panel, of the luminescent device layer; the luminescent device layer comprises a plurality of organic light-emitting devices, each organic light-emitting device comprises a positive pole, a luminescent layer and a negative pole, and a film where the negative pole is located is a cathode layer; the light-sensitive device comprises a plurality of induction units, the induction units are located at one side, away from the display face of the display panel, of the cathode layer; a display area of the display panel comprises a luminous zone and non-luminous zone, the cathode layer is provided with a plurality of opening holes, the opening holes are located in the non-luminous zone, and the orthographic projections of the induction units are atleast partly located in the opening holes. The display panel and the display device have the advantages that the light penetration rate of fingerprint identification detecting is improved, thereby increasing the amount of light received by the induction units, and improving the precision of the fingerprint identification detecting.

The invention provides a light source system and a piece of projection equipment. The light source system comprises at least two light sources, a wavelength conversion device, a first light guide component, and a second light guide component. The at least two light sources include an exciting light source and a first complementary light source, and the exciting light source is used for emitting exciting light. The first light guide component is used for guiding the exciting light to the wavelength conversion device and guiding excited light emitted by the wavelength conversion device to a light homogenizing device. The wavelength conversion device is used for converting the exciting light into excited light and emitting the excited light to the first light guide component. The additional light source emits first complementary light of which the optical extend is smaller than that of the excited light. The second light guide component is used for guiding the first complementary light to the light homogenizing device. The size of the second light guide component is smaller than the size of the first light guide component. According to the invention, the utilization rate of the first complementary light can be greatly improved.

A flip-chip LED fabrication method includes the steps of (a) providing a GaN epitaxial wafer, (b) forming a first groove in the GaN epitaxial layer, (c) forming a second groove in the GaN epitaxial layer to expose a part of the N-type GaN ohmic contact layer of the GaN epitaxial layer, (d) forming a translucent conducting layer on the epitaxial layer, (e) forming a P-type electrode pad and an N-type electrode pad on the translucent conducting layer, (f) forming a first isolation protection layer on the P-type electrode pad, the N-type electrode pad, the first groove and the second groove, (g) forming a metallic reflection layer on the first isolation protection layer, (h) forming a second isolation protection layer on the first isolation protection layer and the metallic reflection layer, (i) forming a third groove to expose one lateral side of the N-type electrode pad, (j) separating the processed GaN epitaxial wafer into individual GaN LED chips, and (k) bonding at least one individual GaN LED chip thus obtained to a thermal substrate with a conducting material.

This invention relates to an LED backlight apparatus. The LED backlight apparatus comprises: a housing having an upper opening; a reflective sheet provided on a bottom inside the housing; a plurality of LED light sources arranged above the reflective sheet at a predetermined distance to emit light toward the reflective sheet; and a light source support connected to a side wall of the housing to support the LED light sources. The light sources are arranged opposite to the reflective sheet so that light beams emitted from the LED light sources reflect from the reflective sheet before entering a diffuser plate behind the LED light sources from the reflective sheet, thereby potentially reducing the thickness of the backlight apparatus while ensuring a distance for the light beams to sufficiently mix together before entering the differ plate.

A scanning optical microscope using a wavefront converting element suffers minimum off-axis performance degradation and allows the wavefront converting element to be controlled by a simple method. Further, a pupil relay optical system is simple in arrangement or unnecessary. A laser scanning microscope includes a laser oscillator and a wavefront converting element for applying a desired wavefront conversion to a laserbeam emitted from the laser oscillator. An objective collects a wavefront-converted approximately parallel laser beam emerging from the wavefront converting element onto a sample. A detector detects signal light emitted from the sample. An actuator scans the objective along a direction perpendicular to the optical axis.

Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.

The invention provides a light source system and projection equipment. The light source system comprises at least two light sources, a wavelength conversion device, a first light guide component and a second light guide component; the two light sources comprise an exciting light source and a first supplement light source, the exciting light source is used for emitting exciting light, the first light guide component is used for guiding the exciting light to the wavelength conversion device and guiding the emergent excited light emitted of the wavelength conversion device to a dodging device, the wavelength conversion device is used for converting the exciting light into the excited light and emits the excited light to the first light guide component, the first supplement light source emits first supplement light, and optical extend of the first supplement light is smaller than that of the excited light; the second light guide component is used for guiding the first supplement light to the dodging device, and the second light guide component is smaller than that first light guide component. The light use ratio of the first supplement light can be increased greatly.

The invention provides a light source system and projection equipment. The light source system comprises an exciting light source, a first supplementing light source, a first light guiding assembly, awavelength conversion device and a second light guiding assembly, wherein the exciting light source is used for emitting exciting light; the first supplementing light source is used for emitting first supplementing light; the first light guiding assembly is used for guiding exciting light to the wavelength conversion device; The wavelength conversion device is used for converting exciting light into excited light and transmitting the excited light to the first light guiding assembly; the first light guiding assembly is further used for guiding excited light so that the excited light is transmitted to the second light guiding assembly; at least a part of components of the second light guiding assembly are arranged on the light path of the excited light after emitted from the first light guiding assembly; and the second light guiding assembly is used for guiding one or two of excited light and first supplementing light so that the first supplementing light and at least a part of the excited light are emitted from a same emission passage. The light utilization rate of the first supplementing light can be greatly improved.

An organic electroluminescent display device and a method of producing the same are provided. The organic electroluminescent display device includes: a substrate; and an organic electroluminescent unit formed on a surface of the substrate and including a first electrode, an organic layer and a second electrode sequentially deposited on the substrate, in which the organic electroluminescent display device includes a diffraction grating layer having low refractive gratings and high refractive gratings alternately formed parallel to the substrate, and a high refractive layer formed on the diffraction grating layer interposed between the substrate and the first electrode. According to the organic electroluminescent display device, the light coupling efficiency can be increased due to minimized voids and unevenness generated in the formation of a diffraction grating layer, optical losses due to a first electrode can be prevented due to a high refractive layer interposed between the diffraction grating layer and the first electrode to focus light distribution on the high refractive layer, and the light coupling efficiency can be maximized due to increased light distribution in the diffraction grating layer.

This invention has the polarizing function of polarizing an input beam and a non-reflecting function of suppressing reflection of the input beam, wherein at least one side of a light-transmissive substrate 1 has a polarizing portion 4 with a striped structure formed by multiple alternating light-transmissive dielectric layers 2a, 2b . . . and metallic film layers 3a, 3b . . . . Its characteristics are improved if the metallic film layers are very thin and flat, with a target thickness in the range from 5 to 20 nm and variation of film thickness within the range of ±10%.

The embodiment of the invention provides an organic electroluminescence device, and a manufacturing method and a display device of the organic electroluminescence device, and belongs to the field of organic electroluminescence devices. The organic electroluminescence device enhances the light emitting efficiency of devices, and comprises a substrate, a transition layer and a transparent ITO electrode, wherein the substrate, the transition layer and the transparent ITO electrode are sequentially arranged. The transition layer is composed of a plurality of film layers with the gradually-changed refractive indexes, the refractive indexes are gradually increased from bottom to top in the direction perpendicular to the substrate, the refractive index of the film layer, close to the transparent ITO electrode, of the transition layer is larger than or equal to the refractive index of the transparent ITO electrode, and the refractive index of the film layer, close to the substrate, of the transition layer is smaller than or equal to the refractive index of the substrate. The manufacturing method and the display device of the organic electroluminescence device can be used in manufacturing of the organic electroluminescence device.

A solar cell including a first semiconductor layer including a first impurity, a second semiconductor layer disposed on the first semiconductor layer, the second semiconductor layer including a second impurity, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the first semiconductor layer includes a plurality of impurity-doped regions including a third impurity, wherein a type of the third impurity is the same as a type of the second impurity.

A light processing structure for a digital light processing (DLP) projection device is disclosed. The DLP projection device comprises a plurality of digital micro-mirror devices (DMDs). The optical processing structure comprises a color separation mechanism, a reflecting mechanism and a color combination mechanism, wherein the color separation mechanism utilizes dichroic mirror(s) and a color wheel for splitting light beams into individual colors. The reflecting mechanism includes a plurality of TIR prisms corresponding to the DMDs, respectively. The color combination mechanism utilizes a color-combining prism assembly in which two triangular prisms are assembled with each other. The mentioned mechanism uses a shorter back focal length for the projection lens, thereby reducing the light processing structure and enhancing product quality.

Disclosed are a semiconductor device and a method of fabricating the same. The method includes forming a first GaN layer, a sacrificial layer and a second GaN layer on a GaN substrate, wherein the sacrificial layer has a bandgap narrower than those of the GaN layers; forming a groove penetrating the second GaN layer and the sacrificial layer; growing GaN-based semiconductor layers on the second GaN layer to form a semiconductor stack; forming a support substrate on the semiconductor stack; and removing the GaN substrate from the semiconductor stack by etching the sacrificial layer. Accordingly, since the sacrificial layer is etched using the groove, the support substrate can be separated from the semiconductor stack without damaging the support substrate.