VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system

a solid-state laser and semiconductor laser technology, applied in semiconductor lasers, semiconductor laser structural details, optical resonator shapes and construction, etc., can solve the problems of laser systems that require the use of expensive or inefficient pumping mechanisms, lasers are typically too low in power and beam quality to be effective in a wide range of applications, and achieve improved heat dissipation, high power output, and improved overall power output

Inactive Publication Date: 2005-02-03
PRINCETON OPTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

The inventors have developed a type of laser diode that has better cooling efficiency compared to traditional methods like air cooling. They also use multiple VCSELs instead of just one on top of another to achieve higher power outputs without requiring expensive and bulky external lens components. This results in lower costs and more efficient operation.

Problems solved by technology

The patent text discusses the need for low-cost, low-noise lasers that can be used in high-performance analog photonics systems, such as fiber optic transmission systems. The technical problem addressed is the development of such lasers, specifically the use of VCSELs as a pumping mechanism for doped-glass lasers such as the Er:Yb laser. The text also highlights the challenges of increasing the power output of VCSELs and the need for external lens systems to effectively utilize the output beams.

Method used

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  • VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
  • VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
  • VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system

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Embodiment Construction

[0018]FIG. 1 demonstrates an exemplary embodiment of VCSEL 100 according to the present invention. VCSEL 100 comprises a substrate 101 of a suitable semiconductor material, on which the other materials of the VCSEL 100 can be grown, such as GaAs, Si, InP or the like. The substrate 101 has opposed inner and outer surfaces 102 and 163, and is preferably of N-type conductivity. N-ohmic contact layer 104 is deposited onto surface 103 and defines a region 105 through which light is emitted, as described below. Region 105 is coated with an antireflecting dielectric layer (not shown). On the inner surface 102 of the substrate 101 is a first mirror stack 106. The mirror stack 106 is a distributed Bragg reflector, and is formed of alternate layers 107 and 108 of semiconductor materials having different indices of refraction. This is achieved, for example, by using materials of different compositions, such as AlGaAs, in which the amount of aluminum in the material of the layers 107 is differe...

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Abstract

A vertical cavity surface emitting laser (VCSEL) device with improved power and beam characteristics. The VCSEL device contains one VCSEL or an array of VCSELs. Each VCSEL has a corresponding integrated microlens, and a heat sink is attached to the device side of the VCSEL device. The heat sink allows improved heat dissipation, and therefore provides improved power characteristics of the VCSEL device output laser beam. The microlens or microlens array allows easier and more compact focussing of the VCSEL device output laser beam. The VCSEL device can be used in a variety of optical systems, and its improved power and focusing characteristics provide a compact, low power, low cost laser system.

Description

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Claims

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Application Information

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Owner PRINCETON OPTRONICS
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