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Method of preparing high square ratio magnetic one-dimensional nano line array

A technology of nanowire array and squareness ratio, which is applied in the field of preparation of electrochemical deposition by template method, can solve the problems of poor crystallinity of magnetic metal wires, unstable AC deposition process, and clogging of holes, so as to improve the coercive force , taking into account the effect of controllability and simple operation process

Inactive Publication Date: 2007-08-15
EAST CHINA UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The AC deposition process is not very stable, and the phenomenon of hole blocking is prone to occur; and the crystallinity of the obtained magnetic metal wire is not very good, and it is a polycrystalline structure, so annealing treatment is required

Method used

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  • Method of preparing high square ratio magnetic one-dimensional nano line array
  • Method of preparing high square ratio magnetic one-dimensional nano line array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 1. Preparation process of porous alumina template:

[0026] (1) Electrochemically polish the high-purity aluminum foil after degreasing and annealing

[0027] (2) Using 0.3M sulfuric acid solution as the dielectric, the oxidation voltage is 20V, and the anodic oxidation is 3hrs.

[0028] (3) Use a mixed solution of chromic acid and phosphoric acid to remove the formed aluminum oxide layer, wash it, and perform the second anodic oxidation under the same conditions as the first time.

[0029] (4) Gradually depressurize and thin the barrier layer: reduce the oxidation voltage by 2V each time for 30s until the voltage is reduced to 5V.

[0030] 2. Pulse Deposition Process

[0031] (1) Set the pulse voltage as shown in Figure 4. The local potential is 0V, the low potential is -10V, the ratio of high potential to low potential duration is 4:1, and the frequency is 1Hz.

[0032] (2) With porous alumina as the cathode, the metal salt solution to be plated is the electroplat...

Embodiment 2

[0036] 1. Preparation process of porous alumina template:

[0037] Concrete process is with embodiment 1.

[0038] 2. Pulse Deposition Process

[0039] (1) Set the pulse voltage as shown in Figure 4. The high potential is 0V, the low potential is -5V, the ratio of the duration of the high potential to the low potential is 4:1, and the frequency is 2Hz.

[0040] (2) Porous alumina is used as the cathode, and the metal salt solution to be plated is the electroplating solution, and the plating solution contains 200g / L cobalt sulfate and 20g / L boric acid. Graphite is the anode.

[0041] (3) The deposition time is controlled to be 20 mins to obtain a nanowire array with a length of about 3 μm.

[0042] The cobalt nanowire array obtained in Example 2 has a squareness ratio of 0.903 and a coercive force of 1547 Oe.

Embodiment 3

[0044] 1. Preparation process of porous alumina template:

[0045] Concrete process is with embodiment 1.

[0046] 3. Pulse deposition process

[0047] (1) Set the pulse voltage as shown in Figure 4. The high potential is 0V, the low potential is -8V, the ratio of the duration of the high potential to the low potential is 2:1, and the frequency is 5Hz.

[0048] (2) Porous alumina is used as the cathode, and the metal salt solution to be plated is the electroplating solution, which contains 300g / L nickel sulfate and 20g / L boric acid. Graphite is the anode.

[0049] (3) The deposition time is controlled to be 30 mins to obtain a nanowire array with a length of about 9 μm.

[0050] The cobalt nanowire array obtained in Example 3 has a squareness ratio of 0.905 and a coercive force of 802 Oe.

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Abstract

The invention discloses a preparing method of high square ratio magnetic one-dimensional nanometer line array, which comprises the following steps: adopting source voltage of impulsion; proceeding electrical plating deposition for porous aluminum oxide mold with time at 5-50 h; getting the product; setting square ratio (remanence ratio) bigger than 90% and coercitive force at 500-2000Oe. This invention possesses simple operating course, which can increase the square ratio (remanence ratio) and coercitive force and controllability of nanometer line array growth.

Description

technical field [0001] The invention relates to a preparation method of a magnetic one-dimensional nanowire array, in particular to a preparation method of template electrochemical deposition. technical background [0002] Magnetic nanowire arrays have potential applications in perpendicular recording of magnetic media, magnetic nanodevices, magneto-optical devices, and microwave devices. One-dimensional magnetic nanowire materials have a high degree of magnetic anisotropy, and the magnetization direction is generally parallel to the axis of the nanowire. When the external magnetic field is perpendicular to the magnetization of the film surface, the hysteresis loop has a higher squareness ratio, showing a higher squareness ratio than the two-dimensional nanofilm. Materials with superior magnetic properties. For example, in the field of magnetic recording, magnetic recording methods mainly include horizontal recording method and vertical recording method, and horizontal reco...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B30/02C25D5/02H01F41/26
Inventor 姜海波李春忠赵尹刘秀红胡彦杰
Owner EAST CHINA UNIV OF SCI & TECH
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