Yttrium-iron-garnet film structure and preparation method

A technology of yttrium iron garnet and thin film structure, applied in chemical instruments and methods, application of magnetic films to substrates, magnetic layers, etc., can solve problems such as the gap between magnetic properties and magneto-optical properties, and reduce surface roughness. , Coercive force reduction, surface improvement effect

Inactive Publication Date: 2008-11-26
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

There have been many literatures on the preparation of garnet on Si substrates, and the garnet films on Si substrates are not like those prepared on other substrates, such

Method used

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  • Yttrium-iron-garnet film structure and preparation method
  • Yttrium-iron-garnet film structure and preparation method
  • Yttrium-iron-garnet film structure and preparation method

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Embodiment Construction

[0030] The invention provides a yttrium-iron garnet film structure, comprising a Si substrate and a yttrium-iron garnet film layer thereon, and CeO between the Si substrate and the yttrium-iron garnet film layer 2 transition layer. CeO 2 The transition layer is plated on the Si substrate.

[0031] The present invention adopts figure 1 device shown. The preparation method of the yttrium iron garnet film structure is as follows:

[0032] Step 1. First, the surface of the substrate is pretreated, and the cleaning steps are:

[0033] (1) Ultrasonic cleaning with deionized water for 15 minutes;

[0034] (2) Repeat (1);

[0035] (3) Ultrasonic cleaning with acetone for 15 minutes;

[0036] (4) Repeat (3);

[0037] (5) Ultrasonic cleaning with wine for 15 minutes.

[0038] (6) Repeat (5); (7) Rinse and dry with a large amount of pure water.

[0039] Step 2, fixing the cleaned substrate on the tray and placing it on the sputtering table in the vacuum chamber. First start th...

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Abstract

The invention relates to an yttrium iron garnet film structure which belongs to the field of electronic material, in particularly to a method for preparing radio frequency magnetron sputtering of yttrium iron garnet film materials. The film structure consists of a Si substrate and an yttrium iron garnet film layer, wherein a CeO2 transient layer is also arranged between the Si substrate and the yttrium iron garnet film layer. The yttrium iron garnet film structure has the advantages that: surface of the film is improved greatly, surface roughness is reduced obviously, saturation magnetization and remnant magnetization of the film is improved, and coercive force is reduced.

Description

technical field [0001] The invention belongs to the field of electronic materials, and particularly relates to a radio frequency magnetron sputtering preparation method of yttrium iron garnet thin film material. Background technique [0002] Garnet thin films are considered to be a promising material in high-performance nonreciprocal waveguide devices, integrated magneto-optical devices, and microwave devices due to their excellent Faraday rotation optical effect and low transmission loss. At the same time, Si plays an important role in integrated circuits, and the research and preparation of thin films based on Si has become very popular, because it may realize the integration of Si-based microelectronic devices and optical waveguides. There have been many literatures on the preparation of garnet on Si substrates, and the garnet films on Si substrates are not like those prepared on other substrates, such as quartz, GGG, Al 2 o 3 Substrates, etc., are easily crystallized c...

Claims

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Application Information

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IPC IPC(8): C30B29/28C30B23/08H01F10/24H01F41/28
Inventor 杨青慧张怀武刘颖力文岐业李元勋贾利军唐晓莉
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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