81results about "Evaporation application" patented technology

A CPP spin-valve element formed on a substrate including a free layer structure including at least one ferromagnetic layer and a pinned layer structure including at least one ferromagnetic layer. The free layer is magnetically softer than the pinned layer. A thin non-magnetic spacer layer structure configured to separate the free layer and the pinned layer is provided in order to prevent a magnetic coupling between the free and pinned layer structures, and to allow an electric current to go there through. At least two current-confining (CC) layer structures including at least two parts having significantly different current conductivities are incorporated therein.

The heat resistance of a magnetic resistance device utilizing the TMR effect is improved. Also, the Neel effect of the magnetic resistance device utilizing the TMR effect is restrained. The magnetic resistance device includes a first ferromagnetic layer formed of ferromagnetic material, a non-magnetic insulative tunnel barrier layer coupled to the first ferromagnetic layer, a second ferromagnetic layer formed of ferromagnetic material and coupled to the tunnel barrier layer, and an anti-ferromagnetic layer formed of anti-ferromagnetic material. The second ferromagnetic layer is provided between the tunnel barrier layer and the anti-ferromagnetic layer. A perpendicular line from an optional position of the surface of the second ferromagnetic layer passes through at least two of the crystal grains of the second ferromagnetic layer.

An apparatus and method for highly controlled electrodeposition, particularly useful for electroplating submicron structures. Enhanced control of the process provides for a more uniform deposit thickness over the entire substrate, and permits reliable plating of submicron features. The apparatus includes a pressurized electrochemical cell to improve plating efficiency and reduce defects, vertical laminar flow of the electrolyte solution to remove surface gases from the vertically arranged substrate, a rotating wafer chuck to eliminate edge plating effects, and a variable aperture to control the current distribution and ensure deposit uniformity across the entire substrate. Also a dynamic profile anode whose shape can be varied to optimize the current distribution to the substrate. The anode is advantageously able to use metallic ion sources and may be placed close to the cathode thus minimizing contamination of the substrate.

An electromagnetic noise suppressor of the present invention has magnetic resonance frequency of 8 GHz or higher, and the imaginary part μ″_H of complex magnetic permeability at 8 GHz is higher than the imaginary part μ″_L of complex magnetic permeability at 5 GHz. Such an electromagnetic noise suppressor is capable of achieving sufficient electromagnetic noise suppressing effect over the entire sub-microwave band. The electromagnetic noise suppressor can be manufactured by forming a composite layer 3 on the surface of a binding agent 2 through physical deposition of a magnetic material on the binding agent 2. The structure with an electromagnetic noise suppressing function of the present invention is a printed wiring board, a semiconductor integrated circuit or the like that is covered with the electromagnetic noise suppressor on at least a part of the surface of the structure.

A film is formed at a high rate on the surface of an iron-boron-rare-earth-metal magnet having a given shape, while effectively using dysprosium or terbium as a film-forming material. Thus, productivity is improved and a permanent magnet can be produced at low cost. A permanent magnet is produced through a film formation step in which a film of dysprosium is formed on the surface of an iron-boron-rare-earth-metal magnet of a given shape and a diffusion step in which the magnet coated is subjected to a heat treatment at a given temperature to cause the dysprosium deposited on the surface to diffuse into the grain boundary phase of the magnet. The film formation step comprises: a first step in which a treating chamber where this film formation is performed is heated to vaporize dysprosium which has been disposed in this treating chamber and thereby form a dysprosium vapor atmosphere having a given vapor pressure in the treating chamber; and a second step in which a magnet kept at a temperature lower than the internal temperature of the treating chamber is introduced into this treating chamber and the dysprosium is selectively deposited on the magnet surface based on a temperature difference between the treating chamber and the magnet until the magnet temperature reaches a given value.

A method of manufacturing an active element for use with a magnetic head includes depositing a magnetic material to form a magnetic member, and nitriding the magnetic member after the depositing step. Preferably, the depositing step comprises depositing nickel-iron alloy, and the nitriding step comprises plasma nitriding the magnetic member. Advantageously, plasma nitriding may be performed at a temperature below 300 degrees Celsius to avoid adverse effects to components of the active element, such as organic planars. Active elements manufactured according to the method of the invention are also disclosed.

Nanostructures and methods of making nanostructures having self-assembled nanodot arrays wherein nanodots are self-assembled in a matrix material due to the free energies of the nanodot material and/or differences in the Gibb's free energy of the nanodot materials and matrix materials.

A perpendicular magnetic recording medium includes: a substrate; at least one underlayer formed above the substrate; and a perpendicular magnetic recording layer formed above the at least one underlayer, an easy magnetization axis of the perpendicular magnetic recording layer being oriented perpendicular to the substrate, the perpendicular magnetic recording layer including magnetic crystal particles and grain boundaries surrounding the magnetic crystal particles, wherein the grain boundaries contain an oxide of silicon and at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Ca, Sr, and Ba, and the ratio of a total amount of substance of Si, Li, Na, K, Rb, Cs, Ca, Sr, and Ba in the perpendicular magnetic recording layer is no less than 1 mol % and no more than 20 mol %.

The present invention is a high-frequency current essentially of M—X—Y, where M is Fe, Co, and/or Ni, X is an element other than M or Y, and Y is F, N, and/or O. The maximum value μ″_max of the loss factor μ″ of this material exists at 100 MHz to 10 GHz. A relative bandwidth bwr is not greater than 200% where the relative bandwidth bwr is obtained between two frequencies at which the value of μ″ is 50% of μ″_max and normalizing the frequency bandwidth at the center frequency.

The invention belongs to the technical field of a magnetic film material, in particular to a magnetic composite organic nanometer granular film with giant magnetic resistance effect and a method for preparing the same. The film material is prepared and obtained from a magnetic metal material and an organic semiconductor material by a co-evaporation method; the nanometer granules of the magnetic metal material are evenly embedded in an organic semiconductor substrate and expressed as: (A)x(B)1-x, x is more than 0.28 and less than 0.56, wherein A is the magnetic metal material; and B is the organic semiconductor material. The film material can be widely used for a magnetic sensor, a magnetic memory, a temperature sensor and other element devices.

The magnetic film of a magnetic device can be practically used and can have saturation magnetization greater than 2.45T. The magnetic film is an alloy film consisting of iron, cobalt and palladium. Molar content of palladium is 1-7%, and the alloy film is formed by a spattering method. Another magnetic film comprises a ferromagnetic film, and a palladium film or an alloy film including palladium, which are alternately layered. Thickness of the palladium film or the alloy film including palladium is 0.05-0.28 nm, and the layered films are formed by a spattering method or a evaporation method.

The disclosure describes multilayer hard magnetic materials including at least one layer including alpha"-Fe16N2 and at least one layer including alpha"-Fe16(NxZ1-x)2 or a mixture of alpha"-Fe16N2 and alpha"-Fe16Z2, where Z includes at least one of C, B, or O, and x is a number greater than zero and less than one. The disclosure also describes techniques for forming multilayer hard magnetic materials including at least one layer including alpha"-Fe16N2 and at least one layer including alpha"-Fe16(NxZ1-x)2 or a mixture of alpha"-Fe16N2 and alpha"-Fe16Z2 using chemical vapor deposition or liquid phase epitaxy.

The method of manufacturing rare earth thick film magnet comprising a step of forming an alloy layer of 30-100 μm thick having a general formula R_XB_YTM_Z on a substrate by a physical deposition process, and a step of heat-treating the alloy layer to form a thick film magnetic layer having R₂TM₁₄B phase as a main phase. In the general formula, R is at least one of rare earth elements, B is boron, TM is iron or its alloy partly substituted by cobalt. X is 0.1-0.2, Y is 0.05-0.2 and Z=1-X-Y. Further, the method of the present invention includes a step of laminating a plurality of alloy layers formed on a substrate together with the substrate. A motor comprising rare earth thick film magnet of the present invention is extremely small while obtaining high output.

The invention discloses a vacuum evaporation coating method and a rare earth magnet covered with an evaporation coating. The method includes steps of: 1) installing a rare earth magnet workpiece to a workpiece rest before pretreatment; 2) sending the workpiece rest into a reaction chamber, and performing preoxidation; 3) sending the workpiece rest to a coating chamber, vacuumizing, heating a meta evaporating material M to an evaporation temperature, and subjecting the rare earth magnet workpiece to evaporation coating; and 4) cooling, restoring to normal pressure and taking the workpiece out. According to the method, the rare earth magnet is subjected to trace oxidation in advance and is subjected to replacement by feeding M steam, thus preventing excessive oxidation of the rare earth magnet, and obtaining a dense MO distribution thin layer and an M layer firmly connected to the MO distribution thin layer.

There is provided a magnetic material with a high saturation magnetization of 2.46 teslas or above. By using this magnetic material in a recording head, it is possible to record information with a higher density on a recording medium. The magnetic material can also be applied to various kinds of solid-state devices. A magnetic film for a magnetic device is composed of a multilayer film where ferromagnetic films and palladium films or alloy films including palladium are alternately laminated. The laminated palladium films or alloy films including palladium have a main crystal structure that is a body-centered cubic structure, and the multilayer film is formed by dry processing.

Disclosed is a magnetic recording medium which includes a substrate, an underlayer, and a perpendicular magnetic recording layer, and in which this perpendicular magnetic recording layer contains magnetic crystal grains and a matrix surrounding the magnetic crystal grains, and the matrix contains an element selected from Zn, Cd, Al, Ga, and In, and a component selected from P, As, Sb, S, Se, and Te.

There is provided a magnetic material with a high saturation magnetization of 2.46 teslas or above. By using this magnetic material in a recording head, it is possible to record information with a higher density on a recording medium. The magnetic material can also be applied to various kinds of solid-state devices. The magnetic material is composed of an alloy film made of iron, cobalt, and palladium, wherein a mole percentage content of palladium is set equal to 0.7% or greater but less than 1.0%, and the magnetic material is formed by dry processing.

A preparation method of a multi-ferric heterojunction thin film is characterized by comprising the steps of 1) combining a ferromagnetic thin film on a stable-structure ferroelectric thin film substrate by methods such as pulse laser deposition, magnetron sputtering or molecular beam epitaxy during preparation of the thin film to obtain a ferromagnetic/ferroelectric heterojunction thin film, wherein the ferroelectric thin film substrate is one or PMN-PT, BFO, PZT, BTO, PTO and PZN-PT, and the ferromagnetic thin film is one of Fe, Co, Ni, CoFe, CoFeB, FeNi, FeSi, FeSiAl and FeAl; and 2) placingthe ferromagnetic/ferroelectric heterojunction thin film prepared in the step 1) in a heat treatment furnace by interface control, introducing a nitrogen-containing gas at a constant rate, performingnitrogen impregnation processing for 0.5-48 hours under a temperature of 150-600 DEG C, reducing a temperature, cooling with the furnace to a room temperature, and taking out a sample, wherein the stable-structure ferroelectric thin film is not affected during the heat treatment process, nitrogen atoms can be impregnated into the ferromagnetic thin film to generate a gap solid solution or a new phase, cause lattice expansion and generate stress at an interface, and the nitrogen-containing gas is one of nitrogen, ammonia, nitrogen and hydrogen and ammonia and hydrogen.