High power TDD radio frequency power amplifier

A technology of radio frequency power and amplifier, which is applied in the field of improvement of high-power TDD radio frequency power amplifier technology, and can solve problems such as the difficulty in realizing high-power TDD radio frequency amplifiers, the inability of power tubes to perform gate-level zero-bias operation, and the inability to take advantage of the advantages of TDD systems, etc. , to achieve the effect of improving power utilization efficiency, improving market competitiveness, and simplifying power requirements

Inactive Publication Date: 2006-03-22
胡嘉宾 +1
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  • Abstract
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Problems solved by technology

Because its power supply voltage is as low as 12 volts, its working current is relatively large
In addition, since the power tube cannot work with zero bias voltage at the gate level, the requirement for its switch must be able to achieve high-speed switching of large current at the drain level, which will bring negative effects on the long-term working stability and service life of the components. influences
Because this high-power power tube is difficult to manufacture and the cost is extremely high, it is difficult and expen

Method used

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  • High power TDD radio frequency power amplifier
  • High power TDD radio frequency power amplifier

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Embodiment Construction

[0013] The present invention adopts all existing devices, organically combines digital and analog circuits, low-frequency and high-frequency circuits, skillfully utilizes the characteristics of various devices, and realizes a novel, practical, reliable and low-cost LDMOS high-power TDD RF amplifier.

[0014] See attached figure 1 , 2 :

[0015] In the figure, the basic LDMOS power amplifier circuit is composed of:

[0016] J1 (SMA connector) is the signal input port, J2 (SMA connector) is the signal output port,

[0017] ISO101 (isolator) is the input isolator, ISO102 (isolator) is the output isolator,

[0018] Q101 is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) amplifier tube,

[0019] C101 (capacitor) is the DC blocking capacitor at the input end, C107 (capacitor) is the DC blocking capacitor at the output end,

[0020] R101 (resistor), C102 (capacitor), and C103 (capacitor) are grid feed filter circuits,

[0021] C104 (capacitor), C105 (capacitor), and C1...

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Abstract

This invention relates to a large power TDD RF-power amplifier composed of a LDMOS power amplifying circuit and a grid switch control circuit, in which, the first pin of a single-pole double-throw analog switch is connected with one end of a resistor, the other end of the resistor is linked to the earth, the second pin of the switch is connected with the 5V supply, the third and the fourth are connected to the earth directly, the fifth is parallel to one pin of a condenser, the sixth is parallel to the grid voltage, one end of a condenser and the other is connected to the earth. This invention applies the high-speed analog switch circuit to switch the grid of LDMOS to work between zero-bias and the static current bias to switch the working state of the amplifier to realize the TDD mode of the amplifier.

Description

technical field [0001] The invention is a radio frequency power amplifier applied in wireless communication technology, and particularly relates to the improvement of high-power TDD radio frequency power amplifier technology using LDMOS devices in microwave communication. Background technique [0002] For the current TDD system, the power amplifier used in the base station not only needs to output high power, but also must have the function of high-speed switching. [0003] For the PHS system base stations that are most used in the market at present, a kind of potassium arsenide GaAs power tube amplifier is basically used. Because its power supply voltage is as low as 12 volts, the working current when it works is relatively large. In addition, since the power tube cannot work with zero bias voltage at the gate level, the requirement for its switch must be able to achieve high-speed switching of large current at the drain level, which will bring negative effects on the long...

Claims

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Application Information

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IPC IPC(8): H03F1/30H03F3/21H03K17/04
Inventor 胡嘉宾陈岩
Owner 胡嘉宾
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