High power TDD radio frequency power amplifier

Abstract

This invention relates to a large power TDD RF-power amplifier composed of a LDMOS power amplifying circuit and a grid switch control circuit, in which, the first pin of a single-pole double-throw analog switch is connected with one end of a resistor, the other end of the resistor is linked to the earth, the second pin of the switch is connected with the 5V supply, the third and the fourth are connected to the earth directly, the fifth is parallel to one pin of a condenser, the sixth is parallel to the grid voltage, one end of a condenser and the other is connected to the earth. This invention applies the high-speed analog switch circuit to switch the grid of LDMOS to work between zero-bias and the static current bias to switch the working state of the amplifier to realize the TDD mode of the amplifier.

Description

technical field [0001] The invention is a radio frequency power amplifier applied in wireless communication technology, and particularly relates to the improvement of high-power TDD radio frequency power amplifier technology using LDMOS devices in microwave communication. Background technique [0002] For the current TDD system, the power amplifier used in the base station not only needs to output high power, but also must have the function of high-speed switching. [0003] For the PHS system base stations that are most used in the market at present, a kind of potassium arsenide GaAs power tube amplifier is basically used. Because its power supply voltage is as low as 12 volts, the working current when it works is relatively large. In addition, since the power tube cannot work with zero bias voltage at the gate level, the requirement for its switch must be able to achieve high-speed switching of large current at the drain level, which will bring negative effects on the long...

AI Technical Summary

Problems solved by technology

Because its power supply voltage is as low as 12 volts, its working current is relatively large

In addition, since the power tube cannot work with zero bias voltage at the gate level, the requirement for its switch must be able to achieve high-speed switching of large current at the drain level, which will bring negative effects on the long-term working stability and service life of the components. influences

Because this high-power power tube is difficult to manufacture and the cost is extremely high, it is difficult and expensive to realize a high-power TDD RF amplifier using this power tube

[0004] There is a new type of LDMOS power device, but for the high-power RF amplifier using LDMOS device, in the system of TDD system, it is difficult to meet the requirements of the actual index due to the failure to realize the high-speed switching of the working state, even if the expensive High-speed RF switch is used to achieve switching, and its power utilization rate still cannot be improved, and the advantages of the TDD system cannot be fully utilized.

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