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Transition metal chalcogenide nanowire and preparation method and application thereof

A technology of transition metal chalcogenides and transition metals, applied in the field of materials, can solve the problems of irregular shape of nanowires, low efficiency of nanowire preparation, complicated operation, etc., achieve regular shape, overcome difficult control of nanowire width, and overcome difficult control The effect of irradiated energy

Inactive Publication Date: 2018-09-18
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention solves the technical problems of low preparation efficiency of transition metal chalcogenide nanowires, complicated operation and irregular shape of the obtained nanowires in the prior art

Method used

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  • Transition metal chalcogenide nanowire and preparation method and application thereof
  • Transition metal chalcogenide nanowire and preparation method and application thereof
  • Transition metal chalcogenide nanowire and preparation method and application thereof

Examples

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Embodiment 1

[0031] Prepare Mo in the embodiment of the present application 6 Se 6 The method of nanowires adopts molecular beam epitaxy, and the preparation method is mainly divided into three steps:

[0032] (1) Preparation of large-area graphene. Purchase a commercial SiC substrate from MTI, and maintain the SiC sample at 600°C for nearly 3 hours to remove impurity atoms adsorbed on the surface. Under the atmosphere of Si atomic flow, the temperature of SiC was raised to 950°C and maintained for 2 minutes, and then the substrate temperature was lowered to 600°C. Repeat for 5 cycles. Finally, in an atmosphere without Si atom flow, the substrate temperature was further increased to 1350 °C and maintained for 5 minutes to remove Si atoms adsorbed on the surface. Repeat this step 3 times. In the end, we will obtain large-area layered graphene, which is characterized by scanning tunneling microscopy, and the surface topography is shown in Figure 2. Figure 2(a) is a topography image of ...

Embodiment 2

[0036] By controlling the annealing time, Mo can be regulated 6 Se 6 The formation ratio of nanowires on the boundary. The method for preparing transition metal chalcogenide nanowires in this example is the same as Example 1, except that MoSe 2 The annealing time of the film was set to 1.75 hours, and the morphology of transition metal chalcogenide nanowires obtained is shown in Figure 5(a). The size of Figure 5(a) is 100nm×100nm, and the scanning conditions are 3V, 4pA. It can be seen from Figure 5(a) that a part of MoSe 2 Mo 6 Se 6 Nanowires.

Embodiment 3

[0038] By controlling the annealing time, Mo can be regulated 6 Se 6 The formation ratio of nanowires on the boundary. The method for preparing transition metal chalcogenide nanowires in this example is the same as Example 1, except that MoSe 2 The film annealing time was set to 11.5 hours, and the morphology of transition metal chalcogenide nanowires obtained was shown in Figure 5(b). The size of Figure 5(b) was 100nm×100nm, and the scanning conditions were 3V, 6pA. From Figure 5(b), it can be seen that all the boundaries of the MoSe2 thin film undergo a structural phase transition to form Mo 6 Se 6 Nanowires.

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Abstract

The invention provides a transition metal chalcogenide nanowire and a preparation method and an application thereof. The preparation method comprises that under vacuum conditions, a metal, semi-metalor semiconductor substrate is kept to be heated to 250 DEG C-350 DEG C, transition metal atoms and chalcogenide atoms are evaporated onto the substrate, a transition metal chalcogenide film is prepared, the transition metal chalcogenide film is heated and annealed, and thus the transition metal chalcogenide nanowire is prepared. The prepared nanowire has the advantages of regular shape, definite width, uniform distribution of density of states, no impurity ions, simple operation and high preparation efficiency, and can be used for studying quantum physical phenomena in one-dimensional systems,wires in nanoscale circuits, and metal-monatomic layer semiconductor contact.

Description

technical field [0001] The invention belongs to the field of materials, and more specifically relates to a transition metal chalcogenide nanowire and a preparation method thereof. Background technique [0002] Transition metal chalcogenide nanowires, as a new type of nanomaterial, have electrical, magnetic and chemical properties different from those of two-dimensional transition metal chalcogenides. Two-dimensional transition metal chalcogenides MX 2 (M is a transition metal atom; X is a chalcogen atom) is generally semiconducting, whereas its corresponding nanowire has metallic properties. Therefore, transition metal chalcogenide nanowires can be used as connecting wires to connect two-dimensional layered films to form two-dimensional closed loops, making the practical application of two-dimensional layered materials possible. At the same time, nanowires are good carriers for studying certain physical laws. For example, the relevant mechanisms of charge density waves ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04B82Y40/00B82Y30/00
CPCC01B19/007B82Y30/00B82Y40/00C01P2004/04
Inventor 付英双鲜晶晶杨星张文号
Owner HUAZHONG UNIV OF SCI & TECH
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