35results about How to "Short circuit will not" patented technology

The invention discloses a metal mesh structure capable of reducing breakpoint short out. The metal mesh structure includes a plurality of first main channel metal wires, a plurality of second main channel metal wires, a plurality of first nominal metal wires and a plurality of second nominal metal wires; the first main channel metal wires are mutually arranged in the first direction at intervals; the second main channel metal wires are mutually arranged in the second direction at intervals; and the second main channel metal wires and the first main channel metal wires are staggered to form a plurality of main channel meshes. The invention further discloses a manufacturing method of the metal mesh structure capable of reducing breakpoint short out. The metal mesh structure and the manufacturing method can effectively reduce breakpoint short out of metal meshes.

A power conversion apparatus is provided with an inverter circuit, an output short-circuiting circuit, and a control circuit. The inverter circuit comprises a first inverter switch that is configured so as to generate a first polarity voltage from DC voltage, and a second inverter switch that is configured so as to generate a second polarity voltage from the DC voltage. The output short-circuiting circuit comprises a first short-circuiting switch that is configured so as to short-circuit a power supply line that outputs the first polarity voltage, out of a pair of power supply lines, and a second short-circuiting switch that is configured so as to short-circuit a power supply line that outputs the second polarity voltage, out of the pair of power supply lines. Upon switching the polarity from the first polarity to the second polarity, the control circuit turns off the first short-circuiting switch before the timing whereby the second inverter switch is turned on.

The invention provides a method for manufacturing a probe short-circuit prevention structure which is an insulated separation structure; each separation structure can be embedded in a probe body or a corresponding position of a probe seat, which is at the interval of the probes, thus causing each probe to have the efficacy of mutual separation when in use.

The invention discloses a pixel structure and a maintenance method thereof, which relates to the technical field of liquid crystal display and solves the problems of complex maintenance progress and necessary maintenance device replacement for the traditional pixel structure. The invention embodiment is provided with a light shading part corresponding to data scanning lines on a grid and a grid layer of grid scanning lines. The light shading part is of a sealed structure and is connected to the grid scanning lines. The invention embodiment is mainly applied to the liquid crystal display, in particular to the liquid crystal display adopting TFT manufacture technology.

The invention relates to a waterproof socket, including an insulating part, an upper cover, a first waterproof silicone pad, a live wire insertion piece, a live wire introduction piece, a live wire bottom connection piece, a neutral line insertion piece, a neutral line introduction piece, a neutral line bottom connection piece, Inner floating part of live line, outer floating part of live line, inner floating part of neutral line and outer floating part of neutral line. The live wire jack and the neutral wire jack on the insulator of the waterproof socket are isolated from each other and are arranged inside the insulator. Water cannot enter the socket from the live wire jack and the neutral wire jack. The upper cover and the first waterproof The silicone pad is used to prevent water from entering the inside of the socket from the periphery of the socket, and to avoid the short circuit of the live wire lead-in piece and the neutral line lead-in piece inside the socket; The drive reset structure realizes the conduction and disconnection of the circuit, has high reliability, long service life, realizes isolated drive, and has no contact wear, so it has a better waterproof effect.

The invention provides a flat FCB (Flip Chip Bonding) GaN-based LED (Light-Emitting Diode) chip structure comprising a substrate. An N-type GaN layer, a QW (Quantum Well) active area, a P-type GaN layer, a current extension level and a light-reflecting layer are sequentially arranged below the substrate from top to bottom, a stepped surface to the N-type GaN layer is etched on the light-reflecting layer, an N electrode is made on the N-type GaN layer of the stepped surface, a P electrode is made on the light-reflecting layer and arranged on the same plane with the outer end of the P electrode, a transparent insulated medium film is coated on the plane of the P electrode bonding pad and the N electrode bonding pad except the regions of P electrode bonding pad and the N electrode bonding pad, a P bonding board is made at the outer end of the P electrode bonding spot, an N bonding board is made at the outer end of the bonding point of the N electrode, and the P bonding board and the N bonding board are bonded on a P electrode area and an N electrode area of a conductive Si or SiC substrate by cocrystallization or alloy. The insulated medium film is coated outside the PN bonding pads to prevent PN from being subjected to short circuits and a limit N-area electrode conductive flat is spliced to the P area desk.

The invention provides a radial diffuser channel pretreatment method. The method comprises the following steps that S21, an electrolytic machining environment is prepared; S22, a through-hole cathodeis used for carrying out vibration feeding electrolytic machining on a channel of a radial diffuser at the feeding speed of 5mm / min-6mm / min, and the channel is broken through by using a burr working section of the through-hole cathode; and S23, the through-hole cathode is used for carrying out vibration feeding electrolytic machining on the channel of at the feeding speed of 3mm / min-4mm / min, uneven allowance on the inner wall of the channel is eliminated by using an inner wall working section of the through-hole cathode. Burrs can be eliminated through the burr working section of the through-hole cathode to break through the channel, the problem that a short circuit is generated by contact between a forming cathode and burrs when the forming cathode carries out vibration feeding electrolytic machining on the channel is avoided, the uneven allowance on the inner wall of the channel can be eliminated by using the inner wall working section of the through-hole cathode, and the problem that a short circuit is generated by contact between a forming cathode and the inner wall of the channel when the forming cathode carries out vibration feeding electrolytic machining on the channel is avoided.

A preparation method of a lithium ion battery and the lithium battery thereof. The preparation method of the lithium ion battery comprises the following steps: coating a positive electrode active material mixture on the A side of the aluminum foil, and coating an insulating layer on the B side of the aluminum foil; electroplating metal lithium On the A side of the copper foil, and the insulating layer is coated on the B side of the copper foil; the separator is arranged between the positive electrode sheet and the negative electrode sheet, and the A surface of the positive electrode sheet is opposite to the B surface of the negative electrode sheet or the negative electrode sheet The A side is arranged opposite to the B side of the positive electrode sheet; the battery pack is wound or a plurality of battery packs are stacked. The preparation method of the lithium ion battery of the present invention can improve the energy density of the battery by arranging a positive electrode sheet of a single-sided active material and a negative electrode sheet using lithium metal as the negative electrode, and at the same time, an insulating layer is arranged on the positive electrode sheet and the negative electrode sheet , so that the generated lithium dendrites can be blocked, thereby preventing the short circuit caused by the contact between the lithium dendrites and the positive electrode sheet.

The invention relates to a bipolar electrode, a laminated battery and a method for preparing a laminated battery. The bipolar electrode includes a flexible conductive base material, an insulating strip and an insulating layer, and the flexible conductive base material has a first surface opposite to the other. and the second surface, the first surface and the second surface both include a positive electrode area, a bending area and a negative electrode area arranged in sequence, the positive electrode area is coated with a positive electrode active material, and the negative electrode area is coated with a negative electrode active material; the positive electrode on the first surface The region is opposite to the positive electrode region on the second surface, the negative electrode region on the first surface is opposite to the negative electrode region on the second surface; the bending region on the first surface is opposite to the bending region on the second surface; the bending region can be bent to The flexible conductive substrate is bent from the unfolded state to the half-folded state, and the half-folded state is that the positive electrode area and the negative electrode area are facing each other; the insulating strip is arranged in the bending area; the insulating layer is sandwiched between the positive electrode active material and the negative electrode active material. The bipolar electrode can have simple processing technology, low processing cost, and improve the energy density and service life of the laminated battery.