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Metal mesh structure capable of reducing breakpoint short out and manufacturing method thereof

A technology of metal grid and manufacturing method, which is applied in the direction of cable/conductor manufacturing, circuit, conductor, etc., and can solve problems such as test abnormality, breakpoint short circuit, etc.

Inactive Publication Date: 2016-10-12
INTERFACE OPTOELECTRONICS SHENZHEN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, the metal grid structure (7) of the conventional technology for reducing breakpoint short circuit is prone to short circuit at the breakpoint when the manufacturing process is abnormal, resulting in figure 1 The parasitic equivalent capacitance shown by the dotted line will cause abnormal test

Method used

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  • Metal mesh structure capable of reducing breakpoint short out and manufacturing method thereof
  • Metal mesh structure capable of reducing breakpoint short out and manufacturing method thereof
  • Metal mesh structure capable of reducing breakpoint short out and manufacturing method thereof

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Embodiment Construction

[0060]In order to enable those skilled in the art to understand the purpose of the present invention, preferred embodiments of the present invention are described in detail below in conjunction with the drawings.

[0061] Please refer to figure 2 As shown, the metal grid structure (1) for reducing breakpoint and short circuit of the present invention includes a plurality of first main channel metal lines (10), a plurality of second main channel metal lines (11), a plurality of first dummy metal lines ( 12) and a plurality of second dummy metal lines (13).

[0062] The first main channel metal lines (10) are arranged at intervals in a first direction (2). The second main channel metal lines (11) are arranged at intervals in a second direction (3), and the second main channel metal lines (11) are connected to the first main channel metal lines (10) Interleaved to form a grid of multiple main channels (14).

[0063] The first dummy metal lines (12) are arranged at intervals i...

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Abstract

The invention discloses a metal mesh structure capable of reducing breakpoint short out. The metal mesh structure includes a plurality of first main channel metal wires, a plurality of second main channel metal wires, a plurality of first nominal metal wires and a plurality of second nominal metal wires; the first main channel metal wires are mutually arranged in the first direction at intervals; the second main channel metal wires are mutually arranged in the second direction at intervals; and the second main channel metal wires and the first main channel metal wires are staggered to form a plurality of main channel meshes. The invention further discloses a manufacturing method of the metal mesh structure capable of reducing breakpoint short out. The metal mesh structure and the manufacturing method can effectively reduce breakpoint short out of metal meshes.

Description

technical field [0001] The present invention relates to a metal grid structure and manufacturing method for reducing breakpoint short circuit, especially a metal grid structure and method for reducing breakpoint short circuit by increasing breakpoints. Background technique [0002] Metal Mesh is a kind of conductive material, which looks like a grid composed of extremely thin metal wires, that is, the metal wires are made on the touch sensor, and the purpose is to replace the traditional indium tin oxide Thin-film conductive materials, but indium tin oxide cannot replace metal grids. In addition, indium tin oxide has its application limitations. The conductivity of indium tin oxide films is not enough to meet the needs of medium and large-sized touch panels. Metal grid touch technology In terms of product application, there is no size limit, which is more competitive. [0003] Metal mesh is considered to be an important touch technology in the next stage, mainly due to its ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/041H01B5/00H01B13/00
CPCG06F3/0412G06F2203/04103H01B5/00H01B13/00G06F3/041G06F2203/04112G06F3/044
Inventor 王琬珺曾哲纬杨岳峰陈柏林黄彦衡
Owner INTERFACE OPTOELECTRONICS SHENZHEN
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