35 results about "Hyperbolic metamaterials" patented technology

Implementing a layered hyperbolic metamaterial in a vertical cavity surface emitting laser (VCSEL) to improve thermal conductivity and thermal dissipation thereby stabilizing optical performance. Improvement in the thermal management and power is expected by replacing the distributed Bragg reflector (DBR) mirrors in the VCSEL. The layered metamaterial structure performs the dual function of the DBR and the heat spreader at the same time.

The invention discloses a Cerenkov radiation device and a manufacturing method thereof, and a radiation extraction method. The Cerenkov radiation device comprises a metal cycle nanometer slit structure, a hyperbolic metamaterial structure and an electron-emitting source, wherein the hyperbolic metamaterial structure is arranged on an upper surface of the metal cycle nanometer slit structure; the electron-emitting source is arranged on an upper surface of the hyperbolic metamaterial structure; and the electron-emitting source includes an anode, a cathode and a grid electrode. The Cerenkov radiation device does not need a high voltage. A characteristic that a phase velocity of light in the hyperbolic metamaterial structure can be reduced by several orders of magnitudes compared to a velocity in a traditional material is used so that a required electronic flight speed generated by Cerenkov radiation can be greatly reduced; and then production cost generated by the Cerenkov radiation device is decreased and safety performance is increased.

A hyperbolic metamaterial planar antenna, comprising a ground plane, a hyperbolic metamaterial structure layer, a substrate, and a radiation antenna; the hyperbolic metamaterial structure layer is formed by alternately stacking semiconductor layers and dielectric layers, formed on the ground plane The substrate is formed on the hyperbolic metamaterial layer; the radiation antenna is formed on the substrate. The hyperbolic metamaterial planar antenna structure is easy to produce and manufacture, can effectively improve the gain and anti-interference ability of the planar antenna, is easy to integrate with other devices, and is not easily damaged.

The invention provides an on-chip light source, a preparation method of an on-chip light source and an optoelectronic device. An insulating layer is formed on a substrate, an optical array layer is formed on the insulating layer, an isolation layer is formed on the optical array layer, and a two-dimensional optical array layer is formed on the isolation layer. The material layer forms a medium layer on the two-dimensional material layer, and forms a hyperbolic metamaterial layer on the medium layer. Wherein, when the resonance peak of the photon mode of the optical array layer is equal to the wavelength of the exciton peak of the two-dimensional material layer, the luminous intensity of the two-dimensional material layer will be enhanced. In addition, the surface plasmons of the hyperbolic metamaterial layer will have a strong coupling with the two-dimensional material layer, further enhancing the Purcell effect. The present invention utilizes hyperbolic metamaterials to enhance the Purcell effect of two-dimensional materials, which can not only significantly improve the luminous intensity of the on-chip light source, but also achieve high luminous efficiency and fast response speed, small size, compact structure, and easy high-density integration And have good CMOS integration process compatibility.

The invention relates to a hyperbolic metamaterial, which comprises two metal flat plates arranged in parallel and a composite material, wherein the composite material is arranged between the metal flat plates, the surface of the composite material is attached to the metal flat plates, the composite material is formed by arranging at least two non-metal materials with different dielectric constants in a minimum repeating unit period in the propagation direction of a conducted wave, and the length of the minimum repeating unit is smaller than the wavelength of the conducted wave in the propagation direction of the conducted wave, wherein the product of equivalent dielectric constants in at least two different directions of a structure formed by the metal flat plates and the composite material is less than zero. The invention also relates to a preparation method of the hyperbolic metamaterial.

A hyperbolic metamaterial assembly comprising alternating one or more first layers and one or more second layers forming a hyperbolic metamaterial, the one or more first layers comprising an intrinsic or non-degenerate extrinsic semiconductor and the one or more second layers comprising a two-dimensional electron or hole gas, wherein one of in-plane or out-of-plane permittivity of the hyperbolic metamaterial assembly is negative and the other is positive.

A method for fabricating a hyperbolic metamaterial coating having a near-zero refractive index is disclosed. The direction of propagating light changes by means of generating subwavelength structures that alter the coatings permittivity and permeability. The coating can be deposited on lenses or incorporated into optical devices. This type of metamaterial can be utilized to direct light towards sensors or to collect light efficiently.

The invention discloses a GaN-based semiconductor light-emitting device enhanced by a three-dimensional cavity hyperbolic metamaterial, comprising a substrate, a GaN epitaxial layer, a negative electrode and a positive electrode, wherein the GaN epitaxial layer covers the substrate, and the surface of the GaN epitaxial layer A three-dimensional cavity is opened on it, and the three-dimensional cavity is filled with a hyperbolic metamaterial to form a three-dimensional cavity hyperbolic structure. The negative electrode is located on the surface of n-GaN, and the positive electrode is located on the transfer substrate or the surface of p-GaN. Semiconductor light-emitting devices can realize the improvement of quantum efficiency and light extraction efficiency in a specific spectral range.