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LED emitters with integrated nano-photonic structures to enhance eqe

A reflector, a technology that will be used in the direction of instruments, optics, optical components, etc., can solve problems such as dissipation, achieve the effect of reducing field confinement and improving kinetic energy

Pending Publication Date: 2020-07-28
LUMILEDS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Furthermore, the energy radiated by the active region is usually trapped in the form of surface waves and eventually dissipated due to ohmic losses
Both mechanisms lead to lower EQE

Method used

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  • LED emitters with integrated nano-photonic structures to enhance eqe
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  • LED emitters with integrated nano-photonic structures to enhance eqe

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Embodiment Construction

[0021] In the following description, numerous specific details are set forth, such as specific structures, components, materials, dimensions, process steps and techniques, in order to provide a thorough understanding of the present embodiments. However, it will be understood by those of ordinary skill in the art that these embodiments may be practiced without these specific details. In other instances, well-known structures or process steps have not been described in detail in order to avoid obscuring the embodiments. It will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "over" another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly on" another element, there are no intervening elements present. It will also be understood that when an element is referred to as being "under," "under" or "under" a...

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Abstract

A device, system and method for producing enhanced external quantum efficiency (EQE) LED emission are disclosed. The device, system and method include a patterned layer configured to transform surfacemodes into directional radiation, a semiconductor layer formed as a III / V direct band gap semiconductor to produce radiation, and a metal back reflector layer configured to reflect incident radiation. The patterned layer may be one-dimensional, two-dimensional or three-dimensional. The patterned layer may be submerged within the semiconductor layer or within the dielectric layer. The semiconductor layer is p-type gallium nitride (GaN). The patterned layer may be a hyperbolic meta-materials (HMM) layer and may include Photonic Hyper-crystal (PhHc), or may be a low or high refractive index material or may be a metal.

Description

[0001] Cross References to Related Applications [0002] This application claims U.S. Provisional Application No. 62 / 683,410, filed June 11, 2018, U.S. Provisional Application No. 62 / 573,383, filed October 17, 2017, and U.S. Non-Provisional Application No. No. 16 / 160,738 titled " LED emitters with integrated nanophotonic structures for enhanced EQE ”, and European Patent Application No. 18158917.7 filed February 27, 2018, all of which are hereby incorporated by reference as if fully set forth. technical field [0003] The present invention relates to light emitting diode (LED) emitters, and more particularly, to LED emitters with integrated nanophotonic structures to enhance external quantum efficiency (EQE). Background technique [0004] The internal quantum efficiency (IQE) of multiple quantum well (MQW) light-emitting diodes (LEDs) is limited by a droop-related mechanism. Therefore, the pump IQE is one of the main limiting factors for high luminous efficacy at high curr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20H01L33/46H01L33/58H01L33/32H01L33/10
CPCH01L33/20H01L33/32H01L33/46H01L33/58H01L2933/0083H01L33/10H01L33/0066H01L33/06G02B27/0977H01L33/60
Inventor V.A.塔马T.罗佩斯
Owner LUMILEDS
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