A three-dimensional cavity hyperbolic metamaterial-enhanced gan-based semiconductor light-emitting device
A technology for light-emitting devices and semiconductors, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low light extraction efficiency, insignificant improvement of device performance, and poor QW-SP coupling effect.
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Embodiment 1
[0031] refer to figure 1 , in the horizontal device structure, the positive electrode 52 is located on the top of the p-GaN14, and the three-dimensional cavity 41 is opened on the upper surface of the p-GaN14, and the negative electrode 51 is located above the n-GaN12. During the preparation, the three-dimensional cavity 41 is prepared first , and then prepare the positive electrode 52 and the negative electrode 51, wherein, the n-GaN12 is exposed by ICP etching for the preparation of the negative electrode 51.
Embodiment 2
[0033] refer to figure 2 , in the vertical structure device, the positive electrode 52 is located on the transfer substrate 15, and the three-dimensional cavity 41 is opened on the surface of p-GaN14. During the preparation, the three-dimensional cavity 41 is prepared first, and then the transfer substrate is realized by bonding and laser lift-off. 15, the three-dimensional cavity 41 is located on the back of the light-emitting surface.
Embodiment 3
[0035] refer to image 3 , in the vertical structure device, the positive electrode 52 is located on the transfer substrate 15, and the three-dimensional cavity 41 is opened on the surface of n-GaN12. During the preparation, the transfer of the transfer substrate 15 is first realized by bonding and laser lift-off, and then the three-dimensional cavity 41 is carried out. The three-dimensional cavity 41 is located in front of the light-emitting surface.
[0036] The invention can be used for gallium nitride-based light-emitting devices of various types and in various bands, and can also be used for optoelectronic devices of semiconductor materials; Both excitation modes of electric pumping are applicable.
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