On-chip light source, preparation method of on-chip light source and optoelectronic device

Abstract

The invention provides an on-chip light source, a preparation method of the on-chip light source and a photoelectronic device. An insulating layer is formed on a substrate, an optical array layer is formed on the insulating layer, an isolating layer is formed on the optical array layer, a two-dimensional material layer is formed on the isolating layer, a dielectric layer is formed on the two-dimensional material layer, and a hyperbolic metamaterial layer is formed on the dielectric layer. When the wavelength of the resonance peak of the photon mode of the optical array layer is equal to the wavelength of the exciton peak of the two-dimensional material layer, the luminous intensity of the two-dimensional material layer is enhanced. In addition, the surface plasmon polaritons of the hyperbolic metamaterial layer can generate a strong coupling effect with the two-dimensional material layer, and the Purcell effect is further enhanced. According to the invention, the hyperbolic metamaterial is utilized to enhance the Purcell effect of the two-dimensional material, so that not only can the luminous intensity of the on-chip light source be remarkably improved, but also high luminous efficiency and high response speed can be realized, the size is small, the structure is compact, high-density integration is easy, and good CMOS integration process compatibility is realized.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices and semiconductor manufacturing, in particular to an on-chip light source, a preparation method of the on-chip light source and an optoelectronic device. Background technique [0002] Driven by the era of next-generation supercomputers and big data, silicon-based optoelectronics, with its small size, low power consumption, ultra-large bandwidth, and ultra-fast response speed, has become a leading technology to solve the explosive growth of massive data transmission requirements in optical communication systems . [0003] At present, silicon-based optoelectronics will enter the field of optical communication links on a smaller scale, that is, optical chip-to-optical chip or inside an optical chip. However, the indirect bandgap of silicon, which has an indirect bandgap, leads to low radiation efficiency and is not suitable for making monolithic light sources. In fact, light sources ...

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Problems solved by technology

[0004] The invention provides an on-chip light source, a preparation method of an on-chip light source and an optoelectronic device, which are used to solve the defects of low luminous efficiency, slow response speed and weak luminous intensity of optically integrated light-emitting devices in the prior art

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