Method for graphene epitaxial growth on 4H-SiC silicon surface
An epitaxial growth and graphene technology, applied in the field of microelectronics, can solve the problems of difficult to control the growth process, difficult to obtain large-scale uniform samples, and low uniformity.
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Embodiment 1
[0016] Embodiment 1, the steps of the present invention to epitaxially grow Graphene on the 4H-SiC silicon surface are as follows:
[0017] Step 1, remove sample surface pollutants.
[0018] For surface cleaning of 4H-SiC silicon surface, first use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.
[0019] Step 2, performing hydrogen etching on the 4H-SiC silicon surface.
[0020] Place the 4H-SiC silicon surface in a vacuum of 2.4×10 -6 mbar CVD furnace chamber, and feed hydrogen gas with a flow rate of 60l / min, when the temperature rises to 1400°C, then feed propane with a flow rate of 8ml / min, heat up to 1500°C, pressure 90mbar, keep for 10 minutes, and then cool down to room temperature Finally, take it out to remove surface scratches and form regular...
Embodiment 2
[0025] Embodiment 2, the steps of the present invention to epitaxially grow Graphene on the 4H-SiC silicon surface are as follows:
[0026] Step 1, remove sample surface contaminants.
[0027] For surface cleaning of 4H-SiC silicon surface, first use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.
[0028] Step 2, performing hydrogen etching on the 4H-SiC silicon surface.
[0029] Place the 4H-SiC silicon surface in a vacuum of 2.4×10 -6 mbar CVD furnace chamber, and feed hydrogen with a flow rate of 100l / min, when the temperature rises to 1500°C, then feed propane with a flow rate of 12ml / min, raise the temperature to 1650°C, press 100mbar, keep for 20 minutes, and then cool down to room temperature Finally, take it out to remove surface scratches and ...
Embodiment 3
[0034] Embodiment 3, the steps of the present invention to epitaxially grow Graphene on the 4H-SiC silicon surface are as follows:
[0035] Step A, remove sample surface contaminants.
[0036] For surface cleaning of 4H-SiC silicon surface, first use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.
[0037] Step B, performing hydrogen etching on the 4H-SiC silicon surface.
[0038] Place the 4H-SiC silicon surface in a vacuum of 2.4×10 -6 mbar CVD furnace cavity, and feed hydrogen with a flow rate of 90l / min, when the temperature rises to 1450°C, then feed propane with a flow rate of 10ml / min, heat up to 1600°C, pressure 96mbar, keep for 15 minutes, and then cool down to room temperature Finally, take it out to remove surface scratches and form regular ste...
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