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Device for measuring object stress by utilizing graphene membrane, and preparation method and testing method of device

A graphene film and graphene technology, which can be used in measurement devices, measurement of elastic deformation force by measuring gauges, and optical devices, etc., can solve problems such as complicated processes and limited structures to be measured, and achieve easy operation and adaptability. Strong and simple structure

Active Publication Date: 2014-03-12
西安超宇微晶新材料技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Other traditional strain or pressure sensors based on electronic properties, for example, the Chinese patent titled "High Impedance Piezoelectric Sensor" with application number: 200810119208.X; The Chinese patent of: 200710109001.X; the invention name is "Metal Strain Gauge Strain Sensor", and the application number is: 200510078142.0. The Chinese patents all need to prepare electrodes and leads, the process is complex, and the structure to be tested is limited

Method used

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  • Device for measuring object stress by utilizing graphene membrane, and preparation method and testing method of device
  • Device for measuring object stress by utilizing graphene membrane, and preparation method and testing method of device
  • Device for measuring object stress by utilizing graphene membrane, and preparation method and testing method of device

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preparation example Construction

[0039] The present invention also proposes a method for preparing a device utilizing a graphene film to measure the stress of an object, comprising the following steps:

[0040] 1) Use chemical vapor deposition method or plasma-assisted chemical vapor deposition method to grow single-layer or double-layer graphene on the surface of copper foil with a thickness of 10-30 μm, wherein the purity of copper foil is more than 99%; use chemical vapor deposition method When depositing graphene, the copper foil was heated at 1000 °C in H 2 Keep in the atmosphere for 20-30min, then pass CH 4 and H 2 mixed gas, CH 4 The flow rate is controlled at 10~30sccm, H 2 The flow rate is controlled at 40 ~ 100sccm; then after keeping at 1000°C for 10min, first close the CH 4 , at H 2 Under the atmosphere, the temperature is lowered to 25°C at a rate of 1°C / s to prepare single-layer or double-layer graphene.

[0041] 2) Spin-coat PMMA, PDMS, PVDC or PET on the surface of graphene, and then use...

Embodiment 1

[0045] 1) Chemical vapor deposition method (CVD) to grow single-layer or double-layer graphene: the substrate is a strip of copper foil of 25 μm (thickness) × 10 mm (width) × 50 mm (length), with a purity of 99.8%; 2 Keep at 1000°C for 20min under the atmosphere. Then, pass into CH 4 and H 2 mixed gas, CH 4 The flow rate is controlled at 15sccm, H 2 The flow control is at 40sccm, 1000°C for 10 minutes, then close the CH 4 , at H 2 Under the atmosphere, the temperature is cooled to 25°C at a rate of 1°C / s to obtain single-layer or double-layer graphene.

[0046] 2) Spin-coat 200nm-thick SU8 photoresist (SU82000.5MicroChem) on the copper foil cut from step 1) with a size of 5mm×25mm, then spin-coat a layer of PMMA, dry and place in 0.3mol / L and FeCl with a small amount of dilute hydrochloric acid 3 About 3 hours in the aqueous solution, until the copper foil is completely dissolved, and the graphene / PMMA film layer is obtained, which floats on the surface of the solution...

Embodiment 2

[0049] 1) Chemical vapor deposition method (CVD) to grow single-layer or double-layer graphene: the substrate is a strip of copper foil of 25 μm (thickness) × 10 mm (width) × 50 mm (length), with a purity of 99.8%; 2 Keep at 1000°C for 20min under the atmosphere. Then, pass into CH 4 and H 2 mixed gas, CH 4 The flow rate is controlled at 15sccm, H 2 The flow control is at 40sccm, 1000°C for 10 minutes, then close the CH 4 , at H 2 Under the atmosphere, the temperature is cooled to 25°C at a rate of 1°C / s to obtain single-layer or double-layer graphene.

[0050] 2) Spin-coat 200nm-thick SU8 photoresist (SU82000.5MicroChem) on the copper foil cut from step 1) with a size of 5mm×25mm, then spin-coat a layer of PMMA, dry and place in 0.3mol / L and FeCl with a small amount of dilute hydrochloric acid 3 About 3 hours in the aqueous solution, until the copper foil is completely dissolved, and the graphene / PMMA film layer is obtained, which floats on the surface of the solution...

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Abstract

The invention discloses a device for measuring object stress by utilizing a graphene membrane, and a preparation method and a testing method of the device. The testing method is characterized in that graphene is arranged on a flexible stretchable substrate by utilizing a growth and transfer technology of the graphene and is tightly adhered to the surface of a to-be-measured object or a single crystal silicon substrate which is provided with a through hole, a characteristic peak of a Raman spectrum of the graphene can be subjected to shifting and splitting when the to-be-measured object is subjected to deformation or gas pressure difference exists between the internal part and the external part of the through hole, and sensing on strain or gas pressure can be realized basing on shifting and splitting amount of the characteristic peak. According to the device, the preparation method and the testing method, disclosed by the invention, the technical design is simple, the performance is stable, non-contact with the to-be-measured object is realized, and the complexity of an electrical measurement method which is in need of arranging leading wires can be avoided; the strain loading range is large, and the stress measurement accuracy degree is high.

Description

technical field [0001] The invention belongs to the field of stress testing, and in particular relates to a device for measuring the stress of an object by using a graphene film, a preparation method and a testing method. Background technique [0002] Graphene combines a variety of excellent properties, and its electron mobility is as high as 200,000 cm 2 / Vs, the light transmittance is as high as 97.7%, and the thermal conductivity is as high as 5300W / (m·K). In particular, its recoverable strain value exceeds 10%, and if it is loaded along the armchair direction, the recoverable strain value due to lattice shear deformation is even as high as 30%, which is much larger than that of single crystal silicon and metal material systems, which means that it can perceive The greater the strain, the more severe the deformation. It is not difficult to imagine that for graphene with a thickness of only a single atomic layer, the external load deformation is very easy to transfer fro...

Claims

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Application Information

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IPC IPC(8): G01L1/04G01B11/16C23C16/26
Inventor 马飞连璐徐可为马大衍
Owner 西安超宇微晶新材料技术有限公司
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