On-line measurement method and device for micro/nano deep trench structure

A measurement method and deep trench technology, which are applied in measurement devices, optical devices, semiconductor/solid-state device testing/measurement, etc., can solve the problems of precision installation, debugging and calibration, and the inability to meet the requirements of rapid extraction.

Active Publication Date: 2009-03-25
HUAZHONG UNIV OF SCI & TECH
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AI Technical Summary

Problems solved by technology

However, this parameter extraction method cannot meet the requirements of fast extraction of online measurements within seconds
The implementation device proposed in this method adopts a sophisticated

Method used

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  • On-line measurement method and device for micro/nano deep trench structure
  • On-line measurement method and device for micro/nano deep trench structure
  • On-line measurement method and device for micro/nano deep trench structure

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Embodiment Construction

[0034] Taking the measurement process of the inclined wall deep groove structure as an example, the principle and working process of the method of the present invention will be further described in detail in conjunction with the accompanying drawings:

[0035] (1) Project the infrared beam onto the surface of the object to be tested that contains the deep groove structure, the wavelength of the infrared beam is in the mid-infrared wavelength range, and the wavelength is 2-20um;

[0036] (2) After the incident light beam is reflected by each surface of the groove structure, an infrared detector is used to receive each reflected signal, and an interference signal containing the geometric information of the groove is obtained;

[0037] Such as figure 1 As shown, the infrared beam emitted by the infrared light source 1 is polarized by the infrared polarizer 2 to obtain linearly polarized light, and the linearly polarized light enters the interferometer 3, modulated by the interfer...

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Abstract

The invention discloses an online measuring method and an online measuring device for a micro-nano deep groove structure. The method comprises the following steps: linearly polarized infrared beams are projected to the surface of a sample piece which is provided with the deep groove structure, and measured reflection spectra are obtained after interference signals which are formed by reflected light on various interfaces of the groove structure are subjected to filtration and so on; an equivalent optical model of the deep groove structure is established by the polarization-based equivalent medium theory, and theoretic reflection spectra of the equivalent optical model of the deep groove structure are calculated; and the width and the depth of the groove are quickly extracted by the quick parameter extraction method of combination of an artificial neural network and a local search algorithm and through fitting of the theoretic reflection spectra and the measured reflection spectra, and precise online measurement of geometrical shape parameters of the deep groove is realized. The device comprises an infrared source, an infrared polaroid sheet, an interferometer, a plane mirror, two off-axis parabolic mirrors and an infrared detector. The device can realize online measurement of the depth and the width of the deep groove structure with high depth-width ratio in a field effect tube and a dynamic RAM during the manufacturing procedure, and has the characteristics of nondestructiveness, quickness and low cost.

Description

technical field [0001] The invention belongs to integrated circuit (IC) and microelectromechanical system (MEMS) device measurement technology, in particular to micro-nano deep groove structure online measurement method and device, the method is especially suitable for field effect transistors (MOSFETs) and dynamic random access memory (DRAM) ) On-line measurement of depth and width during the processing of medium-deep groove structures. Background technique [0002] In the design and manufacturing process of microelectronics and power semiconductor devices, dense three-dimensional structure arrays are widely used at present, such as depositing one or more layers of thin film structures on the silicon wafer substrate, and then etching line groove arrays on the substrate , circular holes or other shapes of trench arrays, and then backfill the trench structure with filling material, and repeat the above etching and filling steps to form a complex trench array structure. Durin...

Claims

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Application Information

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IPC IPC(8): G01B11/22G01B11/02H01L21/66
Inventor 刘世元张传维史铁林
Owner HUAZHONG UNIV OF SCI & TECH
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