Method for forming nitrogen and sulfur co-doped graphene quantum dots
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- BEIJING XINNA INT NEW MATERIALS TECH CO LTD
- Publication Date
- 2015-07-29
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Abstract
Description
technical field
[0001] The invention relates to a method for preparing graphene quantum dots, in particular to an element-doped graphene quantum dot. The graphene quantum dots are co-doped with nitrogen and sulfur, and the above-mentioned co-doping elements introduce a new type and high-density surface state graphene quantum dots, so that the graphene quantum dots have high yield and excitation-independent characteristics. Background technique
[0002] Quantum dots (QDs) are nanoparticles with size effect and optoelectronic properties, which are used in applications such as energy-saving displays and lighting tools, photovoltaic devices and biomarkers. Compared with other fluorescent (FL) materials (traditional dyes or polymers), quantum dots have many advantages, such as strong fluorescence, high photostability, and resistance to biological metabolic degradation.
[0003] However, most high-performance quantum dots are limited by the toxicity of heavy metal elements such a...