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Silver-doped copper zinc tin sulfur selenium light absorption layer film material and application thereof in solar cell

A copper-zinc-tin-sulfur-selenium, solar cell technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as narrow pure phase stable region, achieve the effect of less solvent usage, low requirements, and improved quality

Active Publication Date: 2017-01-04
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The pure phase stable region in the CZTS quaternary system phase diagram is very narrow, and binary and ternary impurity phases are easily formed if it deviates from this region. Therefore, it is generally accepted experimentally that the elemental composition of poor copper and rich zinc (Cu / Zn+Sn»0.8 ; Zn / Sn»1.2) can effectively control the generation of copper-based impurity phases while improving the p-type conductivity of the film, but the formation of impurity phases is difficult to avoid under non-stoichiometric conditions

Method used

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  • Silver-doped copper zinc tin sulfur selenium light absorption layer film material and application thereof in solar cell
  • Silver-doped copper zinc tin sulfur selenium light absorption layer film material and application thereof in solar cell
  • Silver-doped copper zinc tin sulfur selenium light absorption layer film material and application thereof in solar cell

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Experimental program
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Effect test

Embodiment 1

[0034] (1) Add 0.1 mol / L copper acetate, 0.05 mol / L anhydrous stannous chloride, 0.06 mol / L zinc acetate and 2 mol / L thiourea to 20 mL dimethyl sulfoxide (DMSO), stir until completely dissolved to form a transparent and clear CZTS precursor solution; (2) Spin-coat the CZTS sol precursor onto the cleaned molybdenum-coated glass substrate with a homogenizer, then dry it on a heating plate at 400°C for 5 minutes, and spin-coat repeatedly 11 times; (3) After the spin coating is completed, the sample is placed in a rapid heating furnace for selenization at 550 °C for 10 minutes, the heating rate is 10 °C / s, and the temperature is naturally lowered. During the annealing process, the protective gas N 2 , with a flow rate of 15 mL / min, an undoped ACZTSSe film with a thickness of about 1.5 μm can be obtained (as shown in the attached figure 1shown). (4) Chemical bath deposition of CdS buffer layer (~30 nm) at 65 ℃. (5) The intrinsic ZnO window layer (~30 nm) was prepared by radio fre...

Embodiment 2

[0037] (1) Add 0.095 mol / L copper acetate, 0.005 mol / L silver nitrate, 0.05 mol / L anhydrous stannous chloride, 0.06 mol / L zinc acetate and 2 mol / L thiourea to 20 mL DMSO, stir until completely dissolved to form a silver-doped CZTS solution; (2) Spin-coat the ACZTS sol precursor onto the cleaned molybdenum-coated glass substrate using a homogenizer, then dry it on a heating plate at 400 °C for 5 minutes, and spin-coat repeatedly for 11 (3) After the spin coating is completed, the sample is placed in a rapid heating furnace for selenization at 550 °C for 10 minutes, the heating rate is 10 °C / s, and the temperature is naturally lowered. During the annealing process, the protective gas N 2 , with a flow rate of 15mL / min, an ACZTSSe film with a thickness of about 1.5 μm can be obtained. (4) Chemical bath deposition of CdS buffer layer (~30 nm) at 65 ℃. (5) The intrinsic ZnO window layer (~30 nm) was prepared by radio frequency magnetron sputtering. (6) DC magnetron sputtering ITO...

Embodiment 3

[0040] (1) Add 0.085 mol / L copper acetate, 0.015 mol / L silver nitrate, 0.05 mol / L anhydrous stannous chloride, 0.06 mol / L zinc acetate and 2 mol / L thiourea to 20 mL DMSO, Stir until completely dissolved to form a silver-doped CZTS solution; (2) Spin-coat the ACZTS sol precursor onto the cleaned molybdenum-coated glass substrate using a homogenizer, then dry it on a heating plate at 400 °C for 5 minutes, and spin-coat repeatedly 11 times; (3) After the spin coating is completed, the sample is placed in a rapid heating furnace for selenization at 550 °C for 10 minutes, the heating rate is 10 °C / s, and the temperature is naturally lowered. During the annealing process, the protective gas N 2 , with a flow rate of 15mL / min, an ACZTSSe film with a thickness of about 1.5 μm can be obtained. figure 1 shown). (4) Chemical bath deposition of CdS buffer layer (~30 nm) at 65 ℃. (5) The intrinsic ZnO window layer (~30 nm) was prepared by radio frequency magnetron sputtering. (6) DC mag...

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Abstract

The invention discloses a silver-doped copper zinc tin sulfur selenium light absorption layer film material. The film material is prepared by virtue of the following method: (1) adding 0.07 to 0.13 mol / L of metal copper salt and metal silver salt into an organic solvent, stirring until the metal copper salt and the metal silver salt are completely dissolved, adding 0.03 to 0.07 mol / L of metal tin salt, further stirring until the metal tin salt is dissolved, then adding 0.03 to 0.09 mol / L of metal zinc salt, stirring until the metal zinc salt is completely dissolved, finally adding 2 mol / L of sulfur-containing compound, and stirring until the sulfur-containing compound is completely dissolved to form a stable ACZTS precursor solution; (2) ultrasonically cleaning molybdenum plated glass successively with acetone, absolute ethyl alcohol and deionized water; (3) spin-coating the molybdenum plated glass substrate with the precursor solution, and repeatedly spin-coating and depositing; and (4) after the spin coating is completed, selenizing the sample. The invention also discloses an application of the film material in a solar cell. By doping Ag, the quality of the film can be improved, an open-circuit voltage, a packing factor and photovoltaic conversion efficiency of a device are effectively increased, and the experimental repeatability and stability are also good.

Description

technical field [0001] The invention relates to a silver-doped copper-zinc-tin-sulfur-selenium light-absorbing layer thin film material and its application in solar cells, belonging to the technical field of thin-film solar cells. Background technique [0002] Benefited from cost and technical advantages, CdTe, Cu(In,Ga)Se 2 (CIGS) represented by compound thin film solar cells has maintained a strong momentum of development in recent years. However, mainstream thin-film solar cells such as CIGS and CdTe are constrained by factors such as scarcity of raw materials (In, Te) and toxic constituent elements (Cd) in the future TW scale production. Compared with the above material systems, Cu 2 ZnSnS 4 The constituent elements of (CZTS) are more abundant in the earth's crust and are environmentally friendly. The stable phase structure of CZTS compound is kesterite structure, which has an ideal direct band gap value. If the S part in it is replaced by Se to form Cu 2 ZnSn(SSe) ...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/18
CPCH01L31/0327H01L31/18Y02E10/50Y02P70/50
Inventor 韩修训赵雲李文李健
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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