Multi-level hole TiO2/quantum dot/dye lamination thin-film solar cell photo-anode and preparation method thereof

A technology of solar cells and quantum dots, applied in photosensitive devices, circuits, capacitors, etc., can solve the problems of low efficiency of sensitized solar cells, achieve the effects of broadening the spectral response range, facilitating electron transmission, and high light absorption coefficient

Active Publication Date: 2014-02-05
SHIJIAZHUANG TIEDAO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although I-II-Vi semiconductors have high conversion efficiency in thin-film solar cells (P.Jackson et al., M.Prog.Photovolt: Res.Appl.2011, 19, 894), the ternary chalcogen The efficiency of sensitized solar cells with compound as a single sensitizer is still relatively low, and current research mainly focuses on co-sensitization with other types of narrow-bandgap semiconductors.

Method used

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  • Multi-level hole TiO2/quantum dot/dye lamination thin-film solar cell photo-anode and preparation method thereof

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Embodiment 1

[0025] (1) Hierarchical Porous TiO 2 Preparation of semiconductor powder Add F127 to absolute ethanol (EtOH), stir until the solution is clear, then add TiCl dropwise 4 Continue to stir, the molar ratio of raw materials is F127:EtOH:TiCl 4 =1:3397:76, the stirring temperature is 40°C, then put the obtained precursor into a hydrothermal kettle and heat it at 160°C for 16 hours; after filtering and drying, it is heat-treated and kept at 300°C for 90 minutes. Heat at 500°C for 240 minutes, heat at 610°C for 10 minutes, and anneal. Add the prepared titanium dioxide powder into the dilute nitric acid solution with a mass ratio of 1:20, stir at 80°C for 10 hours, and then rotary evaporate to dryness at 90-100°C. (2) Hierarchical Porous TiO 2 The preparation of semiconductor thin film will the nano-TiO prepared by the above-mentioned hydrothermal method 2 The powder was added to EtOH and H 2 In the mixed solution of O (volume ratio 3:1), stir for 30 minutes; then add polyethylen...

Embodiment 2

[0027] (1) Hierarchical Porous TiO 2 The preparation of the semiconductor layer is as in Example 1. (2) Prepare quantum dots and sensitize TiO 2 Thin film: TiO 2 Substrates were sequentially immersed in InCl 3 Aqueous solution (0.1mol / L), Na 2 S aqueous solution (1mol / L), CuCl 2 Aqueous solution (0.1mol / L), the immersion time is 60s, 120s, 60s respectively, before each immersion, the TiO 2 The substrate was rinsed with deionized water, cycled 8 times, dried and then roasted. The roasting method was 30min and 60min at 300°C and 500°C, respectively, and the heating rate was 2°C / min. Hierarchical TiO 2 / Quantum dot film is prepared by dipping and pulling film method to prepare a layer of In 2 S 3 Thin film: TiO with quantum dots will be prepared 2 The films were sequentially immersed in InCl 3 Aqueous solution (0.01-1mol / L), Na 2 S aqueous solution (0.01-1mol / L), the immersion time is 5-300s, it is rinsed with deionized water before each immersion, cycled 1-50 times, a...

Embodiment 3

[0028] Hierarchical Porous TiO 2 The preparation of semiconductor layer is the same as embodiment 1, quantum dot sensitized TiO 2 The film is as in Example 3, but without dye adsorption, the photoelectric conversion efficiency of the assembled cell is 1.14×10 -3 %, the open circuit voltage is 0.042V, and the short circuit current density is 9.5×10 -S mA / cm 2 . Example 4

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Abstract

The invention discloses a multi-level hole TiO2/quantum dot/dye lamination thin-film solar cell photo-anode. A bottom layer is a multi-level hole TiO2 thin film prepared on a transparent conductive substrate. A middle layer is an I-III-VI-group quantum dot thin film. A secondary upper layer is a semiconductor oxide barrier layer. An upmost layer is a dye layer. The invention further discloses a preparation method of the multi-level hole TiO2/quantum dot/dye lamination thin-film solar cell photo-anode. The method comprises the steps of firstly, preparing the bottom layer, namely the multi-level hole TiO2 thin film, on the conductive substrate, then, preparing the I-III-VI-group quantum dot thin film, namely the middle layer thin film, on the multi-level hole TiO2 thin film by means of the chemical sedimentation method or the continuous ionic adsorption method, then preparing the secondary upper layer, namely the semiconductor oxide barrier layer, on the middle layer, namely the I-III-VI-group quantum dot thin film, by means of the dipping film-drawing method, and finally soaking the lamination layers in a dye solution to obtain the upmost layer, namely the dye layer. Compared with the prior art, the multi-level hole TiO2/quantum dot/dye lamination thin-film solar cell photo-anode is of the multi-level hole structure, and has the high specific surface area, dispersion and adsorption of dye and an electrolyte are facilitated, sunlight of different spectra is absorbed due to the synergistic effect of the lamination structure, the absorption spectrum range is broadened, and the photovoltaic conversion efficiency of a solar cell is improved.

Description

technical field [0001] The invention belongs to the field of solar cell photoanode preparation and relates to a kind of hierarchical porous TiO 2 / Quantum dots / Dye stacked thin film solar cell photoanode and its preparation method. Background technique [0002] With the increasingly serious problems of environmental pollution and energy crisis, people are increasingly urgent to develop and utilize renewable energy. dye-sensitized solar cells Professor (M et al., Nature, 1991, 353, 737) made a breakthrough in 1991, just because of its abundant raw materials, low cost, and advantages such as simple process, it has been widely concerned and valued. [0003] The composition of a sensitized solar cell mainly includes the following parts: a photoanode with photosensitization, a sealing material, an electrolyte and a counter electrode placed opposite to the photoanode. Among them, the photoanode with photosensitivity plays a decisive role in the efficiency of the battery, an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/042H01G9/048H01G9/20
Inventor 赵晋津汪文娜任书霞张江宾杜晓妍李腾坤
Owner SHIJIAZHUANG TIEDAO UNIV
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