Method for producing air bridge of compound semiconductor microwave high power device

A technology of high-power devices and manufacturing methods, applied in the field of microelectronics, can solve the problems of small protrusion in the vertical vertical plane, increase the thickness of the photoresist, and shrink the photoresist laterally, so as to ensure reliability, reduce difficulty, and arch large arc effect

Inactive Publication Date: 2008-01-02
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology improves upon existing methods for creating an insulating material used inside electronic devices such as gas sensors. By adding this new type of material between layers of materials like metals instead of just one single element, we reduce difficulties during manufacturing processes while maintaining its strength at higher temperatures compared to previous designs. Additionally, there are technical benefits over current techniques where multiple elements were added together without affecting their functioning due to thermal expansion issues caused by differences in coefficients of linear expansion (CTE) across these components.

Problems solved by technology

Technological Problem: High Power Electronics Devices require reliable connections between different components like Groups III Fermi Semimetrics Group GWIII) Silicon Carbon Nitride Compound Passenger Jiao Interlayer Technology (SiCN), Galilayer Thin Film Technique (LGFT) Using Electrospacer Lifter Trusses (ESTM) Transducer Components (TMCCSIC) Antennas Overall, current methods for connecting electronic elements suffer limitations including complicated processes during manufacturings, reduced efficiency, limited applicational range, poor quality control, etc., resulting in decreased product yields and potential issues associated with insulation failure.

Method used

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  • Method for producing air bridge of compound semiconductor microwave high power device
  • Method for producing air bridge of compound semiconductor microwave high power device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] The substrate material chooses Si wafer as the substrate

[0058] In step 1, two kinds of adhesives are respectively coated on the Si substrate, and a bridge region and an electrode region are photoetched to form a sacrificial layer.

[0059] First, coat a layer of 1.5 μm thick peeling adhesive LOR5A on the Si substrate, bake in an oven at a temperature of 160°C for 20 minutes; then coat a layer of 1.5 μm thick photoresist EPI622, and bake at a temperature of 85°C for 10 minutes. The ratio of the stripping glue LOR5A and the photoresist EPI622 is 5:5; then use the first photolithography plate to make the air bridge to lithography the area of ​​the bridge, the bridge pier, that is, the electrode, and finally soak in the developer for 2 minutes, and blow dry with nitrogen , forming a 3 μm sacrificial layer, as shown in Figure 1.

[0060] Step 2, low-temperature baking, so that the sacrificial layer in the bridge area forms an arched structure.

[0061] Bake the substrat...

Embodiment 2

[0079] The invention manufactures the air bridge device structure on the microwave high-power GaN HEMT substrate based on the source, drain contact and Schottky contact, that is, the air bridge device structure on the microwave high-power gallium nitride high electron mobility transistor substrate .

[0080] In step 1, two kinds of adhesives are respectively coated on the GaN substrate, and the bridge region and the electrode region are photoetched to form a sacrificial layer.

[0081] Firstly, coat a layer of 1.5μm thick stripping adhesive LOR5A on the GaN substrate, and bake it in an oven at 160°C for 20min; then coat a layer of 2.0μm thick photoresist EPI622, and bake it at 85°C for 10min , the ratio of the stripper LOR5A to the photoresist EPI622 is 3:4;

[0082] Then use the first photolithography plate for making the air bridge to lithographically cut out the area of ​​the bridge, pier, or electrode, and finally soak in the developer solution for 2 minutes, and blow dry...

Embodiment 3

[0102] The substrate material is GaN as the substrate.

[0103] In step 1, two kinds of adhesives are respectively coated on the GaN substrate, and the bridge region and the electrode region are photoetched to form a sacrificial layer.

[0104]First, coat a layer of 1.0 μm thick peeling adhesive LOR5A on the GaN substrate, and bake it in an oven at a temperature of 160°C for 20 minutes; then coat a layer of 1.5 μm thick photoresist EPI622, and bake it at a temperature of 85°C for 10 minutes. The ratio of stripping glue LOR5A and photoresist EPI622 is 2:3; then use the first photolithography plate for making air bridges to photoetch out the area of ​​bridges, piers, or electrodes, and finally soak in the developer for 2 minutes, and blow dry with nitrogen , forming a 2.5 μm sacrificial layer, as shown in Figure 1.

[0105] Step 2, low-temperature baking, so that the sacrificial layer in the bridge area forms an arched structure.

[0106] Bake the substrate on which the sacrif...

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Abstract

The invention discloses an air bridge production method of compound semi-conductive microwave large powder device, mainly for resolving the problems of prior art which air bridge has low arch height, narrow width, and low reliability. And the production comprises that respectively coating remove adhesive and photo-etching adhesive with different pre-bake temperatures on a substrate, and etching a bridge area and an electrode area, to form a sacrificial layer, then baking the substrate at 135-145Deg. C for 15-25min, to form the sacrificial layer into arch structure, depositing a plating start layer at 80-100nm on the sacrificial layer, coating a photo-etching adhesive on the plating start layer, etching a bridge area and an electrode area, then in non-cyanide plating liquid, using plating method, to plate an Au layer on the etched bridge area and electrode area, at least, removing the mask photo-etching adhesive, removing Au and Ti of the plating start layer, removing the sacrificial layer, to obtain an arch air bridge. The invention has the advantages with high arch height, wide width, and high reliability.

Description

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Claims

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Application Information

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Owner XIDIAN UNIV
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