The invention discloses an air bridge production method of compound semi-conductive microwave large powder device, mainly for resolving the problems of prior art which air bridge has low arch height, narrow width, and low reliability. And the production comprises that respectively coating remove adhesive and photo-etching adhesive with different pre-bake temperatures on a substrate, and etching a bridge area and an electrode area, to form a sacrificial layer, then baking the substrate at 135-145Deg. C for 15-25min, to form the sacrificial layer into arch structure, depositing a plating start layer at 80-100nm on the sacrificial layer, coating a photo-etching adhesive on the plating start layer, etching a bridge area and an electrode area, then in non-cyanide plating liquid, using plating method, to plate an Au layer on the etched bridge area and electrode area, at least, removing the mask photo-etching adhesive, removing Au and Ti of the plating start layer, removing the sacrificial layer, to obtain an arch air bridge. The invention has the advantages with high arch height, wide width, and high reliability.