Terahertz low-frequency GaAs based high-power schottky frequency multiplication diode

Abstract

The invention discloses a terahertz low-frequency GaAs based high-power schottky frequency multiplication diode. The terahertz low-frequency GaAs based high-power schottky frequency multiplication diode comprises 40 schottky anode junctions and is of a four-row structure; each row structurally comprises 10 schottky junctions, and radio frequency concurrent parallel connection and direct-current reverse serial connection are adopted for each row of the structure; a semi-insulation GaAs substrate is adopted for the frequency multiplication diode, and is provided with a heavy doped GaAs layer and a passivation layer; the heavy doped GaAs layer is provided with a low-doped GaAs layer and an Ohm contact metal layer; the low-doped GaAs layer is provided with a schottky contact metal layer and a silicon dioxide layer; the Ohm contact metal layer is provided with a metal thickening layer which is connected with the schottky contact metal layer via an air bridge, so that the frequency multiplication diode can bear relatively high power input and is less prone to damage; the high-power schottky frequency multiplication diode is relatively high in application frequency; the manufacturing technology is compatible with existing technology; the high-power schottky frequency multiplication diode is high in practicability, and has the technical effects of being applied to secondary frequency multiplication and third-time frequency multiplication simultaneously.

Description

technical field [0001] The invention relates to the technical field of terahertz devices, in particular to a GaAs-based high-power Schottky frequency doubler diode used in the terahertz low frequency band. Background technique [0002] The broad frequency range of terahertz waves is 100GHz-10THz, where 1THz=1000GHz, THz waves occupy a very special position in the electromagnetic spectrum, and THz technology is recognized as a very important cross-frontier field by the international scientific and technological community. [0003] In the low-end range of THz frequency, the solid-state source is usually obtained by frequency doubling of semiconductor devices. This method is to double the frequency of the millimeter wave to the THz frequency band through a nonlinear semiconductor device, which has the advantages of compact structure, easy adjustment, long life, controllable waveform, and normal temperature operation; currently, the short-wavelength submillimeter wave and THz so...

AI Technical Summary

Problems solved by technology

[0007] The invention provides a GaAs-based high-power Schottky frequency multiplier diode used in the terahertz low-frequency band, which solves the problem that the existing Schottky diode is prone to breakage during the use process of high power, which leads to the failure of the device. Technical problems, realized that the frequency doubling diode can withstand large power input and is not easy to damage, the application frequency is high, the production process is compatible with the existing process, and the practicability is strong. It can be applied to the secondary frequency doubling or Technical Effects Applied to Triple Frequency Multiplication

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