Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same

Abstract

The present invention provides a material for an antireflective film characterized by high etching selectivity with respect to a resist, that is, which has a fast etching speed when compared to the resist, and in addition, can be removed without damage to a film which is to be processed. The present invention also provides a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film-forming composition, and a pattern formation method that uses this antireflective film as a hard mask, and a pattern formation method that uses this antireflective film as a hard mask for processing the substrate. The present invention provides an antireflective film-forming composition comprising an organic solvent, a cross linking agent, and a polymer comprising a light absorbing group obtained by hydrolyzing and condensing more than one type of silicon compound, a crosslinking group and a non-crosslinking group.

Description

1. FIELD OF THE INVENTION [0001] The present invention relates to effective intermediate layer forming materials that are effective for a multilayer resist process used in micro fabrication in the manufacturing of semiconductor devices or the like; resist pattern formation methods which employ these intermediate film forming materials and which methods are suited for exposure to far ultraviolet radiation, KrF excimer laser light, ArF excimer laser light (193 nm), F2 laser light (157 nm), Kr2 laser light (146 nm), Ar2 laser light (126 nm), soft X-rays, electron beams, ion beams, and X-rays; substrates; and in particular a masking layer used when processing an insulating film with a low dielectric constant. 2. DESCRIPTION OF THE RELATED ART [0002] In recent years, the increased integration and higher speeds of LSIs have resulted in a need for pattern rules to be made even finer. The fundamental resolution limit due to the wavelength of the light source in lithography using light expos...

AI Technical Summary

Benefits of technology

[0015] An object of the present invention is to provide a material for an antireflective film which has high etching selection ratio with respect to the resist performing a fast etching speed when compared to the resist, and which can form an excellent pattern in an upper resist layer due to the formation of a dense film by crosslinking of organic groups. Furthermore, it is to provide a processing method for a silicon-based low dielectric film, particularly one having dielectric constant of not more than 2.7 and having chemical and physical stabilities so that that the problems described above can be solved at once. The present invention provides a new silicon-based filling material, and a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film material, and a pattern formation method that uses this antireflective film as a hard mask for processing the substrate.

Problems solved by technology

However, because the precision of achromatic lenses or aspherical reflective optical systems was not adequate, the combination of narrow-band laser light and a refractive optical system became mainstream.

It has been well documented that in single wavelength exposure, typically there is interference between incident light and light reflected by the substrate, generating a stationary wave.

It is also known that the problem known as halation occurs as a result of light being focused or dispersed due to level differences in the substrate.

However, the method of adding a light-absorbing agent resulted in the problem that the resist pattern shape became tapered.

The problem of stationary waves and halation effecting fluctuations in pattern dimensions has become worse in conjunction with the shortening of wavelengths and the progress in providing greater fineness in recent years, and this could not be solved by the method of adding a light-absorbing agent.

An upper-layer transmission-type antireflective film in principle is effective only in reducing stationary waves, and is not effective for halation.

Thus, when patterning of 0.20 μm or less is attempted in KrF lithography, the combination of a light-absorbing agent and the upper-layer antireflective film alone cannot suppress the effects of stationary waves.

Even in the case of KrF, it will be necessary to provide an antireflective film below the resist due to difficult management of the line width caused by further future reductions in the line width.

Because the film is not easily stripped away, however, there is a limit as to when it can be employed.

However, since most light-absorbing agents have aromatic groups or double bonds, there is the shortcoming that addition of a light-absorbing agent may increase the dry etching resistance and that the dry etching selection ratio with respect to the resist may not be particularly high.

Fine processing techniques are becoming more advanced and there is a drive to make resist films thinner, and moreover, in next-generation ArF exposure, acrylic or alicyclic polymers will come to be employed as the resist material, and this will result in a drop in the etching resistance of the resist.

Etching is therefore a crucial issue, and there is a demand for antireflective films with a high etching selection ratio with respect to the resist, that is, with a fast etching speed.

However, in each of these silicon-containing polymers there was a problem with preservation stability, and there was the critical flaw that the film thickness fluctuates when the polymers are put into practical use.

Furthermore, resist pattern shapes on the films formed by crosslinking these spin-on-glass materials with siloxane are not perpendicular, and abnormalities occur such as tailing, reverse taper and film residue.

However, during oxygen-based etching processing the low dielectric silica-based film is more susceptible to damage.

Furthermore, it is difficult to obtain a high selective ratio when wet stripping, and either stripping is not possible, or if it is possible then shape control is problematic.

On the other hand, if an organic material based filling material is used, then when CF dry etching during the low dielectric film processing after the oxygen-based dry etching process, there is the problem that shape abnormalities can easily occur in the vicinity of the interface between the organic film and the low dielectric film.

However, it is more difficult to obtain excellent selectivity, particularly with dry etching, between silicon-based materials and insulating films that are silicon-based materials.

Even in wet stripping, excluding the case in which there is a large difference in the degree of condensation, it is not easy to obtain a high selection ratio.

Furthermore, problems occur such as intermixing in the upper layer of the resist pattern, or tailing in the cross-section if a material of a low degree of condensation is used so as to obtain the desired selective ratio.

In addition, the degree of condensation rises while passing through the etching or the baking process, so that it has been found that it is not possible to provide an etching selective ratio as high as might be expected.

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