Electrochemical processing method for micro-structure of P type silicon surface
A technology of electrochemical processing and microstructure, which is applied in the field of silicon surface processing, can solve the problems of difficult general application and slow processing speed, and achieve the effect of high replication accuracy, low processing cost, and good prospects for expansion
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Embodiment 1
[0030] figure 1 It is a schematic diagram for preparing an agarose gel template in Example 1 of the present invention. figure 1 a is the thermoplastic replication process, first mix agarose powder and ultrapure water in a mass ratio of 1: (8-1): 12, heat and dissolve, and quickly cast it on the surface of the original master plate 1 with a microstructure, under vacuum conditions After removing air bubbles and cooling for 2 hours, agarose gel 2 was formed, and the two were peeled off carefully ( figure 1 b) The agarose gel template 3 having a structure completely complementary to the original master template 1 is obtained. The prepared agarose gel template 3 is generally about 2 cm long x 2 cm wide x 1 cm high. The original master 1 with microstructure can be titanium, quartz or silicon wafer with microstructure. The substrate needs to be pretreated before the experiment. Quartz and titanium only need to be ultrasonicated in acetone for 5 minutes, and then cleaned with ultrap...
Embodiment 2
[0035] Figure 5 Micrographs and three-dimensional topography photos of the silicon surface microstructure array processed in Example 2 of the present invention are given. The electrolyte stored in the agarose gel template during processing is 0.8mol / L hydrofluoric acid, the etching potential is 1.5V vs. SCE (saturated calomel electrode), and the processing time is 4h. The average depth of the etched pattern is 11 μm, and the etching processing speed is about 2.75 μm / h.
Embodiment 3~40
[0037] Its process steps are similar to the above-mentioned examples, and its difference lies in the concentration of hydrofluoric acid stored in the agarose gel template, and the potential of electrochemical polishing, and the specific conditions and its etching processing effect are shown in Table 1 (wherein "+" Indicates that the etching processing effect is good, "-" indicates that the etching processing effect is poor).
[0038] Table 1
[0039]
[0040] 18
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