38results about How to "High copying accuracy" patented technology

The invention relates to a method for preparing a micron / nanometer optical element on GaAs and a micron / nanometer optical element thereof, in particular to a preparation method in which the micron / nanometer optical array element is directly etched on the surface of semiconductor GaAs material at one time with low cost, simple method and no complex processes such as mask lithography and so on. The quartz with the micron / nanometer optical array element is taken as an original mother blank; a relief structure on the quartz micron / nanometer optical array element is accurately replicated on the surface of polymer material and then a Ti layer and a Pt layer are sputtered in sequence; the surface is then metallized to obtain a template electrode. The template electrode is used as a working electrode and is adjusted to be parallel to a processed workpiece GaAs; an electrochemical etching solution is added into an electrolytic cell and an etching agent is generated on the template electrode; a restraint agent in the etching solution is used for compressing the thickness of an etching agent layer to the thickness of a micron or a nanometer level; GaAs sheets are controlled to move to the surface of the template electrode until the structure on the template electrode is completely replicated on the surface of the processed workpiece and the separation of the GaAs sheets and the template electrode is controlled.

The invention provides an electro-chemical processing method of a P-typed silicon surface micro-structure, relating to the processing of silicon surface. The invention provides a novel electro-chemical processing method which has low cost and simple processing steps, does not have complex processes such as mask lithography, etc., and with micro-structure etched and is processed on the surface of the P-typed silicon in one-step. The electro-chemical processing method comprises the steps that: the micro-structure on an original mother blank is transferred onto a gelose surface and then dipped in electrolyte, so as to gain the gelose gel template with the stored electrolyte; the gelose gel template is then arranged in an electrolytic cell, the micro-structure part of which is exposed on the liquid surface; a Pt layer is splashed on the back surface by the P-typed silicon through a front disposal to form an ohm contact; a polished surface is then arranged on the surface of the gelose gel template; the P-typed silicon sheet is taken as a working electrode and the electro-chemical polishing micro-processing is carried out to the P-typed silicon sheet; the micro-structure on the gelose gel template is transferred on the surface of the P-typed silicon by the electro-chemical polishing micro-processing to gain the P-typed silicon sheet with the micro-structure and the P-typed silicon sheet with the micro-structure is separated from the gelose.

The invention provides an operational amplifier. The operational amplifier comprises a current mirror circuit, a first differential transistor, a second differential transistor, a second current source, a third current source and a third MOS transistor. The mismatch of current mirror current replication of the current mirror circuit is very small, and the current mirror replication accuracy is high, therefore, the control accuracy of the operational amplifier is improved.

The invention provides a current mirror circuit which comprises a first MOS tube, a second MOS tube, a first resistor, a second resistor, a first adjustable resistor, a second adjustable resistor, a switch circuit and a calibrating circuit. The calibrating circuit controls a first switch to be on first and then controls a second switch and a third switch to be off; at the moment, the calibrating circuit samples and compares the voltage at the other end of the first resistor with that of the other end of the second resistor; when the first sampling voltage is greater than the second sampling voltage, the calibrating circuit adjusts the first regulatable resistor to a first effective resistance value and controls the second switch of the switch circuit to be on and the first switch and the third switch to be off; when the first sampling voltage is lower than the second sampling voltage, the calibrating circuit adjusts the second adjustable resistor to a second effective resistance value,and controls the third switch of the switch circuit to be on and the first and second switches to be off. Compared with the prior art, mismatch of current copy of the current mirror can be reduced, and the copy precision of the current mirror can be increased.

A light-transmitting object examining method enables an accurate examination whether optical nonuniformity is present or not inside a light-transmitting object. The light-transmitting object examining method examines whether nonuniformity (specifically an internal defect (16)) causing an optical characteristic to an exposure light to change locally or at local portion is present or not inside a light-transmitting object (4) that is made of a light-transmitting material and used for photolithography. An examining light having a wavelength of less than 200 nm is made to enter the light-transmitting object and a light (15) having a wavelength longer than that of the examining light and emitted locally or at a local portion is sensed in an optical path along which the examining light propagates inside the light-transmitting object, thus presence / absence of an optical nonuniformity of a light-transmitting object is examined.

The invention provides a voltage comparator. The voltage comparator comprises a current mirror circuit, a third resistor, a fourth resistor, a first bipolar transistor, a second bipolar transistor, asecond current source and a third MOS (Metal Oxide Semiconductor) transistor. The current mirror circuit has very small current mirror current duplication mismatch, and very high current duplication precision, so that the precision of an internal reference voltage threshold of the voltage comparator can be increased.

The invention provides an LED circuit, which includes: a current mirror circuit, an LED and a first current source. The current mirror circuit has very small mismatch of current mirror current replication and high current replication accuracy, which can improve the brightness control accuracy of LEDs in the LED circuit.

The invention belongs to the field related to preparation of holography anti-fake materials, and discloses a laser holography anti-fake film. The laser holography anti-fake film comprises a base film, a release layer, an information layer, a reflection layer and a hot melt adhesive layer laminated in sequence, wherein the information layer consists of such as substrates as epoxy resins and a lot of micro capsules dispersed in the substrates; capsule cores of the micro capsules consist of heating curing agents for generating a cross linking reaction with the epoxy resins in the mold pressing process to cure holography relief patterns; and capsule walls are used for stopping contact between the capsule cores and the substrates before mold pressing. The laser holography anti-fake film can effectively solve multiple defects in a thermoplastic holography anti-fake film; and a laser holography film product with nearly 100% of high-precision copy information, not influenced by the heat transfer working conditions, convenient to preserve for a long time and maintaining high-quality anti-fake function can be obtained.