Electrochemical processing method for micro-structure of P type silicon surface
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- XIAMEN UNIV
- Publication Date
- 2009-06-17
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The present invention relates to the processing of a silicon surface, in particular to an agarose gel template which can store electrolyte and have a microstructure combined with electrochemical polishing technology, and obtain a large-area microstructure on the p-type silicon surface by one-time replication processing A novel electrochemical machining method and its device. Background technique
[0002] Silicon has become the most important basic material in microelectronics and microsystem technology because of its excellent electronic properties, mechanical and chemical properties, and it is also the most profoundly understood material so far. At present, silicon has been widely used in the microelectronics industry, and is playing an increasingly important role in the development of microsystem technology (Wang Chunhai, Yu Jie, et al. Translated. Microsystem Technology. Beijing: Chemical Industry Press, 2003).
[0003] Silicon surface micromachini...