Method for preparing GaAs micro/nono optical element
A technology of optical elements and optical arrays, applied in optical elements, optics, microstructure technology, etc., can solve the problems of expensive and difficult, high processing costs, no low-cost micro/nano optical element processing methods, etc., and achieve high replication accuracy , The effect of low processing cost
Inactive Publication Date: 2008-08-06
XIAMEN UNIV
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The invention relates to a method for preparing a micron/nanometer optical element on GaAs and a micron/nanometer optical element thereof, in particular to a preparation method in which the micron/nanometer optical array element is directly etched on the surface of semiconductor GaAs material at one time with low cost, simple method and no complex processes such as mask lithography and so on. The quartz with the micron/nanometer optical array element is taken as an original mother blank; a relief structure on the quartz micron/nanometer optical array element is accurately replicated on the surface of polymer material and then a Ti layer and a Pt layer are sputtered in sequence; the surface is then metallized to obtain a template electrode. The template electrode is used as a working electrode and is adjusted to be parallel to a processed workpiece GaAs; an electrochemical etching solution is added into an electrolytic cell and an etching agent is generated on the template electrode; a restraint agent in the etching solution is used for compressing the thickness of an etching agent layer to the thickness of a micron or a nanometer level; GaAs sheets are controlled to move to the surface of the template electrode until the structure on the template electrode is completely replicated on the surface of the processed workpiece and the separation of the GaAs sheets and the template electrode is controlled.
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