TFT (thin film transistor) array substrate

Abstract

The invention provided a TFT (thin film transistor) array substrate, comprising a substrate (1) and a TFT, wherein the TFT comprises a gate electrode (2), a semiconductor layer (5), a source electrode (8) and a drain electrode (9), an adjacent layer of the semiconductor (5) is in a structure of a composite layer, the structure of the composite layer comprises a protective layer and an insulating layer, the protective layer can prevent the semiconductor layer (5) from losing oxygen, is made from an insulating material and is in contact with the semiconductor layer (5), and the insulating layer is made from an easily etching insulating material. The TFT array substrate can improve the stability of the TFT and is also suitable for large-batch production.

Description

technical field [0001] The invention belongs to the technical field of display manufacturing, and in particular relates to a TFT (Thin Film Transistor, thin film transistor technology) array substrate. Background technique [0002] With the development of display manufacturing technology, TFT-LCD (Thin Film Transistor Liquid Crystal Display) occupies a dominant position in the current flat panel display market due to its small size, low power consumption, and no radiation. [0003] The process of making a TFT array substrate in the prior art generally includes: sequentially depositing a gate metal film, a gate insulating film, a metal oxide film, a source-drain metal film, a passivation layer film, and a transparent conductive film on the substrate. Several photolithography processes sequentially form the patterns of the gate electrode, gate insulating layer, semiconductor layer, source electrode, drain electrode, passivation layer, and transparent pixel electrode. Etching ...

AI Technical Summary

Problems solved by technology

One side of the semiconductor layer is in contact with the etching barrier layer, and the other side is in contact with the gate insulating layer, wherein the etching barrier layer and the gate insulating layer are generally made of SiN x 、Al 2 o 3 or SiO x and other insulating materials, since the semiconductor layer is made of metal oxide materials, if the etch stop layer and the gate insulating layer are made of SiN x made, etch stop layer with gate insulating layer in SiN x It will capture the oxygen ions in the metal oxide that constitutes the semiconductor layer, causing the metal oxide in the semiconductor layer to lose oxygen, resulting in unstable performance of the TFT array substrate

[0005] In order to improve the stability of the TFT array substrate, the etch barrier layer and the gate insulating layer can also use Al 2 o 3 or SiO x made, but when dry etching is used, if Al 2 o 3 or SiO x To form the pattern of the etch barrier layer and the gate insulating layer, its etching rate is low, which is not conducive to mass production

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