Ethicng liquid composition, and method for preparing array substrate for use in liquid crystal display device

Abstract

The invention relates to an ethicng liquid composition, and a method for preparing an array substrate for use in a liquid crystal display device. The method comprises steps of forming grid wiring on a substrate, forming a grid insulation layer on the substrate containing the grid wiring, forming a semiconductor layer on the grid insulation layer, forming a source electrode and a drain electrode on the semiconductor layer, forming a pixel electrode connected with the drain electrode, and forming an electrode by etching films containing molybdenum metallic films or copper metallic films. A molybdenum alloy film is an alloy of niobium, tungsten or both with molybdenum. The ethicng liquid composition comprises, by weight percentage of total composition weight, 5.0%-25.0% of hydrogen peroxide, 0.01%-1.0% of fluorine compounds, 0.1%-5% of azole compounds, 0.1%-5.0% of water miscible compounds containing nitrogen atoms and carboxyl groups in a molecule, 0.1%-5.0% of phosphate compounds, 0.001%-5.0% of polyol surface active agents, and the balance of water. In addition, the ethicng liquid composition does not contain organic/inorganic acid or salt and cycloaliphatic amines

Description

technical field [0001] The present invention relates to a method for manufacturing an array substrate for a liquid crystal display device and an etchant composition for a multilayer film composed of a molybdenum alloy film of an alloy of one or more of niobium or tungsten and molybdenum and a copper-based metal film. Background technique [0002] Typical circuits for driving semiconductor devices and flat panel display devices are thin film transistors (TFT). In the manufacturing process of thin film transistors, a metal film is usually formed on the upper part of the substrate as a gate and data wiring material, and after forming a photoresist on a selective area of ​​the metal film, the photoresist is used as a mask to etch the metal film. [0003] Generally, a copper-containing copper film or a copper alloy film having good conductivity and low electrical resistance, and a metal oxide film having excellent adhesion to the surface of these films are used as gate and data ...

AI Technical Summary

Problems solved by technology

When the copper-molybdenum film is etched using the etching composition, a tapered profile with good linearity can be formed, but when the molybdenum-niobium (Mo-Nb) molybdenum-based metal film and the copper-based metal film are etched together , the etching speed becomes slower, and the molybdenum-niobium (Mo-Nb) molybdenum-based metal film cannot be etched or residues are generated, and the etching performance is extremely low.

Also, in Korean Laid-Open Patent Publication No. 10-2010-0035250, it is described that a composition including ammonium sulfate and cyclohexylamine must be included in hydrogen peroxide and the like, and when the composition is used to etch copper / molybdenum- Niobium (Mo-Nb) molybdenum-based metal film cannot achieve a sufficient etching rate for the copper film or molybdenum film, and the etching characteristics will also be severely reduced

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