Display panel, array substrate, thin film transistor and manufacturing method of thin film transistor

Abstract

The present invention relates to a manufacturing method of a thin film transistor, a thin film transistor, an array substrate, and a display panel. The manufacturing method includes the following steps that: a light shielding layer and a buffer layer covering the light shielding layer are formed on a substrate, and an active layer, a gate insulating material layer, and a gate material layer sequentially stacked on the buffer layer are also formed, the orthographic projection of the active layer on the substrate covers the orthographic projection of a portion of the light shielding layer on thesubstrate; a groove extending from the gate material layer into the buffer layer is formed, and the groove is opposite to a region of the light shielding layer which is not covered with the active layer; patterning is performed on the gate material layer, so that a gate is formed; patterning is performed on the gate insulating material layer, so that a gate insulating layer is formed; the bufferlayer at the bottom of the groove is removed, so that the light shielding layer can be exposed; a source and a drain are formed on a surface of the buffer layer, wherein the surface of the buffer layer is away from the substrate; a dielectric layer covering the gate and the buffer layer is formed; a first via hole exposing the light shielding layer is formed at a position of the dielectric layer which is corresponding to the groove, and a second via hole exposing the drain is also formed in the dielectric layer.

Description

technical field [0001] The present disclosure relates to the field of display technology, in particular, to a manufacturing method of a thin film transistor, a thin film transistor, an array substrate and a display panel. Background technique [0002] Currently, display panels are more and more widely used, especially OLED (Organic Light Emitting Diode) display panels have been widely used in various display devices. In existing display panels, thin film transistors are indispensable electronic devices. For example, top-gate thin film transistors, the buffer layer covers the light-shielding layer, and the active layer is set in the area of ​​the buffer layer corresponding to the light-shielding layer. When manufacturing thin-film transistors It is necessary to open a contact hole exposing the light-shielding layer to the stacked dielectric layer and buffer layer, and then connect the drain electrode to the light-shielding layer through the contact hole. [0003] However, th...

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Problems solved by technology

[0003] However, the thickness of the dielectric layer and the buffer layer is relatively large, and the thickness after stacking is even greater, so that the process of opening the contact hole for the stacked dielectric layer and buffer layer is relatively difficult, and it takes a long time. Etching will cause a very large loss of photoresist, and make the photoresist prone to denaturation, which will cause the photoresist to be peeled off in the removal process, resulting in photoresist residue, which will have a negative impact on the subsequent process. Lower panel yield and display quality

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