Patterning method of nitride ceramic copper-clad plate and nitride ceramic copper-clad plate

Abstract

The invention discloses a patterning method of a nitride ceramic copper-clad plate and a nitride ceramic copper-clad plate. The patterning method comprises the following steps: arranging a patterned anti-corrosion layer on the surface of the nitride ceramic copper-clad plate, wherein the nitride ceramic copper-clad plate is formed by an active brazing method; performing first etching treatment on the nitride ceramic copper-clad plate by using a first etching solution, wherein the first etching solution comprises a CuCl<2> solution or a FeCl<3> solution; performing second etching treatment on the nitride ceramic copper-clad plate being subjected to the first etching treatment by using a second etching solution; and performing third etching treatment on the nitride ceramic copper-clad plate being subjected to the second etching treatment by using a third etching solution. The patterning method has the advantages of high etching efficiency, uniform etching and freeness from residues; the etching quality is improved; and a metal layer has a good plate surface state.

Description

technical field [0001] The invention relates to the technical field of semiconductor substrate preparation, in particular to a patterning method of a nitride ceramic copper clad laminate and a nitride ceramic copper clad laminate. Background technique [0002] High-power modules are widely used in electric locomotives, electric vehicles, photovoltaic solar energy and other fields. As power modules become more integrated and more powerful, the heat generated by semiconductor devices is on the rise. At present, the practice of forming a ceramic circuit board by joining a metal plate with good electrical and thermal conductivity to a ceramic sintered body substrate with good insulation and heat dissipation such as aluminum nitride has been widely popularized. Due to its good thermal conductivity, ceramic circuit boards are widely used as lining boards of power modules to solve the heat dissipation problem of semiconductor devices. [0003] So far, there are two main methods o...

AI Technical Summary

Problems solved by technology

In the actual process, it is found that the fluoride ion etching solution such as the mixture of hydrofluoric acid and nitric acid has problems such as slow etching rate and incomplete etching, and the etching solution bites the surface of the metal plate, making the state of the metal plate surface poor

The hydrogen peroxide system etching solution also has the problem of incomplete etching and difficult removal of residues after etching

Hydrogen peroxide is easy to decompose and has poor stability. In order to improve the stability of etching solution, it is necessary to add stabilizers and etching selectors, which can improve the stability of hydrogen peroxide etching solution, but at the same time, the etching ability of etching solution for other metals is reduced, and it is more likely to occur The problem of incomplete etching and difficult removal of residues

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