271 results about "Ion sensitive" patented technology

Specific ionic interactions with a sensing material that is electrically coupled with the floating gate of a floating gate-based ion sensitive field effect transistor (FGISFET) may be used to sense a target material. For example, an FGISFET can use (e.g., previously demonstrated) ionic interaction-based sensing techniques with the floating gate of floating gate field effect transistors. The floating gate can serves as a probe and an interface to convert chemical and / or biological signals to electrical signals, which can be measured by monitoring the change in the device's threshold voltage, VT.

The surface of a semiconductor substrate (1) comprises an input diode section (2) and a floating diffusion section (3) consisting of a diffusion region reverse to the substrate in conductivity type, an input gate (6) and an output gate (7) fixed on an insulation film (5) extending from an input diode section to a floating diffusion section, a sensing section (9) consisting of an ion sensitive film fixed on the insulation film extending from the input.

A sensing apparatus comprising an ion sensitive field effect transistor arranged to generate an electrical output signal in response to localized fluctuations of ionic charge at or adjacent the surface of the transistor, and means for detecting the electrical output signal from the ion sensitive field effect transistor, the localized fluctuations of ionic charge indicating events occurring during a chemical reaction.

Use of a pH sensor comprising an ion-sensitive field effect transistor (ISFET) to perform real time detection / quantification of nucleic acid amplification, e.g. polymerase chain reaction (PCR) nucleic acid amplification, based on detection of protons released during the primer extension phase.

A method of observing reaction intermediaries during a chemical reaction and comprising detecting an electrical signal output from an ion sensitive field effect transistor exposed to said reaction, and monitoring the detected electrical signal to discriminate discrete fluctuations in the electrical signal, the discrete fluctuations indicating reaction intermediaries occurring during a chemical reaction.

The surface of a semiconductor substrate (1) comprises an input diode section (2) and a floating diffusion section (3) consisting of a diffusion region reverse to the substrate in conductivity type, an input gate (6) and an output gate (7) fixed on an insulation film (5) extending from an input diode section to a floating diffusion section, a sensing section (9) consisting of an ion sensitive film fixed on the insulation film extending from the input.

An ion concentration sensor produces a signal reflective of the ion concentration within a solution. The ion concentration sensor is based on an ion sensitive transistor having a solution input, a reference input, a diffusion input, and a diffusion output. The ion sensitive transistor is connected as a pass transistor, such that the diffusion output provides an electrical signal indicating an ion concentration in a solution contacting the solution input.

Preparation of a pH sensor, the prepared pH sensor, system comprising the same, and measurement using the system. The pH sensor is an extended gate field effect transistor (EGFET) structure. The preparation includes the steps of providing an extended gate ion sensitive field effect transistor comprising an extended gate region, forming a titanium nitride film on the extended gate region by RF sputtering deposition to obtain a pH sensor.

A method of observing reaction intermediaries during a chemical reaction and comprising detecting an electrical signal output from an ion sensitive field effect transistor exposed to said reaction, and monitoring the detected electrical signal to discriminate discrete fluctuations in the electrical signal, the discrete fluctuations indicating reaction intermediaries occurring during a chemical reaction.

The invention provides nanosensors and nanosensor components for the detection of ion channel activity, receptor activity, or protein protein interactions. Certain of the nanosensor components comprise a nanoparticle and recognition domain. Following contact with cells and, optionally, internalization of the nanosensor component by a cell, the recognition domain binds to a target domain, e.g., a heterologous target domain, of a polypeptide of interest such as an ion channel subunit, G protein coupled receptor (GPCR), or G protein subunit. Ion channel activity, GPCR activity, or altered protein interaction results in a detectable signal. The nanoparticles may be functionalized so that they respond to the presence of an ion by altering their proximity. Certain of the nanosensors utilize the phenomenon of plasmon resonance to produce a signal while others utilize magnetic properties, RET, and / or ion-sensitive moieties. Also provided are polypeptides, e.g., ion channel subunits, comprising a heterologous target domain, and cell lines that express the polypeptides. Further provided are a variety of methods for detecting ion channel activity, receptor activity, or protein interaction and for identifying compounds that modulate one or more of these. In certain embodiments the invention allows the user to detect the activity of specific ion channels even in the presence of other channels that permit passage of the same ion(s) or result in activation of the same downstream targets, thereby achieving improved specificity in high throughput screens while at the same time providing a high signal to noise ratio.

A signal processing circuit includes an ion sensitive field effect transistor, a reference electrode for the ion sensitive field effect transistor, a metal oxide semiconductor transistor having its gate coupled to the reference electrode, and a biasing circuit. The biasing circuit is configured to bias the ion sensitive field effect transistor and the metal oxide semiconductor field effect transistor to operate in a weak inversion region and to provide an output current signal.

A signal processing circuit comprising one or more ion sensitive field effect transistors, ISFETs, and a biasing circuit for biasing the or each ion sensitive field effect transistor to operate in the weak inversion region.

The present invention discloses an apparatus of ion sensitive thin film transistor and method of manufacturing of the same. The apparatus of the invention, formed on a glass substrate, comprises an ion detector, formed on said glass substrate, including a plurality of ion sensitive transistors and a signal processor with display, also formed on said glass substrate, being coupled with said ion detector. The signal processor with display further comprises a circuit of signal processing, a driver circuit, and a display, wherein by means of the method of Low Temperature PolySilicon, i.e. LTPS technology, the invention integrates said ion detector and said signal processor with display on said glass substrate to become an tiny, light and thin apparatus with portable and disposable characteristics.

The present invention provides ion-sensitive, water-dispersible polymers. The present invention also provides a method of making ion-sensitive, water-dispersible polymers and their applicability as binder compositions. The present invention further provides fiber-containing fabrics and webs comprising ion-sensitive, water-dispersible binder compositions and their applicability in water-dispersible personal care products.

pH-change sensors and related methods are disclosed. One such sensor may have a first ion-sensitive transistor-operational-transconductance-amplifier (the “first IOTA”) and a second ion-sensitive transistor-operational-transconductance-amplifier (the “second IOTA”). Each IOTA may have an ion-sensitive transistor, a load transistor, and an output. In each IOTA, the drain region of the ion-sensitive transistor may be connected to the drain region of the load transistor. A differential sensor may be connected to the IOTAs, and an output from the differential sensor may indicate a voltage difference between the IOTA outputs. The output from the differential sensor may be used to provide an indication of a change in pH.

The present invention relates to a reference electrode for a potentiometric electrode system, characterized in that the junction in contact with a sample solution is enlarged and an ion-sensitive membrane containing an ion selective material as a protective membrane for the inner reference solution is employed, which comprises a substrate; a metal layer; an insoluble metal salt layer; an insulating film for insulating the metal layer from an aqueous solution; a hydrogel serving as an inner reference solution; the junction on the hydrogel contacting with a sample solution; the ion-sensitive, protective membrane formed over all surface areas of the hydrogel, except for the junction, to separate the sample solution from the inner reference solution or act as an ion-sensing membrane upon the contamination of the junction, whereby the operational abnormality caused by junction contamination may be easily checked and fast activation may be achieved.

pH-change sensors and related methods are disclosed. One such sensor may have a first ion-sensitive transistor-operational-transconductance-amplifier (the “first IOTA”) and a second ion-sensitive transistor-operational-transconductance-amplifier (the “second IOTA”). Each IOTA may have an ion-sensitive transistor, a load transistor, and an output. In each IOTA, the drain region of the ion-sensitive transistor may be connected to the drain region of the load transistor. A differential sensor may be connected to the IOTAs, and an output from the differential sensor may indicate a voltage difference between the IOTA outputs. The output from the differential sensor may be used to provide an indication of a change in pH.

A sensing apparatus comprising an ion sensitive field effect transistor arranged to generate an electrical output signal in response to localised fluctuations of ionic charge at or adjacent the surface of the transistor, and means for detecting the electrical output signal from the ion sensitive field effect transistor, the localised fluctuations of ionic charge indicating events occurring during a chemical reaction.

The invention relates to an ion sensitive sensor comprising a silicon oxide layer and a silicon substrate which are vertically stacked, a source electrode and a drain electrode arranged on the silicon oxide layer at an interval, and a graphene layer arranged on the surface of the silicon oxide layer and between the source electrode and the drain electrode; wherein the graphene layer is respectively connected with a gear shaping part of the source electrode and a gear shaping part of the drain electrode, and the surface layer of the graphene layer is penetrated with metal oxide particles; the ion sensitive sensor also comprises a micro fluidic channel layer which is erected on the gear shaping part of the source electrode and the gear shaping part of the drain electrode, and the gear shaping part of the source electrode and the gear shaping part of the drain electrode are coated with insulating layers; the micro fluidic channel layer is matched with the graphene layer to form a cavity for accommodating an object for measurement, and is opened with through holes; and suspended grid electrodes are inserted into the through holes and extend into the cavity. The ion sensitive sensor has a structure which is similar to a field effect transistor, and has advantages of high flux, high sensitivity, short response time and the like.

The present invention relates to devices and chips comprising large scale chemical field effect transistor arrays including an array of sample retention regions capable of retaining a chemical or biological sample from a sample fluid for analysis. In one aspect, such an array of transistors has a pitch of 10 μm or less, and each sample retention region is located on at least one chemical field effect transistor arranged to generate at least one output signal, which signal is consistent with such related to the characteristics of the chemical or biological sample in the sample retention area. In one embodiment, said chemical or biological sample is characterized by the concentration of charged species, and wherein each of said chemical field effect transistors is an ion-sensitive field effect transistor having a floating The dielectric layer is in contact with the sample fluid and is capable of accumulating charge in proportion to the concentration of charged species in the sample fluid. In one embodiment, such charged species are hydrogen ions, whereby the sensor measures the change in pH of the sample fluid in or near its sample retention zone. The devices and chips of the present invention may be suitable for large-scale pH-based DNA sequencing and other bioscience and biomedical applications.

A polymeric membrane for ion sensitive measurement comprising a polymer, a lipophilic salt and at least two ionophores selective for different chemical species. The membrane may be used in a pseudo reference for measurement of a plurality of ions.

Charge transfer doped nanomaterials such as hydrogen terminated diamond, nanotubes, nanowires or similar nanostructures are used to create a highly sensitive pH sensor, or ion sensitive sensor to directly detect the addition of a newly incorporated nucleotide when performing DNA sequencing by synthesis. A single highly integrated chip can be made to sequence many strands of DNA in a massively parallel fashion in a short amount of time with a direct electronic readout that will bring the cost, size, power consumption of sequencing DNA to very attractive and useful levels.

The ion sensors using TFT or MOSFET are low in the measurement sensitivity so that it is difficult to detect an extremely small amount of sensing-target substance. A TFT ion sensor includes both a gate electrode (a silicon substrate) and a reference electrode, in which the electrostatic capacitance of a gate insulating film (a thermal oxide film) is set to be larger than the electrostatic capacitance of an ion sensitive insulating film. Therefore, it is possible to detect the concentration of ions, hormones, and the like in a sensing-target substance from the shift in the threshold voltage of the gate-source voltage to source-drain current property.

The present invention is directed to ion-sensitive, hard water dispersible polymers. The present invention is also directed to a method of making ion-sensitive, hard water dispersible polymers and their applicability as binder compositions. The present invention is further directed to fiber-containing fabrics and webs comprising ion-sensitive, hard water dispersible binder compositions and their applicability in water dispersible personal care products.

The invention provides a CMOS and ISFET dual-mode image chemical sensor chip for high-throughput gene sequencing; the chip comprises a dual-mode pixel array, a row decoder / driver, a column decoder / driver, a column parallel gain adjustable amplifier, a column parallel single-slope analog-digital converter, a static random access memory, a sensitive amplifier, a low voltage differential signal readout module, a static register, a phase-locked loop, a ramp generator and a digital control current source. The chip comprises an image sensor and an ion sensitive field effective transistor (ISFET) produced by a standard semiconductor process, so that optical image acquisition and chemical pH value detection can be performed. A high-speed correlated double sampling signal readout circuit adapting to the image and chemical dual-mode sensing is provided to reduce a system error caused by the mismatch between threshold voltages VT of the sensors. The chip has the advantages of high accuracy and high throughput when applied in gene sequencing.

An ion-sensitive field effect transistor includes a substrate on which there are formed a source region and a drain region. Above a channel region, the ion-sensitive field effect transistor has a gate with a sensitive layer including a metal oxide nitride mixture and / or a metal oxide nitride mixture compound.

The present invention is directed to ion-sensitive, water-dispersible polymers. The present invention is also directed to a method of making ion-sensitive, water-dispersible polymers and their applicability as binder compositions. The present invention is further directed to fiber-containing fabrics and webs comprising ion-sensitive, water-dispersible binder compositions and their applicability in water-dispersible personal care products.

The invention relates to an ion-sensitive field effect transistor, comprising a gate (36) consisting of carbon nitride. The carbon nitride gate (36) is highly resistant to aggressive substances to be measured and also exhibits good adhesive properties. In addition, the ion-sensitive field effect transistor has high long-term stability and negligible drift. Said ion-sensitive field effect transistor can be produced in a method that uses CMOS-compatible planar technology.

The present discloses an ion sensor and its readout circuit. The sensor includes potentiometric, amperometric ion sensors or dual mode electrochemical sensor. The dual mode electrochemical sensors can be measured by the same measurement circuit system. The dual mode sensors are extended gate ion sensitive field effect transistors and amperometric biosensors. The measurement circuit system is adaptable to the different mode sensors.