18 results about "Ion sensitive" patented technology

The invention relates to a capacitive flexible pressure sensor based on a double-sided hierarchical microstructure and a preparation method of the capacitive flexible pressure sensor, and belongs to the technical field of sensors. An upper flexible electrode layer; an ion sensitive layer; an isolation layer; an ionic gel layer; an intermediate support layer; a lower flexible electrode layer; and a lower encapsulation layer. According to the invention, by designing the double-sided graded microstructure, the ion sensitive layer and the ion gel layer can respond step by step under different pressures, so that the top of the microstructure is contacted at first under low pressure, and high sensitivity is provided; as the pressure is increased, the microstructure gradually topples over, and the contact area is increased, so that linear response is kept in a wide pressure range, and the problems that the sensitivity and the measuring range cannot be obtained at the same time, the response / recovery speed is low, the structure collapses and lags, and the EDL area utilization rate is low are solved.

The invention discloses a floating type multi-parameter water quality monitoring microsystem and a preparation method thereof, and belongs to the technical field of water quality monitoring. The water quality monitoring microsystem sequentially comprises a functional floating carrier substrate, a flexible circuit module and an insulating packaging layer from bottom to top, the flexible circuit module comprises a flexible insulating dielectric layer, a planar spiral inductance coil is arranged on the upper surface of the flexible insulating dielectric layer, and a plurality of interdigital electrodes are arranged on the lower surface of the flexible insulating dielectric layer; each interdigital electrode is connected with the planar spiral inductance coil to form an LC resonant circuit of which the working frequencies are not overlapped; the surfaces of the interdigital electrodes are coated with ion sensitive membranes respectively; a through detection window is formed in the position, corresponding to the interdigital electrode, of the functionalized floating carrier substrate, so that the interdigital electrode can be directly contacted with a water body to be detected below through the detection window; and the insulating packaging layer completely covers the planar spiral inductance coil. The system can be used for monitoring water quality, and has the advantages of good real-time performance, high detection precision and the like.

The invention discloses an ion detection device, which comprises a substrate, a circuit layer, an ion sensitive layer, a packaging layer and a barrier layer, and is characterized in that the circuit layer is located at one side of the substrate; the circuit layer comprises a first transistor; the ion sensitive layer is located on one side of the circuit layer away from the substrate; the packaging layer is located on one side, away from the substrate, of the ion sensitive layer; the packaging layer is provided with a first through hole, and the first through hole exposes part of the ion sensitive layer; the barrier layer is located between the circuit layer and the ion sensitive layer; the barrier layer comprises a first barrier part, and the first barrier part is overlapped with the first through hole in the direction perpendicular to the plane where the substrate is located. According to the technical scheme, the reliability of the device can be improved.

Structures for an ion-sensitive field-effect transistor and methods of forming same. The structure comprises a semiconductor substrate, a microfluidic channel above the semiconductor substrate, a semiconductor layer including a portion positioned as a sensing layer in the microfluidic channel, a first electrical connection coupled to the portion of the semiconductor layer, and a second electrical connection coupled to the semiconductor substrate. The portion of the semiconductor layer is spaced above the semiconductor substrate.

The electrolyte analysis test strip of the present invention includes a substrate extending in one direction. A first ion-sensitive film provided in a specific region on the one end side in the one direction and a first extraction electrode extending from the first ion-sensitive film to the other end side are provided on one main surface of the substrate. A second ion-sensitive film provided in a specific region on the one end side and a second extraction electrode extending from the second ion-sensitive film to the other end side are provided on the other main surface of the substrate. The first ion-sensitive film and the second ion-sensitive film each come into contact with an electrolyte to generate a first potential corresponding to a concentration of a first ion species and a second potential corresponding to a concentration of a second ion species, respectively.

In described examples, a biosensor device has a porous membrane with a test region that contains a test analyte. A sensor die has an ion sensing field effect transistor (ISFET) with an ion sensitive gate element located in an active sensor surface of the sensor die. The active sensor surface is in contact with the porous membrane test region. A controller is coupled to the ISFET and an interface module is coupled to the controller to provide a human readable test result.

A pH sensor includes a measurement object electrode disposed in the measurement object to control a potential of the measurement object; a measurement object power supply that applies a voltage to the measurement object electrode; a measurement ISFET including a measurement ion sensitive film; a measurement film electrode disposed in the measurement ion sensitive film to control a potential of the measurement ion sensitive film; a measurement film power supply that applies a voltage to the measurement film electrode; a capacitor connected to the measurement object electrode and the measurement film electrode to generate a potential difference between the measurement object electrode and the measurement film electrode; and a power supply control unit that controls a magnitude of the voltage output from the measurement object power supply, and that controls a magnitude of the voltage output from the measurement film power supply.

The present invention relates to closed loop pH control using a differential sensor. A closed loop system and method for controlling pH. The system includes a working electrode, a counter electrode, a reference electrode, a first ion sensitive field effect transistor (ISFET), a second ISFET, and an electronic controller. The working electrode, the counter electrode, the reference electrode, and a first sensing terminal of the first ISFET can be immersed in an active solution. A second sensing terminal of the second ISFET can be immersed in a reference solution. The electronic controller is configured to apply a first amount of current or voltage to the working electrode and determine a differential voltage between the first ISFET and the second ISFET. The electronic controller is further configured to set a second amount of current or voltage to reduce a difference between the differential voltage and a target voltage. The electronic controller is further configured to apply the second amount of current or voltage to the working electrode.

The application discloses a kind of monolithic three-dimensional integrated differential amplification circuit ion sensing system and preparation method thereof, belong to MEMS technical field, including differential amplification circuit and ion-sensitive field effect transistor, by setting molybdenum disulfide layer in differential amplification circuit, and ion-sensitive field effect transistor is set on molybdenum disulfide layer, through the two ion-sensitive membranes set on two gates synchronous work under differential amplification circuit, one ion-sensitive membrane senses ion signal in the liquid to be measured, another ion-sensitive membrane senses environmental noise, through ion-sensitive field effect transistor and differential amplification circuit, the difference of two end output signals is extracted and amplified, while retaining target ion response signal, environmental noise is inhibited, high-precision, high-sensitivity detection to target ion concentration is realized;And the whole ion sensing system only occupies the area of two FETs, reduces chip plane area, realizes the chip-level miniaturization and high integration of ion sensing system.

The invention discloses an ion sensitive field effect transistor and a manufacturing method thereof, the ion sensitive field effect transistor can be used in the field of semiconductors, and a grid electrode of the ion sensitive field effect transistor is of a three-layer structure; the grid electrode comprises a first material layer, a second material layer and a columnar array structure; the first material layer is located on the side, close to the substrate, of the gate, the second material layer is located on the side, away from the substrate, of the gate, and the columnar array structure is located between the first material layer and the second material layer. Therefore, a grid electrode with a three-layer structure is designed for the ion sensitive field effect transistor, compared with a traditional plane structure, the columnar array structure has a larger specific surface area, more targeted molecule modification sites can be provided, the interaction between targeted molecules and a to-be-detected substance is enhanced, the interface potential change is more remarkable, and the detection sensitivity is improved. And the detection sensitivity of the ion sensitive field effect transistor is effectively improved.

The invention discloses an ion sensing system of a monolithic three-dimensional integrated differential amplification circuit and a preparation method of the ion sensing system, and belongs to the technical field of MEMS, the ion sensing system comprises a differential amplification circuit and an ion sensitive field effect transistor, a molybdenum disulfide layer is arranged in the differential amplification circuit, and the ion sensitive field effect transistor is arranged on the molybdenum disulfide layer. Two ion sensitive films arranged on two grid electrodes synchronously work under a differential amplification circuit, one ion sensitive film senses ion signals in liquid to be detected, the other ion sensitive film senses environmental noise, and the difference value of output signals at the two ends is extracted and amplified through an ion sensitive field effect transistor and the differential amplification circuit. Environmental noise is suppressed while target ion response signals are reserved, and high-precision and high-sensitivity detection of target ion concentration is realized; and the whole ion sensing system only occupies the area of two FETs, so that the plane area of a chip is reduced, and chip-level miniaturization and high integration of the ion sensing system are realized.

Provided is an ion detection device. The ion detection device includes a substrate, a circuit layer, an ion-sensitive layer, an encapsulation layer, and a blocking layer. The circuit layer is located on a side of the substrate and includes a first transistor. The ion-sensitive layer is located on a side of the circuit layer facing away from the substrate. The encapsulation layer is located on a side of the ion-sensitive layer facing away from the substrate and is provided with a first through hole that exposes part of the ion-sensitive layer. The blocking layer is located between the circuit layer and the ion-sensitive layer and includes a first blocking portion that overlaps the first through hole in a direction perpendicular to a plane on which the substrate is located.

The invention discloses an ionic flexible pressure sensor based on a bionic gradient tenon-and-mortise structure and a preparation method thereof, belongs to the crossing field of flexible electronics and pressure sensing technologies, and aims to overcome the defects that an existing ionic flexible pressure sensor is uneven in pressure response and the structure is prone to failure under large pressure. The requirements of man-machine interaction, intelligent robots and wearable electronic scenes for high-precision, high-stability and high-flexibility sensing are met. The sensor takes a Chinese ancient building'mortise and tenon 'as a bionic prototype to construct a'gradient mortise-gradient tenon' occlusion core structure: a gradient mortise is provided with a gradient groove distributed along a pressure conduction direction, and the bottom of the gradient mortise is communicated with an ion storage cavity; the gradient tenon height is precisely matched with the mortise depth, and the surface is covered with an ion sensitive layer; the ion conducting layer is filled in the tenon-and-mortise gap; the obtained sensor has good pressure response uniformity, structural stability and flexibility, and can be widely applied to the fields of man-machine interaction, intelligent robots and wearable electronics.

An ion-sensitive field-effect transistor (ISFET) for testing a medium, wherein the ISFET comprises the following: a substrate; an active layer located on the substrate; a source region and a drain region in the active layer; a gate structure over a channel area between the drain area and the source area; a backend stack comprising a plurality of metal layers, wherein the gate structure is directly connected to a topmost metal layer of the plurality of metal layers, and the drain region and the source region are directly connected to one or more other metal layer(s) of the plurality of metal layers; and a detection layer covering the top metal layer, wherein the detection layer includes an anti-reflective coating (ARC) layer arranged to come into contact with the medium.

The invention provides a detection substrate, an ion detection method and electronic equipment, and relates to the technical field of electronic devices, the detection substrate comprises a substrate and at least one detection unit arranged on one side of the substrate, and the detection unit comprises a first transistor; the first transistor comprises a first gate electrode, a first gate insulating layer, an active layer, a source electrode, a drain electrode, a second gate electrode, a second gate insulating layer and an ion sensitive layer; wherein the second gate electrode is electrically connected with the first gate electrode. Therefore, by electrically connecting the first gate electrode with the second gate electrode, the charge change of the ion sensitive layer can simultaneously change the voltage of the first gate electrode and the voltage of the second gate electrode in the ion detection process, so that the back channel and the front channel of the first transistor generate a modulation effect, the output current of the first transistor can be improved, and the detection sensitivity of the ion detector is improved. Therefore, the ion detection sensitivity of the detection unit is improved.

Various embodiments of the present application are directed towards an ion-sensitive field-effect transistor for enhanced sensitivity. In some embodiments, a substrate comprises a pair of first source / drain regions and a pair of second source / drain regions. Further, a first gate electrode and a second gate electrode underlie the substrate. The first gate electrode is laterally between the first source / drain regions, and the second gate electrode is laterally between the second source / drain regions. An interconnect structure underlies the substrate and defines conductive paths electrically shorting the second source / drain regions and the second gate electrode together. A passivation layer is over the substrate and defines a first well and a second well. The first and second wells respectively overlie the first and second gate electrodes, and a sensing layer lines the substrate in the first and second wells. In some embodiments, sensing probes are in the first well, but not the second well.

An ion sensitive field effect transistor (ISFET) for testing a medium, the ISFET comprising: a substrate; the active layer is located on the substrate; a source region and a drain region in the active layer; a gate structure over the channel region between the drain region and the source region; a back-end stack comprising a plurality of metal layers wherein the gate structure is directly connected to a top metal layer of the plurality of metal layers and the drain region and the source region are directly connected to one or more other metal layers of the plurality of metal layers; and a sensing layer overlying the top metal layer wherein the sensing layer comprises an anti-reflective coating (ARC) arranged in contact with a medium.

The application discloses a floating type multi-parameter water quality monitoring microsystem and a preparation method thereof, and belongs to the technical field of water quality monitoring. The water quality monitoring microsystem comprises, from bottom to top, a functionalized floating carrier substrate, a flexible circuit module and an insulating packaging layer. The flexible circuit module comprises a flexible insulating medium layer, a planar spiral inductor coil is arranged on the upper surface of the flexible insulating medium layer, and a plurality of interdigital electrodes are arranged on the lower surface of the flexible insulating medium layer. Each interdigital electrode is connected with the planar spiral inductor coil to form LC resonance loops with different working frequencies. An ion-sensitive film is coated on the surface of each interdigital electrode. A detection window is arranged on the functionalized floating carrier substrate and corresponds to the position of the interdigital electrode, so that the interdigital electrode can directly contact the water body to be detected through the detection window. The insulating packaging layer completely covers the planar spiral inductor coil. The application can monitor water quality and has the advantages of good real-time performance, high detection precision and the like.