38 results about "Ion sensitive" patented technology

The invention discloses a miniature multi-ion sensing system based on a non-gate array and a preparation method thereof, and belongs to the technical field of electrochemical sensing, and the miniature multi-ion sensing system comprises a multi-ion sensing unit and a molybdenum disulfide non-gate array; the multi-ion sensitive unit comprises a metal electrode array, an ion sensitive film array and a liquid storage tank, multiple ions are detected through the ion sensitive film array at the same time and converted into electric signals, and the electric signals are transmitted to the molybdenum disulfide non-gate array through the metal electrode array; the molybdenum disulfide NOT gate array comprises a plurality of molybdenum disulfide NOT gates, and each molybdenum disulfide NOT gate comprises a metal electrode layer, a molybdenum disulfide layer, a NOT gate input end and a NOT gate output end, so that two field effect transistors are formed, received electric signals are amplified, the Nernst limit is broken through a NOT gate structure, and tiny changes of ion concentration are accurately detected. The sensitivity is higher; molybdenum disulfide is used as a channel material of the NOT gate, so that the size and power consumption of the NOT gate are effectively reduced, the integration level of the system is improved, and the service life of the system is prolonged.

The invention relates to a capacitive flexible pressure sensor based on a double-sided hierarchical microstructure and a preparation method of the capacitive flexible pressure sensor, and belongs to the technical field of sensors. An upper flexible electrode layer; an ion sensitive layer; an isolation layer; an ionic gel layer; an intermediate support layer; a lower flexible electrode layer; and a lower encapsulation layer. According to the invention, by designing the double-sided graded microstructure, the ion sensitive layer and the ion gel layer can respond step by step under different pressures, so that the top of the microstructure is contacted at first under low pressure, and high sensitivity is provided; as the pressure is increased, the microstructure gradually topples over, and the contact area is increased, so that linear response is kept in a wide pressure range, and the problems that the sensitivity and the measuring range cannot be obtained at the same time, the response / recovery speed is low, the structure collapses and lags, and the EDL area utilization rate is low are solved.

The invention relates to an ammonium ion selective electrode, a preparation method thereof and application of the ammonium ion selective electrode in detection of ammonium ions in black and odorous water, and belongs to the field of electrochemical detection sensors. The method comprises the following steps: dispersing graphene oxide into water to obtain a dispersion liquid, and mixing the dispersion liquid with a Nafion solution to form a graphene oxide-Nafion mixed solution; coating on a substrate electrode, and drying to obtain a substrate electrode I; the substrate electrode I is placed in an electroplating solution for constant-current electrodeposition, and an ion selective electrode containing a solid contact layer is obtained; the electroplating solution contains 3, 4-ethylenedioxythiophene, a hydrophobic organic matter and lithium perchlorate; and dropwise adding an ammonium ion sensitive solution on the surface of the ion selective electrode containing the solid contact layer, and standing for 20-30 hours to obtain the ammonium ion selective electrode. The method is simple in preparation process, large-scale production can be achieved, the service life of the electrode is prolonged, the sensitivity of the electrode is improved, and meanwhile the stability of the electrode in fluid and the reliability of real-time monitoring are improved.

The utility model relates to the technical field of heavy metal online detection. The utility model provides a multi-channel water quality heavy metal ion detection device. The multi-channel water quality heavy metal ion detection device comprises a quantitative unit, a multi-way valve, a precise sample injector, a reaction tank, a circulating pump, a multi-way valve I, an ion sensitive sensor, a multi-way valve II and a detection device, the quantifying unit is provided with a liquid extraction opening; the multi-way valve comprises nine independent interfaces; the precise sample injector is provided with a sample inlet and a sample outlet; a liquid pumping opening of the quantifying unit is communicated with a first interface of the multi-way valve; the second multi-way valve comprises five inlets and one public port. The first multi-way valve comprises five inlets and one public port. According to the scheme of the utility model, aiming at the problems that the existing electrochemical online detection instrument cannot measure various ions at the same time and is poor in anti-interference capability, the online detection aims of low cost, simultaneous measurement of various heavy metal ions, interference resistance and improvement of detection accuracy are fulfilled by utilizing the ion sensitive membrane and a multi-channel design.

The invention provides a flexible semiconductor device and application thereof. The flexible semiconductor device comprises a flexible substrate; the first metal layer is located on the flexible substrate and serves as a device grid electrode; the insulating dielectric layer is formed on the flexible substrate and covers the first metal layer; the two-dimensional semiconductor film is arranged on the insulating dielectric layer and serves as a device conducting channel; the second metal layer is formed on the insulating dielectric layer, surrounds the side surface of the two-dimensional semiconductor film and serves as a source electrode and a drain electrode of the device; the ion sensitive film covers the surface of the two-dimensional semiconductor film, and a micropore structure is formed in the position, corresponding to the two-dimensional semiconductor film, of the ion sensitive film; and the gold film covers the side wall of the microporous structure and can adsorb a DNA nucleic acid joint. The device has the advantages of being simple in structure, stable in performance, low in cost, easy and convenient to operate and the like, and when the device is used for gene sequencing, the gene sequencing efficiency and accuracy can be effectively improved.

The invention discloses a floating type multi-parameter water quality monitoring microsystem and a preparation method thereof, and belongs to the technical field of water quality monitoring. The water quality monitoring microsystem sequentially comprises a functional floating carrier substrate, a flexible circuit module and an insulating packaging layer from bottom to top, the flexible circuit module comprises a flexible insulating dielectric layer, a planar spiral inductance coil is arranged on the upper surface of the flexible insulating dielectric layer, and a plurality of interdigital electrodes are arranged on the lower surface of the flexible insulating dielectric layer; each interdigital electrode is connected with the planar spiral inductance coil to form an LC resonant circuit of which the working frequencies are not overlapped; the surfaces of the interdigital electrodes are coated with ion sensitive membranes respectively; a through detection window is formed in the position, corresponding to the interdigital electrode, of the functionalized floating carrier substrate, so that the interdigital electrode can be directly contacted with a water body to be detected below through the detection window; and the insulating packaging layer completely covers the planar spiral inductance coil. The system can be used for monitoring water quality, and has the advantages of good real-time performance, high detection precision and the like.

An ion-selective electrode includes: an ion-sensitive layer containing an ion-sensitive substance; and a solid, in which at least a part of a surface of the solid is coated with the ion-sensitive layer, the ion-sensitive substance has a crown ether structure formed of at least two or more repeating units represented by Formula (a):—CR1R2—CR3X—O—  (a)where X is an organic group having an alkoxysilyl group at a terminal, R1, R2, and R3 are each a hydrogen atom or a hydrocarbon group, and R1 or R2 may be bonded to X, and at least one of the alkoxysilyl groups of the crown ether structure reacts to be bonded to at least a part of the surface of the solid.

Disclosed are ion-sensitive polymers and methods for their use for monitoring biological phenomena associated with ion fluxes, as well as organic electrochemical transistors including such polymers.

Aiming at the shortcomings and limitations of the existing two-dimensional ion-sensitive field effect transistor and extended gate field effect transistor, an ion-sensitive field effect transistor and an extended field effect bio-detection chip are proposed. In addition to extending the gate to the top of the chip or configuring metal internal connections on the gate, so that the area reacting with the biological sample to be detected is away from the transistor channel to reduce noise and interference, the profile of the conductor located above the transistor channel is adjusted to have different parts extending in different directions, thereby increasing the reaction area with the biological sample to be detected and improving the reaction efficiency and accuracy. In addition, a single transistor is corresponded to multiple or even multiple electrodes, even multiple adjacent transistors are configured as described and grouped together, and the signals generated by the reaction with the biological sample to be detected are output to the external circuit, thereby simultaneously detecting multiple or even multiple biological samples to be detected, and reducing the cost of consumables and noise.

The invention discloses an ion detection device, which comprises a substrate, a circuit layer, an ion sensitive layer, a packaging layer and a barrier layer, and is characterized in that the circuit layer is located at one side of the substrate; the circuit layer comprises a first transistor; the ion sensitive layer is located on one side of the circuit layer away from the substrate; the packaging layer is located on one side, away from the substrate, of the ion sensitive layer; the packaging layer is provided with a first through hole, and the first through hole exposes part of the ion sensitive layer; the barrier layer is located between the circuit layer and the ion sensitive layer; the barrier layer comprises a first barrier part, and the first barrier part is overlapped with the first through hole in the direction perpendicular to the plane where the substrate is located. According to the technical scheme, the reliability of the device can be improved.

Structures for an ion-sensitive field-effect transistor and methods of forming same. The structure comprises a semiconductor substrate, a microfluidic channel above the semiconductor substrate, a semiconductor layer including a portion positioned as a sensing layer in the microfluidic channel, a first electrical connection coupled to the portion of the semiconductor layer, and a second electrical connection coupled to the semiconductor substrate. The portion of the semiconductor layer is spaced above the semiconductor substrate.

The invention belongs to the technical field of precision medicine and novel diagnosis, and particularly relates to a high-precision full-quantitative tear marker detection chip and method for dry eye diagnosis. Cantilever structures are arranged on the upper portion and the lower portion in the base respectively. A driving electrode and a sensing electrode are deposited on the right side of the base respectively. The output electrode plate and the reaction electrode plate are connected through a metal wire, an ion sensitive membrane or a reference electrode is arranged on the reaction electrode plate, a modified electrode is deposited outside the fan-shaped sensitive area, and an antibody modified layer is arranged on the modified electrode; according to the invention, innovative design and temperature compensation design of a multi-parameter sensing structure are realized through large-adsorption-area and high-Q-value plane resonant symmetrical design, and a synergistic mechanism between system response and design parameters of the tear detection chip is deeply researched, so that high-precision simultaneous detection of multiple tear biomarkers is realized; therefore, the purpose of auxiliary diagnosis and treatment of the dry eye patient is achieved quickly.

The application discloses a high-sensitivity ammonium ion electrochemical sensor and application thereof, and belongs to the technical field of electrochemical sensors.The electrochemical sensor comprises a full-solid-state ammonium ion selective electrode, the electrode comprises an electrically conductive base, a solid-state contact layer and an ammonium ion sensitive film arranged in sequence, the electrically conductive base is a silk screen printed carbon electrode with copper nanoparticles on the surface; the solid-state contact layer is composed of a polyaniline and reduced graphene oxide composite; and the composition of the ammonium ion sensitive film comprises polydopamine and an ammonium ion carrier.The characteristics of the above-mentioned modified materials expand the linear detection range of the sensor to ammonium ions, improve the sensitivity, and can sensitively detect 10 ‑7 ~ 10 ‑1 M ammonium ion concentrations, and have good application prospects in the fields of on-site rapid detection of low-concentration ammonium ions in environmental water, aquaculture water and seawater.

The electrolyte analysis test strip of the present invention includes a substrate extending in one direction. A first ion-sensitive film provided in a specific region on the one end side in the one direction and a first extraction electrode extending from the first ion-sensitive film to the other end side are provided on one main surface of the substrate. A second ion-sensitive film provided in a specific region on the one end side and a second extraction electrode extending from the second ion-sensitive film to the other end side are provided on the other main surface of the substrate. The first ion-sensitive film and the second ion-sensitive film each come into contact with an electrolyte to generate a first potential corresponding to a concentration of a first ion species and a second potential corresponding to a concentration of a second ion species, respectively.

In described examples, a biosensor device has a porous membrane with a test region that contains a test analyte. A sensor die has an ion sensing field effect transistor (ISFET) with an ion sensitive gate element located in an active sensor surface of the sensor die. The active sensor surface is in contact with the porous membrane test region. A controller is coupled to the ISFET and an interface module is coupled to the controller to provide a human readable test result.

The present invention provides a bio-information security chip based on an ion-sensitive field-effect transistor, comprising: an ISFET array, a row and column word line selection circuit and a bit line selection circuit in the ISFET array respectively controlled by being connected to the ISFET array, a timing control circuit respectively connected to the word line selection circuit and the bit line selection circuit, and an input driving circuit connected to the word line selection circuit; a transimpedance amplifier and a physically unclonable function circuit are arranged at the output end of the bit line selection circuit, an analog-to-digital converter is arranged at the output end of the transimpedance amplifier, and an encryption circuit is arranged between the output end of the analog-to-digital converter and the output end of the physically unclonable function circuit. The present invention combines an ISFET array with PUF technology, utilizes the physical characteristics of the ISFET array to generate a unique and non-replicable key; according to the key, the encryption circuit is used to encrypt digital signals to obtain encrypted data, so as to protect bio-information from being stolen.

A pH sensor includes a measurement object electrode disposed in the measurement object to control a potential of the measurement object; a measurement object power supply that applies a voltage to the measurement object electrode; a measurement ISFET including a measurement ion sensitive film; a measurement film electrode disposed in the measurement ion sensitive film to control a potential of the measurement ion sensitive film; a measurement film power supply that applies a voltage to the measurement film electrode; a capacitor connected to the measurement object electrode and the measurement film electrode to generate a potential difference between the measurement object electrode and the measurement film electrode; and a power supply control unit that controls a magnitude of the voltage output from the measurement object power supply, and that controls a magnitude of the voltage output from the measurement film power supply.

Provided is a technology which makes it possible to easily control film thickness when forming a thermosetting resin-type ion-sensitive film during manufacturing of a flow-type ion-selective electrode. The present disclosure is a method for manufacturing a flow-type ion-selective electrode having a flow path (12) that penetrates an electrode housing (11), the method being characterized by comprising: inserting a flow-path protection jig (101) into the flow path (12); holding a thermosetting resin liquid (104) in a gap between a film-thickness control jig (100) and a film formation part (14) of the electrode housing (11) including a portion of the flow-path protection jig (101); forming an ion-sensitive film (17) by curing the thermosetting resin liquid (104) in a state held in the gap; and removing the film-thickness control jig (100) and the flow-path protection jig (101) after curing.

The present invention relates to closed loop pH control using a differential sensor. A closed loop system and method for controlling pH. The system includes a working electrode, a counter electrode, a reference electrode, a first ion sensitive field effect transistor (ISFET), a second ISFET, and an electronic controller. The working electrode, the counter electrode, the reference electrode, and a first sensing terminal of the first ISFET can be immersed in an active solution. A second sensing terminal of the second ISFET can be immersed in a reference solution. The electronic controller is configured to apply a first amount of current or voltage to the working electrode and determine a differential voltage between the first ISFET and the second ISFET. The electronic controller is further configured to set a second amount of current or voltage to reduce a difference between the differential voltage and a target voltage. The electronic controller is further configured to apply the second amount of current or voltage to the working electrode.

The application discloses a kind of monolithic three-dimensional integrated differential amplification circuit ion sensing system and preparation method thereof, belong to MEMS technical field, including differential amplification circuit and ion-sensitive field effect transistor, by setting molybdenum disulfide layer in differential amplification circuit, and ion-sensitive field effect transistor is set on molybdenum disulfide layer, through the two ion-sensitive membranes set on two gates synchronous work under differential amplification circuit, one ion-sensitive membrane senses ion signal in the liquid to be measured, another ion-sensitive membrane senses environmental noise, through ion-sensitive field effect transistor and differential amplification circuit, the difference of two end output signals is extracted and amplified, while retaining target ion response signal, environmental noise is inhibited, high-precision, high-sensitivity detection to target ion concentration is realized;And the whole ion sensing system only occupies the area of two FETs, reduces chip plane area, realizes the chip-level miniaturization and high integration of ion sensing system.

A reference electrode for electrochemical measurement includes a substrate, an electrode portion on the substrate, and an ion-sensitive film covering the electrode portion and including an inorganic salt and an organic substance. The electrode portion and the inorganic salt include an anion of the same element. In a top view of the electrode portion, the maximum shortest distance from any point in the electrode portion to the outer perimeter of the electrode portion is about 0.3 mm or less.

The invention discloses an ion sensitive field effect transistor and a manufacturing method thereof, the ion sensitive field effect transistor can be used in the field of semiconductors, and a grid electrode of the ion sensitive field effect transistor is of a three-layer structure; the grid electrode comprises a first material layer, a second material layer and a columnar array structure; the first material layer is located on the side, close to the substrate, of the gate, the second material layer is located on the side, away from the substrate, of the gate, and the columnar array structure is located between the first material layer and the second material layer. Therefore, a grid electrode with a three-layer structure is designed for the ion sensitive field effect transistor, compared with a traditional plane structure, the columnar array structure has a larger specific surface area, more targeted molecule modification sites can be provided, the interaction between targeted molecules and a to-be-detected substance is enhanced, the interface potential change is more remarkable, and the detection sensitivity is improved. And the detection sensitivity of the ion sensitive field effect transistor is effectively improved.

The invention discloses an ion sensing system of a monolithic three-dimensional integrated differential amplification circuit and a preparation method of the ion sensing system, and belongs to the technical field of MEMS, the ion sensing system comprises a differential amplification circuit and an ion sensitive field effect transistor, a molybdenum disulfide layer is arranged in the differential amplification circuit, and the ion sensitive field effect transistor is arranged on the molybdenum disulfide layer. Two ion sensitive films arranged on two grid electrodes synchronously work under a differential amplification circuit, one ion sensitive film senses ion signals in liquid to be detected, the other ion sensitive film senses environmental noise, and the difference value of output signals at the two ends is extracted and amplified through an ion sensitive field effect transistor and the differential amplification circuit. Environmental noise is suppressed while target ion response signals are reserved, and high-precision and high-sensitivity detection of target ion concentration is realized; and the whole ion sensing system only occupies the area of two FETs, so that the plane area of a chip is reduced, and chip-level miniaturization and high integration of the ion sensing system are realized.

The present disclosure relates to integrated ion sensing devices and methods. An integrated ion-sensitive probe is provided. In examples, the ion-sensitive probe can include a semiconductor substrate and a first passive electrode attached to the semiconductor substrate. The first passive electrode can be configured to contact a solution and provide a first voltage that is a function of an ion concentration in the solution. In certain examples, a passive reference electrode can be collocated on the semiconductor substrate. In some examples, processing electronics can be integrated on the semiconductor substrate.

Disclosed is a semiconductor structure including a device (e.g., a field effect transistor (FET), a biosensor FET (bioFET) or an ion-sensitive FET (ISFET)) with a fluid-based gate. The structure includes a substrate, an intermediate layer on the substrate, and a semiconductor layer on the intermediate layer. The device includes, within the semiconductor layer, a source region, a drain region, and a channel region between the source and drain regions. The structure includes, for the fluid-base gate, a cavity within the intermediate layer below the channel region and lined with a dielectric liner. Optionally, the exposed surface of the dielectric liner within the cavity is functionalized. Additional dielectric layers are stacked on the semiconductor layer and at least one port extends essentially vertically through the dielectric layers, the semiconductor layer and the dielectric liner to the cavity so as to allow fluid for the fluid-based gate to flow into the cavity.

Provided is an ion detection device. The ion detection device includes a substrate, a circuit layer, an ion-sensitive layer, an encapsulation layer, and a blocking layer. The circuit layer is located on a side of the substrate and includes a first transistor. The ion-sensitive layer is located on a side of the circuit layer facing away from the substrate. The encapsulation layer is located on a side of the ion-sensitive layer facing away from the substrate and is provided with a first through hole that exposes part of the ion-sensitive layer. The blocking layer is located between the circuit layer and the ion-sensitive layer and includes a first blocking portion that overlaps the first through hole in a direction perpendicular to a plane on which the substrate is located.

A method for manufacturing an ion sensor is provided in which an ion-sensitive film is adhered to an electrode body that accommodates an internal solution and has an internal electrode. The method includes an application step for applying water to a placement surface of the electrode body on which the ion-sensitive film is to be placed; a placement step for placing the ion-sensitive film in a state in which water is present on the placement surface; a pressurizing step for pressurizing the ion-sensitive film from the opposite side of the electrode body; and an irradiation step for irradiating a laser beam from the opposite side of the electrode body in a state in which the ion-sensitive film is pressed against the electrode body.

The invention discloses an ionic flexible pressure sensor based on a bionic gradient tenon-and-mortise structure and a preparation method thereof, belongs to the crossing field of flexible electronics and pressure sensing technologies, and aims to overcome the defects that an existing ionic flexible pressure sensor is uneven in pressure response and the structure is prone to failure under large pressure. The requirements of man-machine interaction, intelligent robots and wearable electronic scenes for high-precision, high-stability and high-flexibility sensing are met. The sensor takes a Chinese ancient building'mortise and tenon 'as a bionic prototype to construct a'gradient mortise-gradient tenon' occlusion core structure: a gradient mortise is provided with a gradient groove distributed along a pressure conduction direction, and the bottom of the gradient mortise is communicated with an ion storage cavity; the gradient tenon height is precisely matched with the mortise depth, and the surface is covered with an ion sensitive layer; the ion conducting layer is filled in the tenon-and-mortise gap; the obtained sensor has good pressure response uniformity, structural stability and flexibility, and can be widely applied to the fields of man-machine interaction, intelligent robots and wearable electronics.

An ion-sensitive field-effect transistor (ISFET) for testing a medium, wherein the ISFET comprises the following: a substrate; an active layer located on the substrate; a source region and a drain region in the active layer; a gate structure over a channel area between the drain area and the source area; a backend stack comprising a plurality of metal layers, wherein the gate structure is directly connected to a topmost metal layer of the plurality of metal layers, and the drain region and the source region are directly connected to one or more other metal layer(s) of the plurality of metal layers; and a detection layer covering the top metal layer, wherein the detection layer includes an anti-reflective coating (ARC) layer arranged to come into contact with the medium.

The invention relates to an ion selective electrode, a preparation method thereof and a detection probe. The ion selective electrode comprises a conductive substrate, a conductive layer, a solid contact layer and an ammonium ion sensitive film which are sequentially stacked, the conductive substrate is a metal sheet, and the solid contact layer comprises graphene quantum dots and a conductive polymer. The preparation method of the ion selective electrode comprises the following steps: (1) electrically depositing a conductive layer on a conductive substrate, wherein the conductive substrate is a metal sheet; (2) electrodepositing a solid-state contact layer on the conductive layer by using a dispersion liquid for forming the solid-state contact layer, the dispersion liquid for forming the solid-state contact layer including graphene quantum dots and a monomer for forming a conductive polymer; and (3) forming an ammonium ion sensitive membrane on the solid contact layer. The detection probe comprises a connecting seat and the ion selective electrode, wherein the ion selective electrode is in threaded connection with the connecting seat.