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APD-TIA (Avalanche Photodiode-Transfer-Impedance Amplifier) coaxial photoelectric module with temperature control function and fabrication method thereof

A photoelectric component, coaxial technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of sensitivity change of light-receiving components, achieving the best light multiplication state, and inability to compensate for noise, etc. Achieve the effects of stable light receiving sensitivity, long component life, and precise temperature control.

Inactive Publication Date: 2012-04-11
WUHAN HUAGONG GENUINE OPTICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result of doing so, it will lead to control deviation, which will cause the sensitivity of some light-receiving components to change. In severe cases, compensation failure and bit errors will occur, which will inevitably lead to an increase in the total failure rate of components.
[0008] Second, this temperature-bias compensation method is difficult to achieve the best light multiplication state in the full temperature range of the same component
Moreover, the noise caused by high temperature cannot be compensated

Method used

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  • APD-TIA (Avalanche Photodiode-Transfer-Impedance Amplifier) coaxial photoelectric module with temperature control function and fabrication method thereof
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  • APD-TIA (Avalanche Photodiode-Transfer-Impedance Amplifier) coaxial photoelectric module with temperature control function and fabrication method thereof

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Embodiment Construction

[0050] The photoelectric component and manufacturing method of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments of the present invention.

[0051] Take the existing 10Gb / s APD-TIA coaxial TO56 optoelectronic component as an example, the optoelectronic component has only 4 pins. Since the internal space of TO is very small, the following key problems must be solved to place multiple components such as thermoelectric cooler, thermistor, 10Gb / s APD and 10Gb / s TIA inside TO56:

[0052] a) The TO shell should have 8 pins (excluding the shell grounding pins). Since 4 more components need to be placed, and there must be two independent pins for RF output, the existing 4 pins The pins cannot meet the needs;

[0053] b) The interior of the TO base should be able to accommodate the TEC, which is the most basic condition;

[0054] c) TEC can meet the requirements of power dissipation, which is the requirement ...

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Abstract

The invention discloses an Avalanche Photodiode-Transfer-Impedance Amplifier (APD-TIA) coaxial photoelectric module with a temperature control function and a fabrication method thereof. The APD-TIA coaxial photoelectric module mainly comprises a TO56 base with eight pins plus one pin, a thermoelectric cooler (TEC), an AIN (aluminium nitride) ceramic circuit substrate, an APD, a TIA, a RC (resistor-capacitor) filter module, a thermistor, a first filter capacitor and a second filter capacitor, wherein the TEC as a first layer is attached on the upper surface of the coaxial TO56 base, the AIN ceramic circuit substrate as a second layer is attached on the upper surface of the TEC, and the ADP, the TIA, the thermistor, the RC filter module, the first filter capacitor and the second filter capacitor are arranged on the surface of the AIN ceramic circuit substrate to form a third layer. The coaxial photoelectric module has the advantages of small size, good temperature characteristic, stable photoelectric properties and high reliability.

Description

technical field [0001] The invention relates to the design technology of high-speed optical signal receiving components in the field of optical fiber communication, in particular to an avalanche multiplier photodiode (APD)-transimpedance preamplifier (TIA) coaxial photoelectric component with temperature control function and a manufacturing method. Background technique [0002] Due to market demand and the continuous progress of optoelectronics and integrated circuit technology, the downlink transmission rate of optical access network E-PON and G-PON has reached 10Gb / s. In the optical access network, to receive the optical signal transmitted from the optical fiber, it is necessary to use a miniaturized and sealed optoelectronic component composed of a photodiode and a low-noise preamplifier at the optical receiving front end. [0003] Photodiodes are distinguished by structure and performance indicators, and there are mainly two forms: one is a photodiode with a PIN type (PI...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/00H01L21/50
CPCH01L2224/48091H01L2924/19107H01L2924/3011H01L2224/49111H01L2224/48137H01L2924/30111H01L2924/00014H01L2924/00
Inventor 丁国庆王志刚李锟胡长飞
Owner WUHAN HUAGONG GENUINE OPTICS TECH
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