Distributed feedback semiconductor laser and electric absorption modulator integrated light source and mfg. method

A distributed feedback, semiconductor technology, used in semiconductor lasers, lasers, laser parts, etc., can solve the problems of inability to independently optimize lasers and modulators, difficult to achieve high-performance light source requirements, and difficult to reduce device manufacturing costs, and achieve low loss. , strong gain coupling coefficient, the effect of reducing junction capacitance

Inactive Publication Date: 2003-10-29
TSINGHUA UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

The selective area epitaxy technology needs to control the thickness, gap width and width of the dielectric mask; the quantum well partial disorder technology will reduce the performance of the quantum well during the annealing process, and the process repeatability is poor; while the same epitaxial layer structure, using the grating Redshift the wavelength of DFB laser, because the lasing wavelength deviates from the gain spectrum peak of the active layer, its threshold

Method used

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  • Distributed feedback semiconductor laser and electric absorption modulator integrated light source and mfg. method
  • Distributed feedback semiconductor laser and electric absorption modulator integrated light source and mfg. method
  • Distributed feedback semiconductor laser and electric absorption modulator integrated light source and mfg. method

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Embodiment 1

[0035] This embodiment introduces an InGaAsP DFB laser / EA modulator integrated laser device with an operating wavelength of 1550 nm based on a selective area epitaxy structure.

[0036] The epitaxial material structure of the device is as attached figure 1 As shown, among them: (1) N electrode, (2) substrate, (3) buffer layer, (5) lower waveguide layer, (6) multi-quantum well active layer, (7) grating, (8) upper waveguide layer, (9) leveling grating material, (10) etch stop layer, (11) upper confinement layer, (12) ohmic contact layer, (13) p-electrode, (14) DFB laser part, (15) electrode isolation part , (16) EA modulator part. The modulator and laser share a highly doped n-type InP substrate material. First grow an n-type InP buffer layer (thickness 160nm, doping concentration about 1×10 18 cm -3 ), non-doped lattice matching InGaAsP lower waveguide layer (thickness 80nm, light fluorescence wavelength 1150nm). Then make a layer of 200nm thick Si0 2 Mask, the gap width ...

Embodiment 2

[0040] This embodiment introduces an InGaAlAs DFB laser / EA modulator integrated laser device with an operating wavelength of 1310 nm based on the same epitaxial layer structure.

[0041] The laser and modulator share a highly doped n-type InP substrate material. In the first epitaxy process first in n + -On the InP substrate, the n-InP buffer layer (thickness 500nm, doping concentration about 1×10) was sequentially grown by MOCVD 18 cm -3 ), non-doped lattice-matched InGaAsP lower waveguide layer (thickness 100nm, optical fluorescence wavelength 1050nm), non-doped strained InGaAlAs multi-quantum well active layer (10 periods, 1% compressive strain well, thickness 6nm; lattice-matched barrier , thickness 10nm, photofluorescence wavelength 1270nm), non-doped lattice matching InGaAsP upper waveguide layer (thickness 150nm, photofluorescence wavelength 1050nm). Then, for the laser part, 5 quantum wells are etched away by holographic exposure and dry etching to form a gain grati...

Embodiment 3

[0045] This embodiment introduces a GaAs / GaAlAs DFB laser / EA modulator integrated laser device with an operating wavelength of 850 nm based on quantum well partial disorder technology.

[0046] The epitaxial material structure of the device is as attached figure 2 As shown, among them: (1) N electrode, (2) substrate, (3) buffer layer, (4) lower confinement layer, (5) lower waveguide layer, (6) multi-quantum well active layer, (7) Grating, (8) upper waveguide layer, (11) upper confinement layer, (12) ohmic contact layer, (13) p-electrode, (14) DFB laser part, (15) electrode isolation part, (16) EA modulator part . The laser and modulator share a highly doped n-type GaAs substrate material. In the first epitaxial process, the n-GaAs buffer layer (thickness 500nm, doping concentration about 1×10 18 cm -3 ), undoped lattice-matched Ga 1-x al x As lower confinement layer (thickness 1000nm, x=0.45, doping concentration about 5×10 17 cm -3 ), undoped lattice-matched Ga 1-x ...

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Abstract

A distributed feedback (DFB) laser-electric absorption modulator (EAM) integrated light source is characterized by that the DFB laser has the raster structure formed by periodically arranged active layer material and said integrated light source has the active layer material with epitaxial quantum trap structure. Its preparing process is also disclosed. Its advantage is optimized performance of both units.

Description

technical field [0001] The integrated light source and manufacturing method of distributed feedback semiconductor laser and electroabsorption modulator belong to the technical field of optoelectronic devices, especially the technical field of monolithic photonic integrated devices. Background technique [0002] Modern society is in the information age, and efficient and convenient information exchange has greatly promoted the development and progress of society. The appearance of Internet (Internet) makes communication develop from traditional voice service to comprehensive data service. After the explosive expansion in the 1990s, the Internet is entering a period of stable development. The speed and capacity of the Internet keep growing steadily, and gradually integrate the traditional telephone network and cable TV network to form a unified information network. As the physical basis of information transmission, optical fiber communication system is developing towards hig...

Claims

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Application Information

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IPC IPC(8): H01S5/00H01S5/026
Inventor 罗毅王健孙长征熊兵
Owner TSINGHUA UNIV
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