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Apparatus and method for low power low latency high capacity storage class memory

a storage class and low latency technology, applied in the field of data storage, can solve the problems of compromising the capacity of the storage class memory, exposing non-volatile memory technologies to early failure, and compromising the storage class memory concept. the effect of solid-state storag

Inactive Publication Date: 2014-04-10
WESTERN DIGITAL TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a method and storage system for improved solid-state storage usage without causing any negative effects. This solution overcomes the shortcomings of previous arrangements.

Problems solved by technology

Moreover, since data in memory is frequently accessed, non-volatile memory technologies might be exposed to early failure given the relatively low endurance of current non-volatile solid state technology.
Unfortunately, the Storage Class Memory concept has found only partial realization.
In this latter case, capacity of the SCM was compromised or the SCM cost became relatively unattractive.

Method used

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  • Apparatus and method for low power low latency high capacity storage class memory
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  • Apparatus and method for low power low latency high capacity storage class memory

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Embodiment Construction

[0007]Aspects of the present invention are to provide a method and a storage system for implementing enhanced solid-state storage usage. Other important aspects of the present invention are to provide such method and storage system substantially without negative effect and to overcome some of the disadvantages of prior art arrangements.

[0008]In brief, a method and a storage system are provided for implementing enhanced solid-state storage class memory (eSCM) including a direct attached dual in line memory (DIMM) card containing dynamic random access memory (DRAM), and at least one non-volatile memory, for example, Phase Change memory (PCM), Resistive RAM (ReRAM), Spin-Transfer-Torque RAM (STT-RAM), and NAND flash chips. An eSCM processor controls selectively moving data among the DRAM, and the at least one non-volatile memory based upon a data set size.

BRIEF DESCRIPTION OF THE DRAWINGS

[0009]The present invention together with the above and other objects and advantages may best be un...

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PUM

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Abstract

A method and a storage system are provided for implementing enhanced solid-state storage class memory (eSCM) including a direct attached dual in line memory (DIMM) card containing dynamic random access memory (DRAM), and at least one non-volatile memory, for example, Phase Change memory (PCM), Resistive RAM (ReRAM), Spin-Transfer-Torque RAM (STT-RAM), and NAND flash chips. An eSCM processor controls selectively allocating data among the DRAM, and the at least one non-volatile memory primarily based upon a data set size.

Description

FIELD OF THE INVENTION[0001]The present invention relates generally to the data storage field, and more particularly, relates to a method and a storage system for implementing storage class memory with large size, low power and low latency in data accesses. This storage class memory can be attached directly to the memory bus or to peripheral interfaces in computer systems such as peripheral component interconnect (PCI), or PCIe or common storage interfaces such as Serial (ATA) or SATA, or Serial Attached SCSI (SAS).DESCRIPTION OF THE RELATED ART[0002]Non-volatile solid state memory technologies, such as NAND Flash, have been used for data storage in computer systems. Solid State Drives (SSDs) used in computer systems can take both the form factors and interfaces of hard disk drives (HDDs). SSDs nevertheless provide for faster data access solution than HDDs. SSDs have recently evolved to provide alternative form factor and access through a PCIe interface. In the interest of providing...

Claims

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Application Information

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IPC IPC(8): G06F12/00
CPCG06F12/0223G06F12/0238G06F12/06G06F2212/2022G06F2212/2024G06F2212/205G11C11/005Y02D10/00G06F12/0246G06F12/0638G06F13/1694G06F12/02
Inventor CHU, FRANK R.FRANCA-NETO, LUIZ M.TSAI, TIMOTHY K.WANG, QINGBO
Owner WESTERN DIGITAL TECH INC
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