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Preparation method and structure of one-film and multipurpose masked texturing solar cell

A solar cell and mask technology, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of large equipment investment and high equipment requirements, and achieve the effects of simple process, low cost, and high photoelectric conversion efficiency

Active Publication Date: 2012-04-04
TRINA SOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, the crystalline silicon solar cells produced by the world's major solar companies are all P-type silicon substrates. In order to further improve the efficiency of solar cells and reduce costs, SE (selective emission junction) and back passivation are widely used in the industry to prepare high-efficiency cells. , but these two technologies have high requirements for equipment and a large investment in equipment

Method used

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  • Preparation method and structure of one-film and multipurpose masked texturing solar cell
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  • Preparation method and structure of one-film and multipurpose masked texturing solar cell

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Embodiment 1

[0047] Select P-type Czochralski monocrystalline silicon chip, crystal direction (100), doping concentration 1Ωcm as example, the present invention is further described, has the following steps:

[0048] a) Both sides of the silicon wafer are polished;

[0049] b) BBr3 liquid boron diffusion source is used to prepare P-type backside field, the diffusion temperature is 930°C, the time is 50min, and the sheet resistance is 30ohm / Sq;

[0050] c) Etch the P-type emitter junction on the back and remove the BSG at the same time with the post-cleaning machine of RENA company;

[0051] d) growing a SiO2 thin film by thermal oxidation as a mask layer with a thickness of 300nm;

[0052] e) re-depositing a 90nm SiNx film on the back;

[0053] f) etching the SiO2 film on the non-emitter surface with a corrosive slurry;

[0054] g) use conventional alkali texturing solution to make texturing on the front side, and SiO2 film / SiNx film as the mask on the back;

[0055] h) The P-N junctio...

Embodiment 2

[0067] Select n-type Czochralski monocrystalline silicon chip, crystal direction (100), doping concentration 1Ωcm as example, the present invention is further described, has the following steps:

[0068] a) Both sides of the silicon wafer are polished;

[0069] b) N-type back field was prepared by POCl3 liquid phosphorus diffusion source, the diffusion temperature was 850°C, the time was 50min, and the sheet resistance was 30ohm / Sq;

[0070] c) Etch the N-type back field on the back and remove the PSG at the same time with the post-cleaning machine of RENA company;

[0071] d) growing a SiO2 thin film mask layer with a thickness of 300nm by thermal oxidation;

[0072] e) re-depositing a 90nm SiN film on the back;

[0073] f) etching the SiO2 mask layer on the non-emitter surface with a corrosive slurry;

[0074] g) use conventional alkali texturing solution to make texturing on the front side, and use SiO2 / SiNx as the mask on the back side;

[0075] h) BBr3 liquid boron di...

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Abstract

The invention relates to the technical field of manufacturing of photovoltaic cells, in particular to a preparation method and a structure of a one-film and multipurpose masked texturing solar cell. The preparation method comprises the following steps of: taking a P-type Czochralski monocrystalline silicon as a substrate, manufacturing an SiO2 thin film on a P-type back surface field, taking the SiO2 thin film as a positive alkali solution-textured mask, diffusing a phosphorus source after the completion of texturing, and preparing P-N nodes on the front surface; forbidding to completely remove the SiO2 thin film and an SiNx thin film after the diffusion of the phosphorus source, and retaining the SiO2 thin film of 10-150 nm as a passivation film on the back surface; or taking an N-type Czochralski monocrystalline silicon as a substrate, manufacturing a SiO2 thin film on an N-type back surface field, taking the SiO2 thin film as a positive alkali solution-textured and boron source-diffused mask; and forbidding to completely remove after the diffusion of a phosphorus source, and retaining the SiO2 thin film of 10-150 nm as a passivation film on the back surface. The invention has the beneficial effects that compared with the prior process method, the process is simple, the control is easy, the cost is low, and the photoelectric conversion efficiency is high.

Description

technical field [0001] The invention relates to the technical field of photovoltaic cell manufacturing, in particular to a preparation method and structure of a multi-purpose masked textured solar cell. Background technique [0002] At present, the crystalline silicon solar cells produced by the world's major solar companies are all P-type silicon substrates. In order to further improve the efficiency of solar cells and reduce costs, SE (selective emission junction) and back passivation are widely used in the industry to prepare high-efficiency cells. , but these two technologies require high equipment and require a large investment in equipment. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a P-type silicon solar cell process method with simple process, low cost and suitable for large-scale production. [0004] The solution adopted by the present invention to solve the technical problem is: a method for prepa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216H01L31/04
CPCY02E10/50Y02P70/50
Inventor 张学玲
Owner TRINA SOLAR CO LTD
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