Pure metal oxide semiconductor (MOS) structure voltage reference source with high power supply rejection ratio

A high power supply rejection ratio, MOS structure technology, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problems of increasing quiescent current, high process cost, reducing start-up circuits, etc., to improve voltage suppression performance, reduce The difficulty of circuit design and the effect of high power supply rejection ratio

A high power supply rejection ratio, MOS structure technology, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problems of increasing quiescent current, high process cost, reducing start-up circuits, etc., to improve voltage suppression performance, reduce The difficulty of circuit design and the effect of high power supply rejection ratio

CN103529897AActive Publication Date: 2014-01-22SOUTHEAST UNIV
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  • Pure metal oxide semiconductor (MOS) structure voltage reference source with high power supply rejection ratio
  • Pure metal oxide semiconductor (MOS) structure voltage reference source with high power supply rejection ratio
  • Pure metal oxide semiconductor (MOS) structure voltage reference source with high power supply rejection ratio

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Embodiment Construction

[0021] The principles and features of the present invention will be described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0022] Such as figure 1, is a traditional bandgap reference circuit using transistors and resistors as the core. It is a transistor base-emitter voltage VBE with a negative temperature coefficient and a thermal voltage VT with a positive temperature coefficient. The voltage is weighted and added to obtain an output voltage with zero temperature coefficient, but in the CMOS process, the triode has problems such as too large area and high power consumption, and the model of the parasitic triode is not accurate enough.

[0023] Such as figure 2 , is a voltage reference circuit using MOS tubes and resistors as the core, wherein MOS tubes M14 and M15 work in the sub-threshold region. This circuit uses the negative...

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Abstract

A pure metal oxide semiconductor (MOS) structure voltage reference source with high power supply rejection ratio (PSRR) comprises a starting circuit, an IPTAT generation circuit, a VPTAT generation circuit, a VGS generation circuit and a PSRR reinforcing feedback circuit. The starting circuit is connected with the IPTAT generation circuit, the output of the IPTAT generation circuit is connected with the VPTAT generation circuit and the VGS generation circuit, the output of the VPTAT generation circuit and the output of the VGS generation circuit are overlapped to form Vref reference voltage output, and the output reference voltage is fed back to the IPTAT generation circuit through the PSRR reinforcing feedback circuit to generate a circuit to form a closed feedback loop.

Description

technical field [0001] The invention belongs to the technical field of analog integrated voltage reference source circuits, and in particular relates to a pure MOS structure voltage reference source with high power supply rejection ratio. Background technique [0002] In the design of analog circuits, digital-analog hybrid integrated circuits or system chips, it is often necessary to use a reference voltage source, which converts the power supply voltage into a reference voltage that is approximately independent of the power supply voltage and temperature, and is used to provide stable bias for other parts of the circuit. setting and reference voltage. Therefore, the low temperature drift coefficient and high voltage rejection ratio are the key performance indicators of the voltage reference source. In the digital-analog hybrid integrated circuit, the noise of the digital part is easily coupled into the power supply, so the requirements for the circuit power supply suppress...

Claims

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Application Information

Patent Timeline
22 Jan 2014
Publication
CN103529897A
IPC
G05F1/567
Inventors
孙伟锋; 杨棒