Pure metal oxide semiconductor (MOS) structure voltage reference source with high power supply rejection ratio

Abstract

A pure metal oxide semiconductor (MOS) structure voltage reference source with high power supply rejection ratio (PSRR) comprises a starting circuit, an IPTAT generation circuit, a VPTAT generation circuit, a VGS generation circuit and a PSRR reinforcing feedback circuit. The starting circuit is connected with the IPTAT generation circuit, the output of the IPTAT generation circuit is connected with the VPTAT generation circuit and the VGS generation circuit, the output of the VPTAT generation circuit and the output of the VGS generation circuit are overlapped to form Vref reference voltage output, and the output reference voltage is fed back to the IPTAT generation circuit through the PSRR reinforcing feedback circuit to generate a circuit to form a closed feedback loop.

Description

technical field [0001] The invention belongs to the technical field of analog integrated voltage reference source circuits, and in particular relates to a pure MOS structure voltage reference source with high power supply rejection ratio. Background technique [0002] In the design of analog circuits, digital-analog hybrid integrated circuits or system chips, it is often necessary to use a reference voltage source, which converts the power supply voltage into a reference voltage that is approximately independent of the power supply voltage and temperature, and is used to provide stable bias for other parts of the circuit. setting and reference voltage. Therefore, the low temperature drift coefficient and high voltage rejection ratio are the key performance indicators of the voltage reference source. In the digital-analog hybrid integrated circuit, the noise of the digital part is easily coupled into the power supply, so the requirements for the circuit power supply suppress...

AI Technical Summary

Problems solved by technology

The second type needs to implement enhancement mode and depletion mode MOS devices on the same silicon chip. The chip manufacturing process requires an additional mask, which also has special requirements for the process, the process cost is high, and there is a large deviation with the process angle; the third type Using the gate-source voltage difference of MOS devices to realize the reference, there is no special requirement for the process, but a stable peripheral bias circuit is required and the process angle deviation is still large

Although the second type requires corresponding process support, the use of depletion-type MOS devices to generate voltage references will reduce the corresponding start-up circuits, while the circuit is simple, and can achieve a lower power supply voltage power supply reference

The third type has no special requirements on the process, but its temperature coefficient is also affected by nonlinear factors such as carrier mobility.

But complex operational amplifiers increase the difficulty of design, while adding a large amount of quiescent current

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