Titanium dioxide photocatalysis air-cleaning film and its preparation method

A technology of photocatalytic thin film and titanium dioxide, which is applied in the direction of catalyst activation/preparation, chemical instruments and methods, physical/chemical process catalysts, etc. It can solve problems such as technical limitations, affecting air purification effects, and affecting photocatalytic reactions.

A technology of photocatalytic thin film and titanium dioxide, which is applied in the direction of catalyst activation/preparation, chemical instruments and methods, physical/chemical process catalysts, etc. It can solve problems such as technical limitations, affecting air purification effects, and affecting photocatalytic reactions.

CN1354042AInactive Publication Date: 2002-06-19TSINGHUA UNIV +1

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  • Titanium dioxide photocatalysis air-cleaning film and its preparation method
  • Titanium dioxide photocatalysis air-cleaning film and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Using glass as the carrier, put it into the vacuum coating equipment after cleaning, using the medium frequency AC magnetron sputtering method, the frequency range of the medium frequency AC arc suppression power supply is 15KHz, and the background vacuum pressure is 3.0×10 -3 Pa, the working gas is argon, with a purity of 99.99%; the working gas is 0.5Pa; the reaction gas is oxygen, with a purity of 99.99%, and the partial pressure of oxygen is 0.1Pa; the temperature of the carrier during film deposition is 150°C; the magnetron sputtering time 40 minutes.

[0022] Under the above conditions, the obtained titanium dioxide film is composed of anatase phase, rutile phase and a small amount of amorphous composition, wherein the relative proportion of anatase phase to anatase and rutile is about 88%, and the rutile phase accounts for anatase and rutile. The relative proportion of rutile is 12%, the thickness of the film is about 45nm, and the grain size is 30-40nm. The ult...

Embodiment 2

[0025] Using glass ceramics as the carrier, put it into the vacuum coating equipment after cleaning, using the medium frequency AC magnetron sputtering method, the frequency range of the medium frequency AC arc suppression power supply is 20KHz, and the background vacuum pressure is 3.0×10 -3 Pa, the working gas is argon, with a purity of 99.99%; the working gas is 1.2Pa; the reaction gas is oxygen, with a purity of 99.99%, and the partial pressure of oxygen is 0.12Pa; the temperature of the carrier during film deposition is 300°C; the magnetron sputtering time is 40 minute.

[0026] Under the above conditions, the obtained titanium dioxide film is composed of mixed phases of anatase phase and rutile phase, wherein the relative proportion of anatase phase to anatase and rutile is about 92%, and rutile phase accounts for anatase and rutile. The relative ratio is 8%, the thickness of the film is about 500nm, and the grain size is 30-40nm. The ultraviolet light absorption rate o...

Embodiment 3

[0029]Use metal aluminum as the carrier, put it into the vacuum coating equipment after cleaning, use the medium frequency AC magnetron sputtering method, the frequency range of the medium frequency AC arc suppression power supply is 40KHz, and the background vacuum pressure is 4.0×10 -3 Pa, the working gas is argon, the purity is 99.99%; the working gas is 2.0Pa; the reaction gas is oxygen, the purity is 99.99%, the partial pressure Pa of oxygen; the temperature of the carrier during film deposition is 400 ° C; the magnetron sputtering time is 40 minutes .

[0030] Under the above conditions, the obtained titanium dioxide film is composed of mixed phases of anatase and rutile, wherein the anatase phase accounts for about 95% of the relative proportion of anatase and rutile, and the rutile phase accounts for anatase and rutile. The relative proportion is 5%, the thickness of the film is about 55nm, and the grain size is ~40nm. The ultraviolet light absorption rate of the film...

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Abstract

The present invention relates to a titanium dioxide photocatalysis air-cleaning film and its preparation method. It is characterized by that it utilizes the megnetron sputtering to form titanium dioxide photocatalysis air-cleaning film on the carriers of glass, metal and ceramics. It uses the direct synthesis of pure metal titanium target material and oxygen gas and utilzies are controlling power supply to prevent pure metal target material from poisoning, in which the crystal grains formed by titanium dioxide film can be grown along the vertical direction or horizontal direction of carrier. The grain size is 10-100 nano, and the thickness of the film is 20-100 nano. Said titanium dioxide film is formed from single anatase phase or single rutile phase or their mixed phase, in which the anatase content is 50%-98% and rutile phase content is 2%-50%. Said film can effectively degrade harmful gases of formaldehyde and phenol, etc.

Description

technical field [0001] The invention relates to a titanium dioxide photocatalytic air purification film and a preparation method thereof, belonging to the technical field of semiconductor photocatalysis. Background technique [0002] When modern people are enjoying the benefits brought by today's science and technology and the development of material civilization, they are inevitably affected by some side effects. "Air pollution" is one of the most serious problems that people face. [0003] With the acceleration of urbanization, a large amount of domestic waste and vehicle exhaust emissions have caused the overall deterioration of urban air quality from indoor to outdoor, especially the deterioration of indoor air is usually 5 to 10 times that of outdoor air. The development of industrial technology has brought a large number of petroleum products, chemical products, electrical products, and daily necessities and decorative materials that can produce volatile organic compo...

Claims

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Application Information

Patent Timeline
19 Jun 2002
Publication
CN1354042A
IPC
B01J21/06; B01J37/02; B01J37/34; C23C14/08; C23C14/34
CPC
C23C14/0036; C23C14/083
Inventors
庄大明; 方晓东